P. Wang

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

S. Le, S. Kanakasabapathy, J. Nowak, 2008, 2008 IEEE International Electron Devices Meeting.

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, S. Le, C. Park, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Study of intermediate magnetization states in deep submicrometer MRAM cells

S. Le, T. Min, C. Horng, 2005, IEEE Transactions on Magnetics.

Demonstration of chip level writability, endurance and data retention of an entire 8Mb STT-MRAM array

W. J. Gallagher, T. Torng, J. DeBrosse, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices

S. Le, T. Zhong, R. Tong, 2017, IEEE International Magnetics Conference.