C. Ang

发表

Dynamic NBTI of PMOS transistors and its impact on device lifetime

D. Kwong, Ming-Fu Li, M. Li, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling

D. Kwong, M. Li, G. Chen, 2002, IEEE Electron Device Letters.

Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

Y. Yeo, G. Samudra, Chunxiang Zhu, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Fast DNBTI components in p-MOSFET with SiON dielectric

D. Kwong, Y. Yeo, G. Samudra, 2005, IEEE Electron Device Letters.

Negative Bias Temperature Instability on Plasma-Nitrided Silicon Dioxide Film

C. Ang, B. Cho, Tupei Chen, 2002 .

Influence of Nitrogen Proximity from the Si/SiO2 Interface on Negative Bias Temperature Instability

T. P. Chen, L. Chan, C. Ang, 2002 .

Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition

T. P. Chen, L. Chan, C. Ang, 2003 .

Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations

T. P. Chen, L. Chan, C. Ang, 2003 .

Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability

W. Y. Teo, T. P. Chen, L. Chan, 2003 .

A new waveform-dependent lifetime model for dynamic NBTI in PMOS transistor

L. Chan, C. Ang, Shyue Seng Tin, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

D. Kwong, Y. Yeo, G. Samudra, 2005, IEEE Electron Device Letters.

Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

T. P. Chen, C. Ang, B. Cho, 2002 .

Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

C. Ang, B. Cho, Z. Cheng, 2000 .

Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si

Dim-Lee Kwong, Byung Jin Cho, Chew Hoe Ang, 2002 .

Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides

C. Ang, B. Cho, Z. Cheng, 2000 .

Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction

C. Boothroyd, C. Ang, K. Loh, 2005 .

Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si

W. D. Wang, D. Kwong, D. Chi, 2002 .

Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement

C. Ang, Tupei Chen, M. Tse, 2002 .

Gate oxide thickness dependence of edge charge trapping in NMOS transistors caused by charge injection under constant-current stress

C. Ang, Tupei Chen, S. Tan, 2003 .

Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET

Tu Pei Chen, Lap Chan, Shyue Seng Tan, 2005, Microelectron. Reliab..