D. Jacobson

I. Ryazansky, G. Lenz, T.N. Nielsen, 1999, OFC/IOOC . Technical Digest. Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication.

Mechanisms of buried oxide formation by ion implantation

K. West, J. Poate, D. Jacobson, 1987 .

Thermodynamic and Structural Properties of Mev Ion Beam Amorphized Silicon

J. Poate, D. Jacobson, W. Sinke, 1989 .

Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBa2Cu3O7-δ

R. Howard, J. Kwo, R. Dynes, 1988 .

Annealing of defects created in silicon by MeV ion implantation

D. Jacobson, W. Brown, R. Barklie, 1993 .

Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs

S. Pearton, J. Poate, D. Jacobson, 1986 .

Ion Implantation in GaAs

S. Pearton, J. Poate, D. Jacobson, 1991 .

Growth and Characterization of GaAs-Based Heterostructures on Si By Mocvd

W. S. Hobson, S. Pearton, C. Abernathy, 1988 .

Ion beam induced damage and superlattice formation in epitaxial YBa2Cu3O7−δ thin films

R. Howard, R. Dynes, J. Poate, 1989 .

Segregation of impurities in pulsed‐laser‐melted carbon

M. Dresselhaus, T. Venkatesan, G. Dresselhaus, 1988 .

Surface Modification and Alloying

J. Poate, D. Jacobson, G. Foti, 1983, NATO Conference Series.

Iron gettering mechanisms in silicon

T. E. Haynes, P. Stolk, J. Poate, 1996 .

The mechanisms of iron gettering in silicon by boron ion-implantation

T. E. Haynes, P. Stolk, J. Poate, 1995 .

The Physics and Application of Si:Er for Light Emitting Diodes

J. Poate, D. Jacobson, J. Michel, 1993 .

Mesotaxy Layers of IrSi 3 in (111)Si Formed by MeV ION Implantation

J. Poate, D. Eaglesham, D. Jacobson, 1991 .

Surface Modification and Alloying: by Laser, Ion, and Electron Beams

J. Poate, D. Jacobson, G. Foti, 1983 .

Epitaxy and defects in laser-irradiated, single-crystal bismuth

J. Poate, D. Jacobson, S. Bernasek, 1988 .

Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation

J. Poate, D. Jacobson, D. Turnbull, 1983 .

Fabrication and performance characteristics of high-speed ion-implanted Si metal–semiconductor–metal photodetectors

N. Dutta, G. Livescu, D. Jacobson, 1997 .

Measurement of thermodynamic parameters of graphite by pulsed-laser melting and ion channeling

M. Dresselhaus, T. Venkatesan, B. Elman, 1984 .

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

T. E. Haynes, J. Poate, H. Gossmann, 1998 .

Transient Enhanced Diffusion of B in Si Implanted with Decaborane Cluster Ions

M. Sosnowski, H. Gossmann, D. Jacobson, 2002 .

Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties

J. A. Roth, A. Polman, J. Poate, 1991 .

The mechanism of iron gettering in boron‐doped silicon

T. E. Haynes, P. Stolk, J. Poate, 1996 .

Homogeneous and interfacial heat releases in amorphous silicon

J. Poate, D. Jacobson, F. Spaepen, 1989 .

Diffusion of implanted impurities in amorphous Si

D. Boerma, J. Poate, D. Jacobson, 1987 .

Diffusion and precipitation in amorphous Si

J. Poate, D. Jacobson, R. Elliman, 1985 .

Trends in Ion Implantation for Semiconductor and Optical Materials Research

J. Poate, D. Eaglesham, D. Jacobson, 1992 .

Local structure around Er in MeV Er-implanted silica

A. Polman, J. Poate, M. Marcus, 1991 .

Applications of ion implantation in III–V device technology

W. S. Hobson, F. Ren, S. Pearton, 1993 .

Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si

P. H. Citrin, Matthew A. Marcus, D. J. Eaglesham, 1992 .

Concentration and annealing effects on photoluminescence and local structure of Er-implanted silica

M. Marcus, D. Jacobson, A. Vredenberg, 1996 .

Correlation of Electrical, Structural, and Optical Properties of Erbium In Silicon

J. Poate, M. Marcus, D. Eaglesham, 1993 .

The electrical and defect properties of erbium‐implanted silicon

Jurgen Michel, Lionel C. Kimerling, Eugene A. Fitzgerald, 1991 .

Beam-solid interactions for materials synthesis and characterization

M. Iwaki, D. Jacobson, T. Heinz, 1995 .

The microstructures of laser-alloyed Ni-Ta surface layers

J. Poate, D. Jacobson, J. Rigsbee, 1985 .

Radiation‐enhanced diffusion of Au in amorphous Si

S. U. Campisano, J. Poate, F. Priolo, 1988 .

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

J. A. Roth, J. Poate, D. Jacobson, 1990 .

Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation [SOI technology]

T. E. Haynes, Y. Chabal, W. Brown, 1997, 1997 IEEE International SOI Conference Proceedings.

Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors

T. E. Ham, W. Mansfield, D. Jacobson, 1996, International Electron Devices Meeting. Technical Digest.

Nearly dispersionless microstrip for 100 GHz pulses utilizing a buried silicide groundplane

D. Kisker, H. Roskos, J. Poate, 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

Growth of single‐crystal CoSi2 on Si(111)

J. Poate, D. Jacobson, R. T. Tung, 1982 .

Point defect populations in amorphous and crystalline silicon

J. Poate, D. Eaglesham, D. Jacobson, 1990 .

X‐ray measurements of ion mixing in amorphous Si/Ge artificial multilayers

J. Poate, F. Priolo, D. Jacobson, 1990 .

A model for pulsed laser melting of graphite

M. Dresselhaus, T. Venkatesan, D. Jacobson, 1985 .

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

David Turnbull, E. P. Donovan, Frans Spaepen, 1985 .

Effect of self‐implantation on structure and oxidation behavior of single crystal β‐SiC

R. Davis, D. Jacobson, M. Libera, 1993 .

Liquid phase growth of epitaxial Ni and Co silicides

J. Poate, D. Jacobson, R. T. Tung, 1983 .

Heat of crystallization and melting point of amorphous silicon

David Turnbull, E. P. Donovan, Frans Spaepen, 1983 .

Boron pileup and clustering in silicon-on-insulator films

D. Monroe, H. Gossmann, D. Jacobson, 1999 .

Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

G. J. Galvin, Michael O. Thompson, James W. Mayer, 1984 .

Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation

Michael O. Thompson, J. W. Mayer, A. G. Cullis, 1983 .

Junction leakage studies in rapid thermal annealed diodes

T. T. Sheng, W. Fichtner, D. Jacobson, 1984 .

Comparison of pulsed laser and furnace annealing of nitrogen‐implanted silicon

D. Jacobson, R. Hull, P. Stiles, 1985 .

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

W. Augustyniak, D. Jacobson, P. Stiles, 1983 .

Ion‐beam‐induced epitaxy and interfacial segregation of Au in amorphous silicon

J. Poate, D. Jacobson, R. Elliman, 1987 .

Transport Studies in Single-Crystal Films of Cosi2 and Nisi2

J. Hensel, J. Poate, D. Jacobson, 1983 .

Exploiting Si/CoSi2/Si heterostructures grown by mesotaxy

S. A. Audet, K. Maex, J. Poate, 1991 .

Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

H. Gossmann, D. Jacobson, C. Rafferty, 1995 .

Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation

J. Poate, D. Jacobson, R. T. Tung, 1983 .

The Effect of Hydrogen on the Kinetics of Solid Phase Epitaxy in Amorphous Silicon

J. A. Roth, J. Poate, D. Jacobson, 1990 .

Effect of pressure on the solid phase epitaxial regrowth rate of Si

J. Poate, D. Jacobson, D. Turnbull, 1985 .

Twin formation and Au segregation during ion‐beam‐induced epitaxy of amorphous Si

F. Priolo, D. Jacobson, M. Thompson, 1988 .

Stratified Ion Damage and in Situ Regrowth in GaAs/AlAs Heterostructures

J. Poate, D. Eaglesham, D. Jacobson, 1990 .

Ion Implantation Damage and its Annealing Characteristics in an AlAs/GaAs Layer Structure

S. Pearton, J. Poate, D. Jacobson, 1988 .

Diffusion of dopants in B‐ and Sb‐delta‐doped Si films grown by solid‐phase epitaxy

J. Poate, H. Gossmann, D. Jacobson, 1993 .

MICROSTRUCTURE OF ERBIUM-IMPLANTED SI

E. Fitzgerald, A. Polman, J. Poate, 1991 .

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

A. S. Denholm, Martin L. Green, D. Eaglesham, 1999 .

Defect Structures on Metal Surfaces Induced by Pulsed Laser Irradiation: Characterization by Leed-Spot Profile Analysis and He+ Ion Channeling

J. Poate, D. Jacobson, S. Bernasek, 1986 .

The effect of ion implantation and solute atoms on the interdiffusion in amorphous Si/Ge multilayers

J. Poate, D. Jacobson, Byungwoo Park, 1991 .

Formation of extended defects in silicon by high energy implantation of B and P

P. Stolk, J. Poate, D. Eaglesham, 1996 .

Laser irradiation of nickel single crystals

J. Poate, D. Jacobson, J. Hirvonen, 1980 .

Segregation and Crystallization Phenomena in Germanium

G. J. Clark, J. Poate, D. Jacobson, 1982 .

DENSITY OF AMORPHOUS SI

J. Poate, D. Jacobson, W. Sinke, 1994 .

Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime

J. A. Roth, J. Poate, D. Jacobson, 1993 .

Defect states of amorphous Si probed by the diffusion and solubility of Cu

A. Polman, J. Poate, D. Jacobson, 1990 .

A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon

T. Seidel, C. Pai, D. Jacobson, 1985 .

Structural relaxation in amorphous silicon and the role of network defects

A. Polman, J. Poate, D. Jacobson, 1991 .

Epitaxial growth versus nucleation in amorphous Si doped with Cu and Ag

J. Poate, D. Eaglesham, D. Jacobson, 1993 .

Microstructure and behavior of laser-mixed Cr/Ni films on Cu alloys

G. W. Kammlott, T. Graedel, J. Poate, 1987 .

Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis

H. Gossmann, D. Jacobson, C. Magee, 2000 .

Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter

T. E. Haynes, R. Kalyanaraman, H. Gossmann, 2001 .

The role of oxygen on the stability of gettering of metals to cavities in silicon

D. Eaglesham, D. Jacobson, J. Wong-Leung, 1999 .

Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model

H. Gossmann, M. Jaraíz, D. Eaglesham, 1998 .

Differential ion damage and its annealing behavior in AlAs/GaAs heterostructures

J. Poate, D. Jacobson, A. Cullis, 1991 .

Material‐dependent amorphization and epitaxial crystallization in ion‐implanted AlAs/GaAs layer structures

N. G. Chew, S. Pearton, J. Poate, 1989 .

Changing Segregation Coefficients During Ion Beam Induced Epitaxy of Amorphous Si

J. Poate, D. Jacobson, M. Thompson, 1990 .

Interface Velocity and Noble Metal Segregation During Ion Beam Induced Epitaxial Crystallization

J. Poate, D. Jacobson, M. Thompson, 1989 .

Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs

S. Pearton, J. Poate, D. Jacobson, 1985 .

DEPTH PROFILING OF VACANCY CLUSTERS IN MEV-IMPLANTED SI USING AU LABELING

T. E. Haynes, F. Baumann, H. Gossmann, 1998 .

Extended Defects in Amorphized and Rapid-Thermally Annealed Silicon

D. Jacobson, D. Maher, R. Knoell, 1985 .

Rapid Thermal Annealing in Si

B. R. Penumalli, C. S. Pai, T. E. Seidel, 1984 .

Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

T. E. Haynes, H. Gossmann, D. Eaglesham, 1998 .

Carbon diffusion in silicon

U. Gösele, H. Gossmann, D. Jacobson, 1998 .

Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects

J. Poate, H. Gossmann, D. Eaglesham, 1994 .

Transient Thermal Processing of GaAs

D. Boerma, S. Pearton, J. Poate, 1985 .

Sputtering of Si with decaborane cluster ions

M. Sosnowski, H. Gossmann, D. Jacobson, 2002, Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.

Decaborane, an alternative approach to ultra low energy ion implantation

Aditya Agarwal, J. M. Poate, K. Bourdelle, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Decaborane as Ion Source Material for Boron Implantation

J. Poate, M. Sosnowski, D. Jacobson, 1999 .

Capture of vacancies by extrinsic dislocation loops in silicon

F. Baumann, H. Gossmann, D. Jacobson, 1998 .

Transient enhanced diffusion of Sb and B due to MeV silicon implants

T. E. Haynes, P. Stolk, J. Poate, 1997 .

The interstitial fraction of diffusivity of common dopants in Si

T. E. Haynes, P. Stolk, J. Poate, 1997 .

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

T. E. Haynes, H. Gossmann, D. Eaglesham, 1999 .

Si liquid‐amorphous transition and impurity segregation

S. U. Campisano, N. G. Chew, J. Poate, 1985 .

Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si

J. R. Liefting, J. Poate, D. Eaglesham, 1990 .

Electrical Properties of Cobalt and Copper Contamination in Processed Silicon

P. Silverman, D. Jacobson, C. Rafferty, 2001 .

Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

Lourdes Pelaz, D. J. Eaglesham, Aditya Agarwal, 1997 .

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

S. Libertino, Salvatore Coffa, D. J. Eaglesham, 1997 .

The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers

R. Opila, S. Pearton, D. Jacobson, 1987 .

Spontaneous Emission Control in Planar Structures: Er3+ IN Si/SiO2 Microcavities

P. C. Becker, George John Zydzik, N. Hunt, 1995 .

Enhanced photoluminescence by resonant absorption in Er-doped SiO2/Si microcavities

Y. Wong, N. Hunt, G. Zydzik, 1993 .

Erbium implantation in optical microcavities for controlled spontaneous emission

P. C. Becker, J. M. Poate, George John Zydzik, 1993 .

Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

Jurgen Michel, Lionel C. Kimerling, Eugene A. Fitzgerald, 1991 .

Characterizing Trace Metal Impurities in Optical Waveguide Materials Using X-Ray Absorption

M. Marcus, D. Jacobson, R. Atkins, 1998 .

Implanted Dopant-Defect Interactons in GaAs

D. Boerma, S. Pearton, J. Poate, 1987 .

Observations of structural order in ion-implanted amorphous silicon

D. Jacobson, J. Gibson, Ju-Yin Cheng, 2001 .

Mechanisms of ion-beam-enhanced diffusion in amorphous silicon

J. Poate, F. Priolo, D. Jacobson, 1992 .

Impurity trapping and gettering in amorphous silicon

A. Polman, J. Poate, D. Jacobson, 1991 .

Radiation-enhanced diffusion of implanted impurities in amorphous Si

S. U. Campisano, J. Poate, F. Priolo, 1989 .

Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

L. Pelaz, A. Agarwal, T. E. Haynes, 1997, International Electron Devices Meeting. IEDM Technical Digest.

The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

K. Bourdelle, J. Poate, D. Eaglesham, 1999 .

Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs

K. West, L. Pfeiffer, J. Poate, 1991 .

Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

P. Fuochi, M. Lavalle, J. Poate, 1997 .

EPR and RBS study of defects produced by MeV ion implantation into silicon

D. Jacobson, K. Reeson, W. Brown, 1992 .

Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon

P. A. Stolk, D. J. Eaglesham, J. M. Poate, 1996 .

Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon

P. Stolk, J. Poate, H. Gossmann, 1994 .

Proximity gettering of Au to ion beam induced defects in silicon

J. Poate, D. Eaglesham, D. Jacobson, 1995 .

Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams

J. Poate, F. Priolo, D. Jacobson, 1989 .

Zone refining and enhancement of solid phase epitaxial growth rates in Au‐implanted amorphous Si

J. Poate, D. Jacobson, G. Olson, 1986 .

The Enhancement of the Interdiffusion in Si/Ge Amorphous Artificial Multilayers by Additions of B and Au

J. Poate, D. Jacobson, F. Spaepen, 1989 .

Diffusion of Au in Amorphous Si During Ion-Beam Irradiation

S. U. Campisano, J. Poate, F. Priolo, 1988 .

Diffusion, Solubility and Segregation of Implanted Cu, Ag and Au in Amorphous Si

J. Poate, D. Jacobson, R. Elliman, 1986 .

Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.

J. Poate, D. Jacobson, R. Elliman, 1985 .

Laser Quenching of Amorphous Si from the Melt Containing Dopants

S. U. Campisano, J. Poate, D. Jacobson, 1983 .

Laser and Ion Beam Mixing Cr and Ni + Cr Films on Cu.

J. Poate, D. Jacobson, J. Vandenberg, 1981 .

Rutherford backscattering and marker diffusion to determine melt threshold in laser mirror damage studies.

J. Poate, D. Jacobson, L. Buene, 1981, Applied optics.

Laser surface alloying for passivation of TiPd

J. Poate, D. Jacobson, L. Buene, 1981 .

Studies of Laser-Alloyed Zr-Containing Surface Layers

E. Kaufmann, D. Jacobson, J. Vandenberg, 1981 .

Ridged LiNbO/sub 3/ modulators fabricated by a novel oxygen-ion implant/wet-etch technique

C. White, D. Jacobson, D. Gill, 2004, Journal of Lightwave Technology.

Electron field emission from ion‐implanted diamond

Sungho Jin, Alice E. White, G. Kochanski, 1995 .

Laser surface alloying of gold films on nickel

J. Poate, D. Jacobson, L. Buene, 1981 .

Ionization and Mass Spectrometry of Decaborane for Shallow Implantation of Boron into Silicon

J. Poate, M. Sosnowski, D. Jacobson, 2000 .

Transient enhanced diffusion from decaborane molecular ion implantation

T. E. Haynes, I. Yamada, J. Poate, 1998 .

Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si

D. Jacobson, C. Rafferty, T. Boone, 2000 .

Photoluminescence and structural characterization of MeV erbium-implanted silica glass

A. Polman, J. M. Poate, G. W. Arnold, 1991 .

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

R. Kistler, D. Jacobson, N. Moriya, 1995 .

Accuracy of SIMS in determining ion implanted B doses as confirmed by nuclear reaction analysis

H. Gossmann, D. Jacobson, C. Magee, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

Pulsed Laser Melting of Graphite 1

B. Wilkens, M. Dresselhaus, T. Venkatesan, 1985 .

The Structure of Ion-Implanted Amorphous Silicon

D. Jacobson, P. Voyles, M. Treacy, 1998 .

Raman study of de‐relaxation and defects in amorphous silicon induced by MeV ion beams

J. Poate, D. Jacobson, W. Sinke, 1990 .

LASER ALLOYING OF DEPOSITED METAL FILMS ON NICKEL

J. Poate, D. Jacobson, L. Buene, 1980 .

Mechanistic studies of hydrophilic wafer bonding and Si exfoliation for SOI fabrication

D. Jacobson, C. Hsieh, M. Weldon, 1996, 1996 IEEE International SOI Conference Proceedings.

TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON

P. Stolk, J. Poate, H. Gossmann, 1995 .

Composition- and Temperature-Dependence of Ion Mixing in Amorphous Si/Ge Artificial Multilayers

J. Poate, F. Priolo, D. Jacobson, 1988 .

Nanosecond Time Resolved Reflectivity Measurements At The Surface of Pulsed Laser Irradiated Graphite

M. Dresselhaus, T. Venkatesan, B. Elman, 1985 .

Trapping of Au in Si during pulsed laser irradiation: a comparison with ion beam induced segregation

J. Poate, F. Priolo, D. Jacobson, 1988 .

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

J. Poate, F. Priolo, D. Jacobson, 1988 .

Segregation and Trapping of Gold During Ion-Induced Crystallization of Amorphous Si

J. Poate, F. Priolo, D. Jacobson, 1988 .

Pressure Dependence of Arsenic Diffusivity in Silicon

J. Poate, D. Jacobson, D. Turnbull, 1985 .

Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks

J. Merz, L. Feldman, B. Weir, 1992 .

Structural relaxation and defect annihilation in pure amorphous silicon.

Jacobson, Eaglesham, Fuoss, 1991, Physical review. B, Condensed matter.

Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors

S. Saddow, D. Jacobson, J. Kolodzey, 2001 .

Behavior of Molybdenum in Silicon Evaluated for Integrated Circuit Processing

D. Eaglesham, D. Jacobson, T. Boone, 1999 .

Progress toward 10 nm CMOS devices

A. Ghetti, P. Silverman, D.M. Tennant, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics

T. Nigam, A. Kornblit, M.R. Baker, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Equilibrium shape of Si.

Jacobson, White, Eaglesham, 1993, Physical review letters.

Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition

S. Pearton, C. Abernathy, R. Caruso, 1987 .

Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBa 2 Cu 3 O 7-δ

R. Howard, J. Kwo, R. Dynes, 1987 .

Density Measurements of Ion Implanted Amorphous Silicon

J. Poate, D. Jacobson, W. Sinke, 1989 .

Implantation induced changes in quantum well structures

J. Merz, L. Feldman, B. Weir, 1993 .

The effect of the extra ion on residual damage in MeV implanted Si

P. Fuochi, M. Lavalle, J. Poate, 1997 .