V. Djara

发表

$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications

P. Hurley, L. Wilde, L. Oberbeck, 2009, IEEE Electron Device Letters.

Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 °C

Brian Corbett, Frank H. Peters, Vladimir Djara, 2012 .

Three-dimensional monolithic integration of III–V and Si(Ge) FETs for hybrid CMOS and beyond

Lukas Czornomaz, Karthik Balakrishnan, Thomas Morf, 2017 .

First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

P. Hashemi, E. O'Connor, V. Djara, 2017, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Effect of the interface morphology on the fill factor of plastic solar cells

J. Bernède, V. Djara, 2005 .

High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

P. Hurley, S. Monaghan, K. Cherkaoui, 2015 .

Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

D. Caimi, L. Czornomaz, J. Fompeyrine, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms

S. Cristoloveanu, V. Djara, V. Deshpande, 2017 .

Volume and interface conduction in InGaAs junctionless transistors

S. Cristoloveanu, V. Djara, V. Deshpande, 2016, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs

V. I. Glotov, P. Hurley, Y. Gomeniuk, 2019, ECS Journal of Solid State Science and Technology.

Junctionless InGaAs MOSFETs with InAlAs barrier isolation and channel thinning by digital wet etching

P. Hurley, K. Cherkaoui, E. O'Connor, 2013, 71st Device Research Conference.

Study of interface and oxide defects in high-k/In0.53Ga0.47As n-MOSFETs

P. Hurley, S. Monaghan, K. Cherkaoui, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

V. Djara, D. Caimi, J. Fompeyrine, 2016 .

(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology

Lukas Czornomaz, Eamon O'Connor, Vladimir Djara, 2015 .

The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications

P. Hurley, L. Oberbeck, S. Monaghan, 2012 .

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

P. Hurley, R. Wallace, S. Monaghan, 2011 .

Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists

Anushka S. Gangnaik, V. Djara, Y. Georgiev, 2014 .

Atomically Flat Low-Resistive Germanide Contacts Formed by Laser Thermal Anneal

C. Daunt, V. Djara, P. Carolan, 2013, IEEE Transactions on Electron Devices.

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

P. Hurley, K. Cherkaoui, V. Djara, 2015 .

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.

Nikolay Petkov, Vladimir Djara, Tarek Lutz, 2012, Nanoscale.

Impact of the energy difference in LUMO and HOMO of the bulk heterojunctions components on the efficiency of organic solar cells

V. Djara, H. Derouiche, 2007 .

Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

V. Djara, D. Caimi, J. Fompeyrine, 2015 .

Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors

V. Djara, D. Caimi, J. Fompeyrine, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and

Lukas Czornomaz, Vladimir Djara, Jean Fompeyrine, 2016, IEEE Electron Device Letters.

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System

P. Hurley, P. McIntyre, R. Wallace, 2013, IEEE Transactions on Device and Materials Reliability.

Electrically active interface defects in the In0.53Ga0.47As MOS system

P. Hurley, S. Monaghan, K. Cherkaoui, 2013 .

Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

P. Hurley, S. Monaghan, K. Cherkaoui, 2012, IEEE Transactions on Electron Devices.

Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs

P. Hurley, K. Cherkaoui, E. O'Connor, 2013 .

Theoretical and experimental analysis of capacitance and mobility in InGaAs

F. M. Bufler, E. O'Connor, V. Djara, 2016, 2016 74th Annual Device Research Conference (DRC).

Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

Kang L. Wang, J. Colinge, V. Djara, 2012 .

Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs

V. Djara, 2013 .