H. Asahi

发表

Long-wavelength waveguide multiple-quantum-well (MQW) optical modulator with 30:1 on/off ratio

K. Wakita, Y. Yoshikuni, Y. Kawamura, 1986 .

Effects of growth temperature on nitrogen incorporation into InGaPN epilayer and its optical properties

K. Kim, H. Asahi, S. Hasegawa, 2014 .

Ultra-low turn-on field from ultra-long ZnO nanowire arrays emitters

H. Asahi, S. Hasegawa, X. Fang, 2010 .

Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structures

Y. Yoshikuni, Yuichi Kawamura, Hajime Asahi, 1986 .

8-Element Linear Array Monolithic p-i-n MODFET Photoreceivers Using Molecular Beam Epitaxial Regrowth

N. Henmi, T. Ido, H. Sano, 1993 .

New semiconductors TlInGaP and their gas source MBE growth

K. Oe, H. Asahi, K. Iwata, 1997 .

Isotopic Heft on the B1 l Silent Mode in Ultra-Narrow Gallium Nitride Nanowires.

M. M. de Lima, H. Asahi, W. Ibarra-Hernández, 2018, Nano letters.

Gas source molecular beam epitaxy growth of GaP/AlP short period superlattices

H. Asahi, T. Watanabe, S. Gonda, 1994 .

Polymorphism in the ferromagnetic GaCrN-diluted magnetic semiconductor : Luminescence and structural investigations

M. Kim, H. Asahi, M. Hashimoto, 2005 .

Strongly localized exciton luminescence in Cr-doped GaN

H. Asahi, M. Hashimoto, S. Hasegawa, 2005 .

Metalorganic molecular beam epitaxy growth of GaAs on patterned GaAs substrates

X. F. Liu, S. Hiyamizu, H. Asahi, 1994 .

Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

Hajime Asahi, Yasushi Nanishi, N. Teraguchi, 2002 .

III-Nitride Dilute Magnetic Semiconductors

H. Asahi, Yi-Kai Zhou, Yikai Zhou, 2019, Molecular Beam Epitaxy.

Fluorescence Extended X-Ray Absorption Fine Structure Study on Local Structures of Rare-Earth-Doped InGaGdN

H. Asahi, S. Emura, S. N. Mohd Tawil, 2016 .

Growth and characterization of GaDyN/GaN double barrierstructures

H. Asahi, S. Hasegawa, S. Emura, 2013 .

Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001)

H. Asahi, M. Ishimaru, S. Hasegawa, 2013 .

Strong atomic ordering in Gd-doped GaN

H. Asahi, M. Ishimaru, S. Hasegawa, 2012 .

Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices

H. Asahi, N. Mori, S. Hasegawa, 2012 .

Rare-earth doped III-nitride semiconductors for semiconductor spintronics

H. Asahi, S. Hasegawa, S. Emura, 2012 .

Growth and Characterization of GaDyN/AlGaN Multi-Quantum Well Structures

H. Asahi, S. Hasegawa, S. Emura, 2012 .

Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy

H. Asahi, S. Hasegawa, S. Emura, 2011 .

Structural and magnetic properties of GaGdN/GaN superlattice structures

H. Asahi, Sung-woo Choi, S. Hasegawa, 2010 .

Annealing Effect in GaDyN on Optical and Magnetic Properties

H. Asahi, S. Hasegawa, S. Emura, 2009 .

Magnetic Properties of GaGdN Studied by SX-MCD and XAFS

H. Asahi, Tetsuya Nakamura, S. Hasegawa, 2009 .

Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures

H. Asahi, Sung-woo Choi, S. Hasegawa, 2008 .

High Gd Concentration GaGdN Grown at Low Temperatures

H. Asahi, Sung-woo Choi, S. Hasegawa, 2007 .

Emission spectra from AlN and GaN doped with rare earth elements

N. Teraguchi, M. Kim, A. Suzuki, 2006 .

Optical properties of GaN-based magnetic semiconductors

M. Kim, H. Asahi, Y. Kawakami, 2004 .

s Double terojunction Device sistor and Injection Laser fo ctronic

J. Temmyo, A. Kozen, H. Asahi, 1987 .

A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuits

J. Temmyo, A. Kozen, H. Asahi, 1987, IEEE Electron Device Letters.

MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb

H. Asahi, Y. Okuno, T. Kaneko, 1991 .

Selective area growth of GaN nanorods on patterned W/SiO2/Si substrates by RF-MBE

H. Asahi, S. Hasegawa, J. Seo, 2009 .

Self‐Organized Quantum Wires and Dots in III – V semiconductors

H. Asahi, 1997 .

Selective area epitaxy of GaSb and AlGaSb by metalorganic molecular beam epitaxy

X. F. Liu, H. Asahi, Y. Okuno, 1994 .

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

H. Asahi, K. Iwata, S. Gonda, 1997 .

Structure Analysis of Composition Modulation in Epitaxially-Grown III–V Semiconductor Alloys

H. Asahi, M. Ishimaru, S. Hasegawa, 2013 .

Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

H. Asahi, M. Ishimaru, S. Hasegawa, 2009 .

MOMBE growth characteristics of antimonide compounds

H. Asahi, Y. Okuno, T. Kaneko, 1992 .

Magnetic and optical properties of Mn-including InAs dots grown by metalorganic molecular beam epitaxy

H. Asahi, Yi-Kai Zhou, S. Gonda, 2000 .

Formation of quantum well wire-like structures by MBE growth of AlGaAs/GaAs superlattices on GaAs (110) surfaces

H. Asahi, K. Maehashi, S. Hasegawa, 1991 .

MBE growth of AlGaAs/GaAs superlattices on GaAs (110) substrates

H. Asahi, K. Maehashi, S. Hasegawa, 1990 .

Optical studies on GaN-based spintronics materials

H. Asahi, M. Hashimoto, H. Harima, 2004 .

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy

K. Wakita, Y. Kawamura, H. Asahi, 1984 .

Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy

H. Asahi, Hidenao Tanaka, S. Nojima, 1986 .

Improvements of electrical and optical properties of InAlAs grown by molecular beam epitaxy

Y. Kawamura, H. Asahi, K. Nakashima, 1985 .

Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III–V Compound Semiconductor Nanostructures

H. Asahi, J. Noh, Seong‐Jin Kim, 1996 .

Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor

H. Asahi, S. Hasegawa, Yi-Kai Zhou, 2006 .

Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation

H. Asahi, S. Emura, M. Komuro, 1989 .

Study of Ga ion implantation damage and annealing effect in Sn‐doped InP using Raman scattering

H. Asahi, S. Emura, H. Tanoue, 1989 .

Raman scattering study on the effects of Ga ion implantation and subsequent thermal annealing for AlSb grown by molecular‐beam epitaxy

H. Asahi, M. Seta, S. Kim, 1993 .

MBE growth and characterization of TlInGaAsN double quantum well structures

K. Kim, H. Asahi, M. Ishimaru, 2009 .

Polarisation-dependent gain-current relationship in InGaAs/InGaAlAs/InAlAs SCH-MQW laser diodes

K. Wakita, Y. Kawamura, H. Asahi, 1985 .

Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

H. Asahi, S. Emura, T. Kaneko, 1991 .

The n-type and p-type doping of GaSb and AlGaSb grown by metalorganic molecular beam epitaxy

X. F. Liu, Kyo Inoue, H. Asahi, 1995 .

Etching effect on metal‐organic molecular‐beam epitaxy growth of GaSb using triethylgallium and trisdimethylaminoantimony

X. F. Liu, Kyo Inoue, H. Asahi, 1994 .

MOMBE growth of AlSb and AlGaSb using trimethylamine alane

X. F. Liu, H. Asahi, Y. Okuno, 1993 .

MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine

H. Asahi, Y. Okuno, T. Kaneko, 1991 .

MOMBE growth of AlGaSb

H. Asahi, Y. Okuno, T. Kaneko, 1991 .

BAND OFFSET OF AIGalnAsSb ALLOY SEMICONDUCTOR

H. Asahi, T. Kaneko, S. Gonda, 1991 .

MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb

H. Asahi, Y. Okuno, T. Kaneko, 1989 .

Molecular Beam Epitaxy with Gaseous Sources

H. Asahi, 2015 .

Metalorganic molecular beam epitaxy growth characteristics of GaAs using triethylgallium and trisdimethylaminoarsenic

X. F. Liu, Kyo Inoue, H. Asahi, 1995 .

Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony

X. F. Liu, Kyo Inoue, H. Asahi, 1994 .

Process simulation for the MOMBE (metalorganic molecular beam epitaxy) growth

H. Asahi, Y. Okuno, T. Kaneko, 1993 .

Theoretical consideration of the growth kinetics for GaAs and GaSb

H. Asahi, T. Kaneko, S. Gonda, 1992 .

Observations on RHEED intensity oscillations during the growth of GaSb and InAs by MOMBE

H. Asahi, Y. Okuno, T. Kang, 1990 .

Surface diffusion lengths of Ga molecules during GaAs mombe (Metalorganic molecular beam epitaxy) growth

H. Asahi, Y. Okuno, T. Kang, 1990 .

Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine

H. Nagai, H. Asahi, Y. Kawaguchi, 1985 .

MBE-grown InGaAs/InP BH lasers with LPE burying layers

H. Nagai, Y. Kawamura, H. Asahi, 1982 .

Improved properties of InxGa1−x As layers grown by molecular‐beam epitaxy on InP substrates

H. Okamoto, Y. Kawamura, H. Asahi, 1981 .

Electrical and optical properties of Be‐doped InP grown by molecular beam epitaxy

H. Nagai, Y. Kawamura, H. Asahi, 1983 .

Silicon doping in InP grown by molecular beam epitaxy

Y. Kawamura, H. Asahi, 1983 .

Optical properties of atomically controlled InGaAs/InP quantum well structures

H. Asahi, S. Gonda, K. Asami, 1994 .

Atomically controlled InGaAs/InP superlattices grown by gas source MEE (migration enhanced epitaxy)

H. Asahi, S. Emura, S. Gonda, 1993 .

Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4

X. F. Liu, S. Hiyamizu, H. Asahi, 1995 .

Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloysystem

K. Kim, H. Asahi, Woo-Byoung Kim, 2013 .

Spectroscopic study of self-organized quantum dot like structures in Ga-In-P superlattices on (311) GaAs

H. Asahi, B. Arora, J. Noh, 1999 .

Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs. II: Distribution among samples

H. Asahi, T. Ikoma, S. Nojima, 1987 .

Surface morphology and crystalline structure of high-stable polycrystalline transparent conductive zinc oxide films

H. Asahi, Kenji Yamamoto, S. Hasegawa, 2011 .

0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBE

H. Nagai, Y. Kawamura, H. Asahi, 1983 .

Optically pumped laser action at 77 K of InGaP/InGaAlP double heterostructures grown by MBE

H. Nagai, Y. Kawamura, H. Asahi, 1982 .

Temperature stability of the refractive index and the direct bandedge in TlInGaAs quaternary alloys

H. Asahi, T. Mukai, S. Hasegawa, 2004 .

Very low resistance ohmic contacts to n-GaN

J. Rhee, H. Asahi, S. Noh, 1998 .

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

Kenji Hosogi, Hajime Sasaki, Naohito Yoshida, 2009, Microelectron. Reliab..

Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber

H. Asahi, S. Gonda, K. Yamamoto, 1997 .

The etching effect of trisdimethylaminoantimony on (001) planar substrates

H. Asahi, S. Gonda, K. Yamamoto, 1995 .

Promising characteristics of GaN layers grown on amorphous silica substrates by gas-source MBE

H. Asahi, S. Chichibu, H. Tampo, 1998 .

Metalorganic molecular beam epitaxy growth and etching of GaSb on flat and high-index surfaces using trisdimethylaminoantimony

H. Asahi, Toyoharu Hayashi, S. Gonda, 1996 .

Zn‐diffusion‐induced intermixing of InGaAs/InP multiple quantum well structures

Y. Kawamura, H. Asahi, Y. Kawaguchi, 1988 .

An interfacial property of the InGaAs/Semi‐insulating InP structure prepared by metal organic vapor phase epitaxy

H. Nagai, H. Asahi, S. Nojima, 1985 .

Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature

K. Wakita, Y. Kawamura, H. Asahi, 1985 .

Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBE

K. Wakita, H. Asahi, A. Kohzen, 1985 .

Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH Lasers

H. Okamoto, Y. Kawamura, H. Asahi, 1981 .

Control of GaN nanorod diameter by changing growth temperature during molecular-beam epitaxy

H. Asahi, H. Tambo, 2013 .

Size effect in the electrical properties of thin epitaxial bismuth films

H. Asahi, A. Kinbara, 1980 .

Structure and electrical properties of thin bismuth films

H. Asahi, A. Kawazu, G. Tominaga, 1976 .

Structural and optical characterization of self-formed GaP/InP quantum dots

S. Tagawa, H. Asahi, S. Matsuda, 2000 .

Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE

H. Asahi, K. Iwata, S. Gonda, 1998 .

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

H. Asahi, K. Iwata, S. Gonda, 1998 .

Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

H. Asahi, J. Noh, K. Iwata, 1997 .

Gas Source Molecular Beam Epitaxial Growth of GaN 1-xPx (x \Leq 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell

H. Asahi, K. Iwata, Shun-ichi Gonda Shun-ichi Gonda, 1996 .

Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

H. Asahi, S. Emura, T. Fujikawa, 2015 .

Photoluminescence from exciton-polarons in GaGdN/AlGaN multiquantum wells

H. Asahi, S. Hasegawa, S. Emura, 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates

H. Asahi, H. Tampo, Y. Imanishi, 2001 .

Improved properties of polycrystalline GaN grown on silica glass substrate

H. Asahi, H. Tampo, S. Gonda, 2000 .

Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy

K. Akimoto, H. Asahi, A. Yanase, 2003 .

Influence of Si‐doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

H. Asahi, M. Ishimaru, S. Hasegawa, 2011 .

Molecular Beam Epitaxy

H. Asahi, Y. Horikoshi, 2019 .

Electromagnetic properties of thin epitaxial Bi films in magnetic fields up to 85 kG

H. Asahi, A. Kinbara, S. Baba, 1977 .

Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III–V semiconductors by molecular orbital calculation

H. Asahi, Y. Okuno, S. Gonda, 1994 .

Molecular‐beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties

H. Okamoto, Y. Kawamura, H. Asahi, 1981 .

RAMAN SCATTERING STUDY OF THERMAL INTERDIFFUSION IN INGAAS/INP SUPERLATTICE STRUCTURES

H. Asahi, S. Emura, S. Gonda, 1991 .

Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing

Y. Kawamura, H. Asahi, Y. Kawaguchi, 1987 .

Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation

H. Asahi, H. Tanoue, H. Sumida, 1989 .

InGaAsP/InP quantum wires fabricated by focused Ga ion beam implantation

H. Asahi, C. Hamaguchi, Y. Okuno, 1992 .

Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate

H. Asahi, J. Noh, Shun-ichi Gonda Shun-ichi Gonda, 1996 .

Raman scattering study of the recovery process in Ga ion implanted GaSb

Hajime Asahi, S. G. Kim, M. Seta, 1993 .

Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region

H. Asahi, M. Kanamura, H. Harima, 2001 .

Raman scattering in InGaAlP layers grown by molecular‐beam epitaxy

Hidenao Tanaka, Yuichi Kawamura, Hajime Asahi, 1989 .

Gadolinium-doped III-nitride diluted magnetic semiconductors for spintronics applications

H. Asahi, S. Hasegawa, S. Emura, 2016 .

Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy

H. Asahi, M. Ishimaru, S. Hasegawa, 2011 .

Photoconductance measurement on TlInGaP grown by gas source MBE

K. Oe, H. Asahi, S. Gonda, 1998 .

Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices

H. Asahi, S. Gonda, K. Asami, 1998 .

New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth

H. Asahi, Kazuhiko Yamamoto, K. Iwata, 1996 .

An approach to temperature‐insensitive band gap – The InGaGdN case

H. Asahi, S. Emura, D. Krishnamurthy, 2012 .

Optical properties of quantum dots self-formed in GaP/InP short period superlattices grown on GaAs ( N11) substrates

H. Asahi, S. Gonda, K. Asami, 1998 .

High density of self-organized quantum dots formed in (GaP) n (InP) m short period superlattices grown on GaAs ( N11)

H. Asahi, J. Noh, S. Gonda, 1997 .

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

H. Asahi, K. Iwata, S. Yu, 1996 .

Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy

H. Asahi, S. Tripathy, K. Iwata, 1999 .

TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientation

H. Asahi, S. Hasegawa, A. Fujiwara, 2007 .

X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing-induced structural changes

K. Kim, H. Asahi, Woo-Byoung Kim, 2010 .

Improvement in luminescence properties of TlInGaAsN/TlInP multi-layers grown by gas source molecular beam epitaxy

H. Asahi, M. Ishimaru, S. Hasegawa, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Studies on TlInGaAsN double quantum well structures

H. Asahi, M. Ishimaru, S. Hasegawa, 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

Quinary TlGaInNAs DQW Structures: Effect of Growth Temperature and Growth Rate on Tl Incorporation

H. Asahi, S. Hasegawa, A. Fujiwara, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers

H. Asahi, T. Mukai, S. Hasegawa, 2005 .

Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates

H. Asahi, K. Asami, Kenta Konishi, 2002 .

TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy

H. Asahi, K. Konishi, Yi-Kai Zhou, 2001 .

Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

H. Asahi, K. Konishi, S. Gonda, 2000 .

Optical properties of atomic layer grown InAs/AlSb quantum well structures by gas source migration enhanced epitaxy

H. Asahi, Heiji Watanabe, M. Seta, 1994 .

Deep Electron Trapping Centers in Si-Doped InAlAs Grown by Molecular Beam Epitaxy

Y. Kawamura, H. Asahi, S. Nojima, 1987 .

Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium

H. Asahi, T. Kaneko, Shun-ichi Gonda Shun-ichi Gonda, 1993 .

Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy

Y. Teraoka, H. Asahi, Kenji Yamamoto, 2011 .

MOMBE growth of InGaAs using trisdimethylaminoarsenic

Hajime Asahi, H. Asahi, K. Hidaka, 1997 .

Growth rate enhancement of III–V antimonides on high-index substrates in metalorganic molecular beam epitaxy

H. Asahi, S. Gonda, K. Yamamoto, 1997 .

Growth of InN quantum dots by droplet epitaxy and their characterization

H. Asahi, S. Hasegawa, S. Emura, 2012 .

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

K. Wakita, Y. Kawamura, H. Asahi, 1987 .

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

H. Asahi, H. Tampo, Y. Imanishi, 2001 .

Metalorganic–vapor‐phase‐epitaxial growth of Mg‐doped Ga1−xAlxAs layers and their properties

A. Kozen, H. Asahi, S. Nojima, 1986 .

Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application

H. Asahi, S. Hasegawa, J. Seo, 2013 .

Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy

H. Asahi, S. Hasegawa, T. Shimoi, 2013 .

Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy

H. Asahi, K. Iwata, S. Gonda, 1998 .

Selective growth of InP on localized areas of silicon (100) substrate by molecular beam epitaxy

H. Asahi, S. Hasegawa, J. Seo, 2008 .

Optical properties of InAs/AlSb superlattices grown by gas source molecular beam epitaxy

H. Asahi, M. Seta, M. Inoue, 1994 .

High‐temperature observation of heavy‐hole and light‐hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy

H. Asahi, Y. Kawaguchi, 1987 .

Gas source MEE growth of InGaAs/InP superlattices

H. Asahi, S. Emura, N. Takeyasu, 1992 .

Gas source MEE (migration enhanced epitaxy) growth of InP

H. Asahi, T. Kaneko, N. Takeyasu, 1991 .

Observation of Quantum-Dot-Like Properties in the Phase-Separated GaN-Rich GaNP

H. Asahi, H. Tampo, K. Iwata, 1999 .

Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy

H. Asahi, S. Gonda, R. K. Soni, 2000 .

Gas source molecular beam epitaxy/migration enhanced epitaxy growth of InAs/AlSb superlattices

H. Asahi, M. Seta, S. Kim, 1993 .

Quantum Size Effect in Thin Bismuth Films

H. Asahi, A. Kawazu, T. Humoto, 1974 .

Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)n(InP)n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy

H. Asahi, K. Asami, Shun-ichi Gonda Shun-ichi Gonda, 1996 .

Refractive index of InGaAs/InAlAs multiquantum‐well layers grown by molecular‐beam epitaxy

H. Asahi, S. Nojima, H. Asahi, 1988 .

Refractive indices of In0.49Ga0.51−xAlxP lattice matched to GaAs

Y. Kawamura, H. Asahi, Hidenao Tanaka, 1986 .

Spectroscopic study of Ga-In-P based self-organized lateral superlattices

H. Asahi, B. Arora, J. Noh, 1999 .

Resonant tunneling in coupled quantum dots

David A. Ritchie, G. A. C. Jones, A. C. Churchill, 1992 .

Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas‐source migration enhanced epitaxy

H. Asahi, S. Kim, T. Kaneko, 1992 .

Room-temperature operation of MBE-grown InGaP/InGaAlP MQW visible laser diodes

Hidenao Tanaka, Y. Kawamura, Y. Kawamura, 1986 .

Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength region

Y. Kawamura, H. Asahi, 1984 .

Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure

H. Asahi, S. Hasegawa, S. Emura, 2012 .

Polycrystalline GaN for light emitter and field electron emitter applications

Shigehiko Hasegawa, Hajime Asahi, S. Nishida, 2005 .

Polycrystalline GaN: Analysis of the Defects

H. Asahi, P. Ruterana, G. Nouet, 2003 .

Long wavelength waveguide multiple quantum well optical modulators

K. Wakita, Y. Kawamura, H. Asahi, 1987 .

Photoluminescence lifetime of GaP/AlP superlattices grown by gas‐source molecular‐beam epitaxy

H. Asahi, S. Kim, S. Gonda, 1994 .

Molecular beam epitaxial growth of InGaAlP on (100) GaAs

Haruo Nagai, Yuichi Kawamura, Hajime Asahi, 1982 .

Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides

Shigehiko Hasegawa, Hajime Asahi, S. Nishida, 2005 .

Hillock defects in InGaAs/InP multi-layers grown by MBE

H. Nagai, H. Asahi, K. Nawata, 1983 .

Magnetic and optical properties of GaMnN grown by ammonia-source molecular-beam epitaxy

H. Asahi, M. Kanamura, H. Tampo, 2003 .

Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

H. Asahi, S. Nojima, M. Oishi, 1985 .

High temperature (>400 K) ferromagnetism in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

Masahito Kanamura, Hajime Asahi, H. Asahi, 2002 .

Low temperature molecular beam epitaxy growth of cubic GaCrN

Y. Yamauchi, Shigehiko Hasegawa, Hajime Asahi, 2008 .

Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum‐well structures

Y. Kawamura, H. Asahi, S. Nojima, 1988 .

Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures

H. Nagai, Y. Kawamura, H. Asahi, 1983 .

Barrier height control for electron field emission by growing an ultra-thin AlN layer on GaN/Mo

H. Asahi, S. Nishida, S. Hasegawa, 2004 .

InAs dots including Mn atoms fabricated by MOMBE

H. Asahi, Yi-Kai Zhou, S. Gonda, 2000 .

Formation of InAs quantum dots by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and bisdimethylaminoarsenicchloride

H. Asahi, S. Gonda, K. Yamamoto, 1998 .

Etching of GaSb with trisdimethylaminoantimony and triisopropylantimony in a metalorganic molecular beam epitaxy chamber

H. Asahi, S. Gonda, K. Yamamoto, 1997 .

Metalorganic molecular beam epitaxy/etching of III V semiconductors

H. Asahi, S. Gonda, K. Yamamoto, 1998 .

Addendum to “Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony” [J. Crystal Growth 145 (1994) 668]

H. Asahi, S. Gonda, K. Yamamoto, 1997 .

Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgallium

X. F. Liu, S. Hiyamizu, H. Asahi, 1995 .

Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy

H. Asahi, T. Kaneko, S. Gonda, 1993 .

Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy

H. Asahi, H. Tampo, S. Gonda, 2001 .

Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (0 0 1) by MBE

H. Asahi, S. Hasegawa, J. Seo, 2009 .

Growth and photoluminescence properties of TlInGaAsN/TlGaAsN triple quantum wells

K. Kim, H. Asahi, S. Hasegawa, 2010 .

Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi

H. Asahi, 2017 .

High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells

K. Wakita, Y. Yoshikuni, Y. Kawamura, 1985 .

MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength

H. Asahi, S. Hasegawa, A. Fujiwara, 2007 .

Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics

H. Asahi, S. Hasegawa, A. Fujiwara, 2006 .

Reduced temperature dependence of refractive-index in TlInGaAs quaternary alloys grown on InP substrates

H. Asahi, S. Hasegawa, S. Emura, 2003 .

Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications

K. Oe, H. Asahi, S. Gonda, 1999 .

TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy

H. Asahi, Kazuhiko Yamamoto, K. Asami, 1997 .

Gas source molecular beam epitaxy growth of TlInP for new infrared optical devices

H. Asahi, K. Iwata, S. Gonda, 1997 .

Long-wavelength optical modulation in multiple quantum wells

K. Wakita, Y. Yoshikuni, Y. Kawamura, 1986 .

High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells

Y. Yoshikuni, Yuichi Kawamura, Hajime Asahi, 1985 .

Electroabsorption on room-temperature excitons in InGaAs/InGaAlAs multiple quantum-well structures

Y. Yoshikuni, Yuichi Kawamura, Hajime Asahi, 1985 .

Structural properties of AlCrN, GaCrN and InCrN

H. Asahi, S. Hasegawa, S. Emura, 2009 .

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

N. Teraguchi, M. Kim, H. Asahi, 2005 .

Spontaneous formation of ultra-short period lateral composition modulation n TIInGaAsN/TIInP structures

H. Asahi, M. Ishimaru, S. Hasegawa, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

MBE Growth of High-Quality InP Using Triethylindium as an Indium Source

H. Nagai, H. Asahi, Y. Kawaguchi, 1984 .

Optically bistable operation in InGaAs/lnAIAs MOW laser diodes using resonant tunnelling effect

Kunishige Oe, Yuichi Kawamura, Hajime Asahi, 1987 .

Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy

H. Asahi, Y. Okuno, Xuefeng Liu, 1993 .

Local crystal structure and local electronic structure around Cr in low-temperature-grown GaCrN layers

H. Asahi, M. Hashimoto, S. Hasegawa, 2006 .

Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy

M. Kim, H. Asahi, S. Hasegawa, 2004 .

Structural and Optical Characterization of GaN/AlGaN Single Quantum Disk Nanorods

H. Asahi, S. Hasegawa, S. Emura, 2013 .

Molecular Beam Epitaxial Growth of Undoped Low-Resistivity InxGa1-xP on GaAs at High Substrate Temperatures (500–580°C)

H. Nagai, Y. Kawamura, H. Asahi, 1981 .

Tunneling characteristics of thin epitaxial Bi‐film–SiO2–Pb junctions

H. Asahi, A. Kinbara, 1976 .

Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers

H. Nagai, Y. Kawamura, H. Asahi, 1983 .

Tunnel magnetoresistance in GaCrN∕AlN∕GaCrN ferromagnetic semiconductor tunnel junctions

H. Asahi, S. Hasegawa, S. Emura, 2006 .

Magnetoresistance in GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures

H. Asahi, S. Hasegawa, S. Emura, 2005, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004..

Magnetic, optical and transport properties of GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures

M. Kim, H. Asahi, S. Hasegawa, 2005 .

Migration-enhanced epitaxy (MEE) growth of five-layer asymmetric coupled quantum well (FACQW) and its cross-sectional STM observation

K. Tada, H. Asahi, Tatsuya Suzuki, 2004 .

Suppression of vacancy aggregation by silicon-doping in low-temperature-grown Ga1−xCrxN

H. Asahi, S. Hasegawa, A. Yabuuchi, 2013 .

Characterization of InGaGdN layers prepared by molecular beam epitaxy

H. Asahi, S. Hasegawa, S. Emura, 2010 .

Synthesis and characterization of Gd-doped InGaN thin films and superlattice structure

H. Asahi, M. Ishimaru, S. Hasegawa, 2010, 2010 3rd International Nanoelectronics Conference (INEC).

Broken symmetry of cage surrounding magnetic dopant Cr ion in cubic GaN

H. Asahi, S. Hasegawa, S. Emura, 2009 .

Formation of aligned CrN nanoclusters in Cr-delta-doped GaN

H. Asahi, S. Hasegawa, S. Emura, 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

H. Asahi, Y. Narukawa, Y. Kawakami, 1999 .

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs2 thin films on InP substrates

H. Asahi, S. Emura, N. Uchitomi, 2014 .

Observation of photoluminescence emission in ferromagnetic semiconductor GaCrN

H. Asahi, M. Hashimoto, S. Hasegawa, 2004 .

Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation

Y. Akasaka, H. Asahi, K. Gamo, 2006 .

Large magneto-optical effect in low-temperature-grown GaCrN and GaCrN:Si

P. Fan, H. Asahi, S. Hasegawa, 2012 .

Electronic structure of Ga 1 − x Cr x N and Si-doping effects studied by photoemission and x-ray absorption spectroscopy

H. Asahi, M. Takizawa, S. Hasegawa, 2008, 0805.3299.