B. Kim

Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

S.-H. Hwang, M. Kunz, B.-J. Kim, 2012, Microelectron. Reliab..

Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

B. Kim, Yong-Ryun Jo, S.-H. Myeong, 2018, RSC advances.

g temperature on the sol – gel synthesis of VO 2 nanowires with in situ characterization of their metal – insulator transition †

B. Kim, Yong-Ryun Jo, S.-H. Myeong, 2018 .

Direct correlation of structural and electrical properties of electron-doped individual VO2 nanowires on devised TEM grids

B. Kim, Yong-Ryun Jo, M.W. Kim, 2016, Nanotechnology.

Freestanding graphene writing on a silicon carbide wafer

B. Kim, D. Sung, J. Son, 2020 .

Physical properties of Ni/sub 2/MnGe alloy films with different degrees of atomic orders

B. Kim, Y. Kudryavtsev, K.W. Kim, 2005, IEEE Transactions on Magnetics.

GaN-Based Light-Emitting Diode With Three-Dimensional Silver Reflectors

B. Kim, Jihyun Kim, J. Bang, 2009, IEEE Photonics Technology Letters.

Effect of GaNAs strain compensating layer over InAs quantum dots grown by MOMBE

S. Ganapathy, I. Suemune, K. Uesugi, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).