C. Rafferty

发表

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

T. E. Haynes, P. Stolk, J. Poate, 1997 .

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

W. Lai, F. Baumann, D. Monroe, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Scaling the Si metal‐oxide‐semiconductor field‐effect transistor into the 0.1‐μm regime using vertical doping engineering

Mark R. Pinto, Abbas Ourmazd, C. S. Rafferty, 1991 .

Simulation of Silicon Processing

R. Dutton, C. Rafferty, M. Law, 1989 .

Optimum DMOS cell ~~~i~~ profiles for High- Voltage Discrete and Integrated Device Technologies

R. Dutton, H. Ohashi, C. Rafferty, 1992 .

Explanation of reverse short channel effect by defect gradients

M. R. Pinto, C. S. Rafferty, S. J. Hillenius, 1993, Proceedings of IEEE International Electron Devices Meeting.

Physical modeling of silicon thermal processing

C. Rafferty, 1994, ESSDERC '94: 24th European Solid State Device Research Conference.

Plastic analysis of cylinder oxidation

Robert W. Dutton, C. S. Rafferty, R. Dutton, 1989 .

Boron diffusion model refinement and its effect on the calculation of reverse short channel effect

Masami Hane, C. S. Rafferty, M. Hane, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

PISCES-IIB Supplementary report

R. Dutton, C. Rafferty, M. Pinto, 2005 .

Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469

P. Stolk, T. D. Rubia, C. Rafferty, 1997 .

The role of the surface in transient enhanced diffusion

F. Klemens, C. Rafferty, D. Lim, 1995 .

Active-gate thin-film transistor

S. Luryi, C. Rafferty, M. Pinto, 1993, IEEE Electron Device Letters.

IIB-8 high-performance latchup-free CMOS

K. Saraswat, R. Dutton, S. Swirhun, 1984, IEEE Transactions on Electron Devices.

Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors

T. E. Ham, W. Mansfield, D. Jacobson, 1996, International Electron Devices Meeting. Technical Digest.

Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices

C. Rafferty, S. Hillenius, H. Vuong, 1996 .

Boron pileup and clustering in silicon-on-insulator films

D. Monroe, H. Gossmann, D. Jacobson, 1999 .

Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

H. Gossmann, D. Jacobson, C. Rafferty, 1995 .

Diffusion of dopants in B‐ and Sb‐delta‐doped Si films grown by solid‐phase epitaxy

J. Poate, H. Gossmann, D. Jacobson, 1993 .

Nonlinear viscoelastic dilation of SiO2 films

Robert W. Dutton, L. M. Landsberger, C. S. Rafferty, 1989 .

Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter

T. E. Haynes, R. Kalyanaraman, H. Gossmann, 2001 .

Diffusion parameters of indium for silicon process modeling

C. Rafferty, I. Kizilyalli, F. Stevie, 1996 .

Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects

J. Poate, H. Gossmann, D. Eaglesham, 1994 .

Stress effects in silicon oxidation—simulation and experiments

C. Rafferty, Conor Stefan Rafferty, 1990 .

Electrical Properties of Cobalt and Copper Contamination in Processed Silicon

P. Silverman, D. Jacobson, C. Rafferty, 2001 .

B cluster formation and dissolution in Si: A scenario based on atomistic modeling

H. Gossmann, M. Jaraíz, C. Rafferty, 1999 .

Plastic flow during thermal oxidation of silicon

Robert W. Dutton, C. S. Rafferty, L. Borucki, 1989 .

Junctions for Deep Sub-100 NM MOS: How Far will Ion Implantation Take Us?

H. Gossmann, C. Rafferty, P. Keys, 2000 .

Determination of Si self‐interstitial diffusivities from the oxidation‐enhanced diffusion in B doping‐superlattices: The influence of the marker layers

J. Poate, H. Gossmann, C. Rafferty, 1995 .

Measuring Vacancy Diffusivity and Vacancy Assisted Clustering by Nitridation Enhanced Diffusion of Sb IN Si(100) Doping Superlattices

J. Poate, C. Rafferty, H. Luftman, 1994 .

Behavior of intrinsic Si point defects during annealing in vacuum

H. Gossmann, C. Rafferty, H. Luftman, 1995 .

Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities

J. Poate, H. Gossmann, C. Rafferty, 1993 .

Simulation of cluster evaporation and transient enhanced diffusion in silicon

Martin Jaraiz, George H. Gilmer, C. S. Rafferty, 1996 .

Series resistance limits for 0.05μm MOSFETs

C. S. Rafferty, K. Ng, H. Gossmann, 2000 .

Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si

D. Jacobson, C. Rafferty, T. Boone, 2000 .

Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion

G. Hobler, C. Rafferty, L. Pelaz, 2000 .

Fast metal diffusers in Si in the presence of Si self‐interstitial traps

P. Stolk, J. Poate, H. Gossmann, 1995 .

MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION : DEVIATION FROM THE +1' MODEL

G. Hobler, H. Gossmann, M. Jaraíz, 1998 .

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

J. Poate, H. Gossmann, M. Jaraíz, 1997 .

Continuum treatment of spatial correlation in damage annealing

Gerhard Hobler, Lourdes Pelaz, Conor S. Rafferty, 1999 .

Enhanced Diffusion in Silicon Processing

N. Cowern, C. Rafferty, 2000 .

Iterative Methods in Semiconductor Device Simulation

C.S. Rafferty, M.R. Pinto, R.W. Dutton, 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Ion implantation and transient enhanced diffusion

M. Jaraiz, P. Stolk, J. Poate, 1995, Proceedings of International Electron Devices Meeting.

89-GHz f/sub T/ room-temperature silicon MOSFETs

J. Bokor, M.D. Morris, D. Tennant, 1992, IEEE Electron Device Letters.

Two-dimensional dopant profiling of deep submicron MOS devices by electron holography

A. Ourmazd, P. Schwander, H. Rucker, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).