P. Sherman

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

S. Le, S. Kanakasabapathy, J. Nowak, 2008, 2008 IEEE International Electron Devices Meeting.

1/f noise characterization of deep sub-micron dual thickness nitrided gate oxide n- and p-MOSFETs

S. Bhattacharya, P. Kempf, M. Matloubian, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).