T. Torng

发表

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

S. Le, S. Kanakasabapathy, J. Nowak, 2008, 2008 IEEE International Electron Devices Meeting.

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

S. Le, T. Zhong, R. Tong, 2014 .

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, S. Le, C. Park, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Study of dielectric breakdown distributions in magnetic tunneling junction with MgO barrier

Terry Torng, Tai Min, Denny D. Tang, 2009 .

Magnetic forces for type II superconductors in a levitation field

T. Torng, Q. Y. Chen, 1993 .

Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms

Tom Zhong, Terry Torng, Luc Thomas, 2016, 2016 IEEE Symposium on VLSI Technology.

Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C

Tom Zhong, Terry Torng, Yung-Huei Lee, 2016, 2016 IEEE Symposium on VLSI Technology.

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Tom Zhong, Terry Torng, Guenole Jan, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Tom Zhong, Terry Torng, Luc Thomas, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

Tom Zhong, Terry Torng, Guenole Jan, 2012 .

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Tom Zhong, Terry Torng, Tai Min, 2010, IEEE Transactions on Magnetics.

Demonstration of chip level writability, endurance and data retention of an entire 8Mb STT-MRAM array

W. J. Gallagher, T. Torng, J. DeBrosse, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

MRAM Co-designed Processing-in-Memory CNN Accelerator for Mobile and IoT Applications

Terry Torng, Baohua Sun, Helen Liu, 2018, 1811.12179.

Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices

S. Le, T. Zhong, R. Tong, 2017, IEEE International Magnetics Conference.