S. Mao

发表

The redox of hydroxyl-assisted metallic filament induced resistive switching memory based on a biomaterial-constructed sustainable and environment-friendly device

Hongyan Wang, L. Zheng, B. Sun, 2018, Materials Today Chemistry.

Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions

Zhou Yu, Bai Sun, Hongyan Wang, 2019, Applied Materials Today.

Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device

Bai Sun, Yudong Xia, S. Mao, 2018, Ceramics International.

Analog-to-digital and self-rectifying resistive switching behavior based on flower-like δ-MnO2

G. Zhou, Yong Zhao, S. Mao, 2022, Applied Surface Science.

pH-Modulated memristive behavior based on an edible garlic-constructed bio-electronic device

Bai Sun, Hongyan Wang, Yong Zhao, 2019, New Journal of Chemistry.

Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state

Guangdong Zhou, Bai Sun, Hongyan Wang, 2019, APL Materials.

Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

S. Mao, Shouhui Zhu, Feng Yang, 2018, Chemical Physics Letters.

α-MnO2 nanorods-based memristors with nonvolatile resistive switching behavior

Yong Zhao, S. Mao, Jiang Wang, 2022, Ceramics International.

A resistance ratio persistently increasing and repeatable nonvolatile memory in AZO/CZTSe/FTO resistive switching devices

Yudong Xia, Yong Zhao, S. Mao, 2018 .

Effects of tungsten on vacancy aggregation behavior and its induction for interstitial and vacancy migration in tantalum–tungsten alloys: A first-principles study

S. Mao, Hongjuan Zhu, Shulong Wen, 2023, Annals of Nuclear Energy.

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

Yudong Xia, S. Mao, Xuejiao Zhang, 2018 .