R. Xiao

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

S. Le, S. Kanakasabapathy, J. Nowak, 2008, 2008 IEEE International Electron Devices Meeting.

First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange bias

R. Xiao, Q. Leng, W. Cai, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).