K. Radhakrishnan

Hong Wang, G. Ng, K. Radhakrishnan, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Stress optimization of AlN buffer in AlN/GaN/AlN Quantum well for DH-HEMT on SiC by PA-MBE

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2019, physica status solidi (a).

Optical bandgap widening and phase transformation of nitrogen doped cupric oxide

G. Dalapati, K. Radhakrishnan, Avishek Kumar, 2015 .

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

G. Ng, K. Radhakrishnan, S. Lourdudoss, 2006 .

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

G. Ng, K. Radhakrishnan, H. Wang, 2005, 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks.

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

C. H. Lee, G. Ng, K. Radhakrishnan, 2010 .

Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence

K. Radhakrishnan, S. Yoon, D. Zhang, 1995 .

In situ codoping of a CuO absorber layer with aluminum and titanium: the impact of codoping and interface engineering on the performance of a CuO-based heterojunction solar cell

G. Dalapati, K. Radhakrishnan, S. Masudy‐Panah, 2016 .

Titanium doped cupric oxide for photovoltaic application

G. Dalapati, H. Tan, K. Radhakrishnan, 2015 .

Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell

G. Dalapati, H. Tan, K. Radhakrishnan, 2014 .

Dry via hole etching of GaAs using high-density Cl2/Ar plasma

G. Ng, B. Ooi, Y. W. Chen, 2000 .

Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

K. Radhakrishnan, Q. Zhuang, H. Zheng, 2001 .

The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy

G. Ng, K. Radhakrishnan, S. Yoon, 1998 .

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2017 .

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2013 .

Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2013 .

Temperature dependence of electron ionization coefficients of InGaP measured in InGaP/GaAs/InGaP DHBT's

Hong Wang, K. Radhakrishnan, W. Neo, 2004 .

Surface and electrical studies of CuO:V2O5 thin films

K. L. Tan, B. Chowdari, K. Radhakrishnan, 1995 .

Investigation of third-order nonlinear optical properties of nanostructured Ni-doped CdS thin films under continuous wave laser illumination

K. Radhakrishnan, A. Jayarama, G. Shivakumar, 2019, Journal of Materials Science: Materials in Electronics.

Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors

K. Radhakrishnan, N. Dharmarasu, R. Lingaparthi, 2021 .

Pt/AlGaN/GaN HEMT based ammonia gas sensors

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2019, 2019 IEEE 9th International Nanoelectronics Conferences (INEC).

AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2019, Japanese Journal of Applied Physics.

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

K. Radhakrishnan, N. Dharmarasu, Tian Long Alex Seah, 2021 .

Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

G. Ng, Hong Wang, K. Radhakrishnan, 1999 .

Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, Z. Han, 1995 .

The effect of As/Ga flux ratio on Si-doped GaAs layers grown by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, D. Zhang, 1994 .

The effects of arsenic pressure on the properties of In1−x−yGaxAlyAs layers grown by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, H. Zheng, 1998 .

Photoluminescence and raman scattering characterization of silicon-doped In0.52Al0.48As grown on InP (100) substrates by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, S. Swaminathan, 1996 .

Silicon doping in In0.52Al0.48As layers grown by molecular beam epitaxy: characterization of material properties

K. Radhakrishnan, S. Yoon, Y. Miao, 1996 .

A photoluminescence and Raman scattering study of the properties of Si-doped In0.52Al0.48As grown lattice-matched to InP substrates

K. Radhakrishnan, S. Yoon, Y. Miao, 1996 .

The effects of Si doping in In0.52Al0.48As layers grown lattice matched on InP substrates

K. Radhakrishnan, S. Yoon, H. Duan, 1995 .

Photoluminescence characteristics of Si-doped In0.52Al0.48As grown on InP substrates by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, Y. Miao, 1995 .

Characterization of highly-doped GaN as a new material for plasmonic applications

K. Radhakrishnan, T. Kusserow, M. Agrawal, 2016, 2016 International Conference on Optical MEMS and Nanophotonics (OMN).

RF vs. DC breakdown: implication on pulsed radar applications [MESFETs]

A. Bensoussan, J. Cazaux, G. Ng, 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

K. Radhakrishnan, C. Soci, Zilong Wang, 2016 .

A comparative study of metamorphic InP/InGaAs heterojunction bipolar transistors (MHBTs) grown by gas and solid source molecular beam epitaxy (MBE)

Hong Wang, K. Radhakrishnan, Hong Yang, 2004 .

Temperature dependent study on the microwave noise performance of metamorphic InP/InGaAs heterojunction bipolar transistors

Hong Wang, K. Radhakrishnan, Hong Yang, 2007 .

RF performance and microwave noise of metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature

K. Radhakrishnan, H. Wang, H. Yang, 2005, International Conference on Indium Phosphide and Related Materials, 2005.

Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Hong Wang, Geok Ing Ng, K. Radhakrishnan, 2007 .

Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

G. Ng, K. Radhakrishnan, S. Yoon, 1999 .

Hot-Electron-Induced Degradation in BCB- and SiN-Passivated $\hbox{Al}_{0.25}\hbox{Ga}_{0.75}\hbox{As/In}_{0.2}\hbox{Ga}_{0.8}\hbox{As}$ PHEMTs

Hong Wang, Chee Leong Tan, K. Radhakrishnan, 2007, IEEE Transactions on Device and Materials Reliability.

Hot-Electron-Induced Degradation in BCB- and SiN-Passivated Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As PHEMTs

Hong Wang, K. Radhakrishnan, C. Tan, 2007 .

p‐CuO/n‐Si heterojunction solar cells with high open circuit voltage and photocurrent through interfacial engineering

G. Dalapati, C. C. Tan, H. Tan, 2015 .

Reactive sputter deposition and characterization of tantalum nitride thin films

Ng Geok Ing, N. G. Ing, K. Radhakrishnan, 1999 .

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

G. Ng, K. Radhakrishnan, S. Arulkumaran, 2015 .

Characterization of Ni/Ge/Au/Ni/Au contact metallization on AlGaAsInGaAs heterostructures for pseudomorphic heterojunction field effect transistor application

Soon Fatt Yoon, M. S. Tse, K. Radhakrishnan, 1995 .

A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, D. Zhang, 1994 .

Photoluminescence studies of strained InxGa1−xAs‐Al0.28Ga0.72As heterostructures grown by molecular‐beam epitaxy

K. Radhakrishnan, S. Yoon, Daohua Zhang, 1994 .

Optical characterization of strained InxGa1-xAs-Al0.28Ga0.72As heterostructures grown by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, Z. Han, 1993 .

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

G. Ng, K. Radhakrishnan, S. Arulkumaran, 2015 .

RF reactive sputtering AlN thin film at room temperature for CMOS-compatible MEMS application

K. Radhakrishnan, Jia Zhou, Leming He, 2017, 2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM).

Study of Raman Scattering on InP/InGaAs/InP HEMTs

K. Radhakrishnan, S. Yoon, H. Zheng, 1999 .

The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs

Hong Yang, Hong Wang, K. Radhakrishnan, 2004, IEEE Transactions on Electron Devices.

Theoretical and experimental investigation of temperature-dependent avalanche multiplication in InP-based heterojunction bipolar transistors with InGaAs/InP composite collector

Hong Wang, K. Radhakrishnan, Hong Yang, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Temperature-dependent breakdown behavior in InP double heterojunction bipolar transistors (DHBTs) with InGaAs/InP composite collector

Hong Wang, K. Radhakrishnan, Hong Yang, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

AlGaN/GaN HEMT grown on SiC with carbon doped GaN buffer by MOCVD

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Effects of substrate temperature and V/III flux ratio on the growth of InAIAs on InP substrates by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, S. Swaminathan, 1994 .

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

K. Radhakrishnan, J. Mateos, T. González, 2023, IEEE Transactions on Electron Devices.

Non-linear thermal resistance model for the simulation of high power GaN-based devices

G. Ng, K. Radhakrishnan, J. Mateos, 2021 .

GaN-based SSD structure for THz applications

K. Radhakrishnan, C. Gaquière, J. Mateos, 2019, 2019 IEEE Asia-Pacific Microwave Conference (APMC).

Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

K. Radhakrishnan, C. Gaquière, J. Mateos, 2019, 2019 IEEE Asia-Pacific Microwave Conference (APMC).

Study of highly selective wet gate recess process for Al0.25Ga0.75As/GaAs based pseudomorphic high electron mobility transistors

K. Radhakrishnan, R. Khatri, 2004 .

Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy

Q. H. Du, S. F. Yoon, K. Radhakrishnan, 1996, ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings.

On the substrate temperature dependence of the properties of In_0.52Al_0.48As/InP structures grown by molecular beam epitaxy

S. Yoon, K. Radhakrishnan, S. Swaminathan, 1996 .

Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressures

K. Radhakrishnan, S. Yoon, Y. Miao, 1996 .

Optical and structural characterizations for optimized growth of In0.52Al0.48As on InP substrates by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, S. Swaminathan, 1995 .

A photoluminescence and X-ray diffraction analysis of InAlAs/InP heterostructures grown by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, S. Swaminathan, 1995 .

High quality InAlAs grown on InP substrates by molecular beam epitaxy at very high arsenic overpressures

K. Radhakrishnan, S. Yoon, Y. Miao, 1995 .

Mobility enhancement in MBE-grown InxGa1−xAs/In0.52Al0.48As modulation-doped heterostructures

K. Radhakrishnan, S. Yoon, H. Duan, 1996 .

Grey scale structures formation in SU-8 with e-beam and UV

Xiaocong Yuan, K. Radhakrishnan, K. Radhakrishnan, 2003 .

GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

C. Soci, K. Radhakrishnan, Zilong Wang, 2017, IEEE Sensors Journal.

Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation

Hong Wang, K. Radhakrishnan, Yuwei Liu, 2007 .

Selective wet etching of a GaAsAlxGa1−xAs heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1−xAs/InyGa1−yAs heterojunction field effect transister fabrication

Y. C. Leong, S. Yoon, K. Radhakrishnan, 1995 .

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

K. Radhakrishnan, N. Dharmarasu, R. Lingaparthi, 2023, SSRN Electronic Journal.

Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

K. Radhakrishnan, S. Pramana, M. Agrawal, 2015 .

Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy

K. Radhakrishnan, K. Radhakrishnan, K. Yuan, 2004 .

Optimization of compositionally graded InxGa1−xP metamorphic buffer layers grown by solid source molecular beam epitaxy

K. Radhakrishnan, S. Yoon, K. Yuan, 2001 .

Chemical-mechanical Polishing of N-polar GaN for GaN HEMT on Diamond Bonding

K. Radhakrishnan, N. Dharmarasu, R. Lingaparthi, 2022, 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).

Evidence of Existence of Different Surface States in INP-Based High Electron Mobility Transistors (HEMTs)

Hong Wang, K. Radhakrishnan, C. Tan, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)

Hong Wang, K. Radhakrishnan, Hong Wang, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p-doped InGaAs/AlGaAs strained multiple quantum wells

K. Radhakrishnan, S. Yoon, V. Chin, 1994 .

Indium desorption from strained InGaAs/GaAs quantum wells grown by molecular beam epitaxy

K. L. Tan, K. Radhakrishnan, S. Yoon, 1994 .

A photoluminescence investigation of the critical thickness in InGaAs-AlGaAs pseudomorphic structures grown by molecular beam epitaxy

S. Yoon, K. Radhakrishnan, Z. Han, 1994 .

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Zhili Sun, Nethaji Dharmarasu, K. Radhakrishnan, 2010 .

Measurements of InGaP electron ionization coefficient using InGaP-GaAs-InGaP double HBTs

Hong Wang, K. Radhakrishnan, W. Neo, 2003 .

Some effects of indium composition on pseudomorphic modulation-doped heterostructures grown by molecular beam epitaxy

K. Radhakrishnan, S. Yoon, H. Duan, 1996 .

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2020 .

Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA‐MBE

K. Radhakrishnan, M. Agrawal, N. Dharmarasu, 2011 .

Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon

K. Radhakrishnan, M. Orenstein, G. Bahir, 2019, IEEE Electron Device Letters.