C. Cho

20nm DRAM: A new beginning of another revolution

J. M. Park, G. Jin, Jun Seo, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Highly manufacturable 90 nm DRAM technology

S.H. Hong, C.H. Cho, D.J. Lee, 2002, Digest. International Electron Devices Meeting,.

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

Gwan-Hyeob Koh, Dae-Won Ha, Kinam Kim, 1999 .

Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design Rule

Kinam Kim, Ju-Yong Lee, Min-Sang Kim, 2002 .

Free energy modeling of block-copolymer within pillar confinements on DSA lithography

Hyun-woo Kim, Joon-Soo Park, E. S. Jung, 2017, Advanced Lithography.

Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 ㎚ DRAM

J. W. Lee, Kinam Kim, Sungsam Lee, 2003 .

A 6F/sup 2/ DRAM technology in 60nm era for gigabit densities

Kinam Kim, G. Jin, S. Song, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

Yoon-Soo Chun, Soo-Ho Shin, Y. Hwang, 2000 .