A. Fox

0.3 dB minimum noise figure at 2.5 GHz of 0.13 µm Si/Si0.58Ge0.42 n-MODFETs

Paul Crozat, R. Adde, M. Zeuner, 2001 .

High-Performance, Low-Cost SiGe:C BiCMOS Technology

R. Scholz, A. Fox, U. Haak, 2003 .

High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs

A. Fox, C. Sandow, S. Mantl, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Vertical silicon MOSFETs based on selective epitaxial growth

A. Fox, M. Marso, P. Kordos, 2000, ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).

Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs

A. Fox, M. Marso, P. Kordos, 2004, The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004..

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

A. Fox, M. Marso, P. Kordos, 2006, IEEE Transactions on Electron Devices.

RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$

A. Fox, N. Grandjean, D. Gregusova, 2010, IEEE Electron Device Letters.

Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs

A. Fox, M. Marso, P. Kordos, 2002, The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.

RF small-signal and power characterization of AlGaN/GaN HEMTs

A. Fox, M. Marso, P. Kordos, 2002, The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.

AlGaN/GaN HEMTs on (111) silicon substrates

A. Alam, M. Heuken, A. Fox, 2002, IEEE Electron Device Letters.

Low-temperature-grown MBE GaAs for terahertz photomixers

R. Sobolewski, A. Fox, M. Marso, 2001, 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567).