V. Srinivasan

A Performance Comparison between Hardened-byDesign and Conventional-Design Standard Cells

peixiong zhao, B. Narasimham, V. Ramachandran, .

Dosimetry aspects of hafnium oxide metal-oxide-semiconductor (MOS) capacitor

V. Srinivasan, A. Pandya, 2011 .

Small width effects on MOSFET hot-electron reliability

V. Srinivasan, J. Barnes, 1980, 1980 International Electron Devices Meeting.

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

H. S. Funk, B. Tillack, M. Oehme, 2016 .

Design of epitaxial Si punch-through diode based selector for high density bipolar RRAM

S. Lodha, V. Srinivasan, U. Ganguly, 2012, 2012 International Conference on Emerging Electronics.

Feasibility study of thin film Al/SnOx/n-Si gate stack for gamma radiation dosimetry

V. Srinivasan, A. Pandya, 2009 .

Gamma irradiation study of tin oxide thin films for dosimetric applications

V. Srinivasan, A. Pandya, M. Patra, 2007 .

Contact resistivities of antimony-doped n-type Ge1−xSnx

J. Schulze, M. Oehme, V. Srinivasan, 2016 .

On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations

R. Mandapati, A. Borkar, V. S. S. Srinivasan, 2013, IEEE Transactions on Nanotechnology.

The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance

Udayan Ganguly, Saurabh Lodha, Raju Mandapati, 2013, IEEE Transactions on Electron Devices.

On pairing bipolar RRAM memory element with novel punch-through diode based selector: Compact modeling to array performance

S. Lodha, V. Srinivasan, U. Ganguly, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Kurt Busch, Jörg Schulze, Inga A. Fischer, 2017, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).