Xiang Yang

发表

Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM

Byung Joon Choi, Albert B. K. Chen, Xiang Yang, 2011, Advanced materials.

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

Qiyuan Wang, Zhiqiang Niu, Xiang Yang, 2006 .

Resolving voltage-time dilemma using an atomic-scale lever of subpicosecond electron-phonon interaction.

Byung Joon Choi, I. Tudosa, Albert B. K. Chen, 2014, Nano letters.

Dynamic-Load-Enabled Ultra-low Power Multiple-State RRAM Devices

Xiang Yang, I.-Wei Chen, Xiang Yang, 2012, Scientific Reports.

1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

Qiyuan Wang, Suohui Zhang, Xiang Yang, 2005 .

Resistance switching devices based on amorphous insulator-metal thin films

Xiang Yang, 2014, 1412.2083.

Cause and prevention of moisture-induced degradation of resistance random access memory nanodevices.

Byung Joon Choi, Albert B. K. Chen, Xiang Yang, 2013, ACS nano.

Giant scattering parameter and enhanced thermoelectric properties originating from synergetic scattering of electrons in semiconductors with metal nanoinclusions

Xiang Yang, X. Qin, 2010 .

A Parallel Circuit Model for Multi‐State Resistive‐Switching Random Access Memory

Byung Joon Choi, Albert B. K. Chen, Xiang Yang, 2012 .

Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test.

Xiang Yang, I. Chen, Yang Lu, 2016, Nanoscale.