Michele Incarnati

Selective, slow convergence in a programmable flash memory device

Tommaso Vali, Michele Incarnati, Giovanni Santin, 2006 .

A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology

Massimo Rossini, Tommaso Vali, Luca De Santis, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

Hyunseok Lee, Hoon Choi, Massimo Rossini, 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

Convergence selective slow programming a flash memory device.

Michele Incarnati, Giovanni Santin, Giuliano G Imondi, 2005 .

Heirarchical Full-Chip Fast-Simulation Based Design Mitigation of CHC in NAND Flash Memory

Balaji Vaidyanathan, Mattia Cichocki, Michele Incarnati, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s

Massimo Rossini, Tommaso Vali, Luca De Santis, 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).