W. Dobbelaere

AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates

H. Morkoç, M. Unlu, D. Huang, 1988 .

Plasma process-induced charging during PECVD overlay nitride deposition

W. Dobbelaere, L. Jastrzebski, P. Moens, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).

Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy

M. V. Hove, R. Mertens, G. Borghs, 1990 .

Long wavelength InAs/sub 0.2/Sb/sub 0.8/ detectors grown on patterned Si substrates by molecular beam epitaxy

R. Mertens, G. Borghs, W. Dobbelaere, 1989, International Technical Digest on Electron Devices Meeting.

InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy

Robert Mertens, Gustaaf Borghs, P. Heremans, 1992 .

Optical characterization of Si‐doped InAs1−xSbx grown on GaAs and GaAs‐coated Si by molecular‐beam epitaxy

R. Mertens, G. Borghs, W. Dobbelaere, 1991 .

GaInAs/GaAs multiple quantum well reflection modulators

H. Morkoç, D. Huang, W. Dobbelaere, 1988 .

GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device

Hadis Morkoç, M. S. Unlu, S. Kalem, 1988 .

InAsSb light emitting diodes and their applications to infra-red gas sensors

R. Mertens, G. Borghs, W. Dobbelaere, 1993 .