J. Marchiando

发表

Boron diffusion in silicon

J. Marchiando, P. Roitman, J. Albers, 1985, IEEE Transactions on Electron Devices.

Comparison of experimental and theoretical scanning capacitance microscope signals and their impact on the accuracy of determined two-dimensional carrier profiles

J. Marchiando, J. Kopanski, B. Rennex, 2002 .

Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon

Jeremiah R. Lowney, Joseph J. Kopanski, Jay F. Marchiando, 1995 .

Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

J. Marchiando, J. Lowney, J. Kopanski, 1997 .

On Using Collocation in Three Dimensions and Solving a Model Semiconductor Problem

J. Marchiando, 1995, Journal of research of the National Institute of Standards and Technology.

Nondestructive characterization of oxygen‐ion‐implanted silicon‐ on‐insulator using multiple‐angle ellipsometry

G. A. Candela, M. Peckerar, J. Marchiando, 1988 .

Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of p–n junctions

J. Marchiando, J. Kopanski, B. Rennex, 2000 .

Electronic Structure of Trivalent Metal Dihydrides: Theory

J. Marchiando, D. Johnson, B. Harmon, 1979 .

MODELS FOR INTERPRETING SCANNING CAPACITANCE MICROSCOPE MEASUREMENTS

J. Marchiando, J. Lowney, J. Kopanski, 1998 .

Electronic structure of metal hydrides. II. Band theory of Sc H 2 and Y H 2

J. Marchiando, J. H. Weaver, B. Harmon, 1979 .

Separation by ion implantation of oxygen (SIMOX) structures: estimating thicknesses.

J. Geist, J. Marchiando, 1992, Applied optics.

Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy data

Joseph J. Kopanski, Jay F. Marchiando, J. Marchiando, 2002 .

On calculating scanning capacitance microscopy data for a dopant profile in semiconductors

J. Marchiando, J. Kopanski, 2004 .

Towards reproducible scanning capacitance microscope image interpretation

J. Marchiando, D. Simons, Q. Chau, 2004 .

Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions

Joseph J. Kopanski, H. E. Smith, D. W. Berning, 1998 .

Dopant characterization round-robin study performed on two-dimensional test structures fabricated at Texas Instruments

D. Thomson, W. Vandervorst, P. Wolf, 1998 .

Model database for determining dopant profiles from scanning capacitance microscope measurements

J. Marchiando, J. Lowney, J. Kopanski, 1998 .

On calculating the reflectance and transmittance of light for a simple thick grating structure

J. Marchiando, 1996 .

Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope

J. Marchiando, A. G. Birdwell, J. Kopanski, 2003 .

Effects of ion‐implantation damage on two‐dimensional boron diffusion in silicon

J. Marchiando, J. Albers, 1987 .

APPLICATION OF THE COLLOCATION METHOD IN THREE DIMENSIONS TO A MODEL SEMICONDUCTOR PROBLEM

Jay F. Marchiando, J. Marchiando, 1996 .

Semiconductor Measurement Technology: A Software Program for Aiding the Analysis of Ellipsometric Measurements, Simple Models

Jay F. Marchiando, J. Marchiando, 1989 .

Preparation and certification of SRM-2530, ellipsometric parameters Δ and ψ and derived thickness and refractive index of a silicon dioxide layer on silicon

Barbara J. Belzer, G. A. Candela, J. Marchiando, 1988 .