S. Liang

Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond

Seung H. Kang, M. Bangar, J. Ahn, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance

M. Bangar, J. Ahn, C. Park, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Low-Contact-Resistivity Nickel Germanide Contacts on n+Ge with Phosphorus/Antimony Co-Doping and Schottky Barrier Height Lowering

Y. Nishi, S. Gupta, W. P. Maszara, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

TMRC 2016│Schedule at a glance

Kang, Xue, C. S. Bhatia, 2016 .

Scalability of Magnetic Tunnel Junctions Patterned by a Novel Plasma Ribbon Beam Etching Process on 300 mm Wafers

Mahendra Pakala, Christopher Lazik, L. Xue, 2015, IEEE Transactions on Magnetics.

Temperature Dependence of Critical Device Parameters in 1 Gb Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM

H. Chen, C. Park, A. Kontos, 2017, IEEE Transactions on Magnetics.