D. Langer

发表

M. Chmielowski, D. Langer, 1989, IEEE Photonics Technology Letters.

Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T

W. J. Choyke, D. Langer, L. Rowland, 1998 .

uv photoemission measurements of the upper d levels in the IIB-VIA compounds

D. Langer, R. Hengehold, C. J. Vesely, 1972 .

Improvements to the stability of electric field sensors

J. R. Boston, D. Langer, J. Falk, 1995, LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings.

Microstructural characterization of AlGaAs‐GaAs modulation‐doped field‐effect transistor ohmic contacts formed by transient annealing

R. J. Graham, Renu Sharma, D. Langer, 1988 .

Pressure coefficient of the ZnO band-to-band transition

D. Langer, R. Knell, 1966 .

Thin‐film induced stress in GaAs ridge‐waveguide structures integrated with sputter‐deposited ZnO films

D. M. Bruce, Hong Koo Kim, D. Langer, 1994 .

Transmission‐electron microscope studies of Au‐Ni‐Ge based ohmic contacts to GaAs‐AlGaAs MODFET device

A. Petford-Long, D. Langer, A. Ezis, 1987 .

Phonon Coupling in Edge Emission and Photoconductivity of CdSe, CdS, and Cd(Se x S 1-x )

D. Langer, Y. S. Park, R. N. Euwema, 1966 .

Stimulated Emission and Excited States of the I6 Donor Electron in ZnO

D. Langer, T. Goto, 1971 .

X-ray photoemission studies of silicon and germanium

D. Langer, C. J. Vesely, D. L. Kingston, 1973 .

Photoelectric Properties of Mg2Si, Mg2Ge, and Mg2Sn II. UV Excitation

M. Cardona, D. Langer, N. J. Shevchik, 1973 .

Valence band density of states of amorphous and trigonal selenium determined by X-ray and U.V. photoemission

M. Cardona, D. Langer, J. Tejeda, 1973 .

Valence bands of amorphous and crystalline GeTe determined by X‐ray and UV photoemission

M. Cardona, D. Langer, N. J. Shevchik, 1973 .

Valence Band ofMg2Sn Determined by Auger and Photoemission Spectroscopy

M. Cardona, D. Langer, N. J. Shevchik, 1973 .

Photoelectron spectroscopy of solids

D. Langer, 1973 .

Electron Emission from Core and Valence States of Some Semiconductors

D. Langer, 1969 .

Modification of surface characteristics in GaAs with dry processing

D. Look, R. Becker, D. Langer, 1985, IEEE Transactions on Electron Devices.

Electronic Core Levels of Zinc Chalcogenides

D. Langer, C. J. Vesely, 1970 .

Linear Compressibilities of II‐VI Compound Single Crystals

D. Langer, R. Montalvo, 1970 .

Interband faraday rotation of II–VI compounds☆

D. Langer, M. Balkanski, É. Amzallag, 1965 .

Photoluminescence of highly Er-doped silica films and Er-doped gallium arsenide

Hong Koo Kim, X. Fang, D. Langer, 1994 .

The effect of low pressure plasma on Si–SiO2 structures and GaAs substrates

C. Y. Chen, D. Langer, Y. Chung, 1983 .

Backgating characteristics of MODFET structures

D. Langer, A. Ezis, 1985, IEEE Electron Device Letters.

Zero-Phonon Lines and Phonon Coupling in ZnS:Mn

D. Langer, S. Ibuki, 1965 .

Computing the eigenmodes of lossy field-induced optical waveguides

D. Langer, R. Coalson, D. K. Pant, 1994 .

Energy Terms of ZnS:Tm and Ho

D. Langer, S. Ibuki, 1964 .

Rare Earth Doped Semiconductors, Symposium Held in San Francisco, California on April 13-15, 1993. Materials Research Society Symposium Proceedings, Volume 301

D. Langer, G. Pomrenke, Paul B Klien, 1994 .

Zero-Phonon Lines and Phonon Coupling of ZnSe: Mn and CdS: Mn

D. Langer, H. J. Richter, 1966 .

Photoemission and density of valence states of the II–VI compounds. I. ZnTe, CdSe, CdTe, HgSe, and HgTe

M. Cardona, D. Langer, N. J. Shevchik, 1973 .

Photoemission and density of valence states of the II-VI compounds: II. ZnSe, CdS, and HgS

M. Cardona, D. Langer, N. J. Shevchik, 1973 .

Electronic Core Levels of theIIB−VIACompounds

D. Langer, C. J. Vesely, 1971 .

Erratum: Index of Refraction of Isopentane and Mesitylene as a Function of Pressure

D. W. Langer, D. Langer, Ramiro A. Montalvo, 1968 .

Effects of Excitation Intensity on Photoluminescence of Pure CdTe

D. Langer, Q. Kim, 1984 .

Excimer and dye laser annealing of silicon‐nitride‐capped, Si‐implanted GaAs

D. Langer, A. Compaan, A. Bhat, 1987 .

Luminescence of ZnSe near the band edge under strong laser light excitation

D. Langer, K. Era, 1970 .

Spin Exchange in Excitons, the Quasicubic Model and Deformation Potentials in II-VI Compounds

Takao Koda, D. W. Langer, D. Langer, 1970 .

Splitting of Exciton Lines in Wurtzite-Type II-VI Crystals by Uniaxial Stress

D. Langer, T. Koda, 1968 .

Surface states at the GaAs-germanium nitride interface

D. Langer, J. Woollam, H. Singh, 1983 .

Defect studies in multilayer epitaxial GaAs by transient capacitance

D. Langer, J. Farmer, E. T. Rodine, 1979 .

Structure and lateral diffusion of ohmic contacts in AlGaAs/GaAs high electron mobility transistors and GaAs devices

D. Langer, A. Ezis, A. Rai, 1987 .

Determination of concentrations of donors and acceptors in GaAs by an optical method

D. Langer, S. Nam, D. L. Kingston, 1977 .

Photoelectric Properties of the Lead Chalcogenides

M. Cardona, D. Langer, N. J. Shevchik, 1973 .

Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material

D. Langer, A. Ezis, A. Rai, 1987 .

Oscillatory Photoconductivity of CdS

D. Langer, Y. Park, 1964 .

Temperature and Pressure Dependence of the Index of Refraction of CdS

D. Langer, 1966 .

Interband Faraday Rotation in CdS-CdSe Mixed Crystals†

D. Langer, M. Balkanski, É. Amzallag, 1965 .

Induced Absorption in the Presence of High Electronic Excitation

D. Langer, T. Goto, 1971 .

Stimulated Emission Spectra of CdS Platelets under Various Excitation Levels

D. Langer, K. Era, 1971 .

Radiative and nonradiative transitions in GaAs:Er

X. Fang, D. Langer, Yabo Li, 1993 .

Waveguide beamsplitters integrated with an erbium-doped thin-film optical amplifier

Hong Koo Kim, Boon Kwee Lee, Cheng-Chung Li, 1997, Photonics West.

New method for the determination of impurity levels with respect to the bands of the host crystal(ZnS:Mn)

D. Langer, J. Helmer, N. Weichert, 1970 .

Chemical reactions of oxide layers on GaAs

R. L. Johnson, D. Langer, H. Hartnagel, 1980 .

M. Cardona, D. Langer, N. J. Shevchik, 1973 .

Preparation of cross-sectional TEM samples with observable thin sections at desired regions of non-uniform surfaced semiconducting devices

D. Langer, P. Pronko, A. Ezis, 1987 .

THE DEPENDENCE OF AlGaAs/GaAs MODFET ISOLATION ON MATERIAL AND DEVICE STRUCTURE

C. Tu, D. Langer, A. Ezis, 1987 .

Intensity-reversal in the donor bound exciton luminescence of GaAs

D. C. Reynolds, G. L. McCoy, D. Langer, 1983 .

Multiple twisted dataline techniques for multigigabit DRAMs

Dong-Sun Min, D. W. Langer, D. Langer, 1999, IEEE J. Solid State Circuits.

STRONG BLUE EMISSION IN ZnS:Tm

D. Langer, S. Ibuki, 1963 .

Determination of chemical shifts of core electron binding energies for some zinc compounds and the applicability of electron spectroscopy to environmental samples

C. R. Cothern, D. Langer, C. J. Vesely, 1974 .

Wide-angle low-loss waveguide branching for integrated optics

D. Langer, R. Coalson, D. Min, 1997 .