P. Mazoyer

发表

A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories

T. Skotnicki, C. Fenouillet-Béranger, R. Ranica, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

T. Skotnicki, D. Dutartre, P. Ribot, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation

T. Skotnicki, S. Monfray, D. Dutartre, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

VLSI platform for the monolithic integration of single-crystal Si NEMS capacitive resonators with low-cost CMOS

É. Colinet, M. Laurens, P. Robert, 2012, 2012 International Electron Devices Meeting.

Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices

J. Nodin, J. Cluzel, A. Roule, 2009, 2009 IEEE International Memory Workshop.

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

A. Toffoli, O. Cueto, A. Roule, 2010, IEEE Electron Device Letters.

A High-Reliability, Low-Power Magnetic Full Adder

Yi Gang, Weisheng Zhao, P. Mazoyer, 2011, IEEE Transactions on Magnetics.

A new 40-nm SONOS structure based on backside trapping for nanoscale memories

R. Bez, T. Skotnicki, S. Monfray, 2005, IEEE transactions on nanotechnology.

Carbon-doped GeTe: A promising material for Phase-Change Memories

G. Reimbold, Sylvain Maitrejean, D. Blachier, 2011 .

An 8 Mbit DRAM design using a 1 Tbulk cell

R. Ranica, A. Villaret, P. Candelier, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005..

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

E. Souchier, P. Moreau, P. Mazoyer, 2013 .

Role of chelating agent on the oxidic state of hydrotreating catalysts

P. Mazoyer, C. Geantet, S. Loridant, 2008 .

Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides

A. Paccagnella, P. Roche, G. Gasiot, 2005, IEEE Transactions on Nuclear Science.

In Situ EXAFS Study of the Sulfidation of an Hydrotreating Catalyst Doped with a Non Chelating Organic Additive

P. Mazoyer, C. Geantet, Thanh-Son Nguyen, 2005 .

A New Embedded NVM Thin Film Cell for Low Voltage Applications

Thomas Skotnicki, R. Bouchakour, Pascal Masson, 2008 .

Independent Double Gate - potential for non-volatile memories

R. Bouchakour, T. Skotnicki, S. Puget, 2008, 2008 IEEE Silicon Nanoelectronics Workshop.

Emerging silicon-on-nothing (SON) devices technology

Stephane Monfray, T. Skotnicki, D. Chanemougame, 2004 .

Design considerations and strategies for high-reliable STT-MRAM

Jacques-Olivier Klein, Weisheng Zhao, Claude Chappert, 2011, Microelectron. Reliab..

Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit

Eric Belhaire, Weisheng Zhao, Claude Chappert, 2009, TECS.

Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory

E. Souchier, P. Mazoyer, M. Besland, 2011, 2011 3rd IEEE International Memory Workshop (IMW).

First evidence of resistive switching in polycrystalline GaV4S8 thin layers

E. Souchier, P. Moreau, P. Mazoyer, 2011 .

New non‐volatile logic based on spin‐MTJ

Eric Belhaire, Weisheng Zhao, Claude Chappert, 2008 .

N-doped GeTe as performance booster for embedded Phase-Change Memories

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 International Electron Devices Meeting.

Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM

Pascale Mazoyer, Steven Smith, Audrey Berthelot, 2005 .

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 IEEE International Memory Workshop.

Failure and reliability analysis of STT-MRAM

Jacques-Olivier Klein, Weisheng Zhao, Yue Zhang, 2012, Microelectron. Reliab..

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

Jacques-Olivier Klein, Weisheng Zhao, Claude Chappert, 2012, IEEE Transactions on Nanotechnology.

Spintronic Device Based Non-volatile Low Standby Power SRAM

Eric Belhaire, Weisheng Zhao, Claude Chappert, 2008, 2008 IEEE Computer Society Annual Symposium on VLSI.

Design of embedded MRAM macros for memory-in-logic applications

Jacques-Olivier Klein, Weisheng Zhao, Claude Chappert, 2010, GLSVLSI '10.