H. Karbasi

Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors

J. Babcock, M. Ershov, S. Saxena, 2003 .

Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors

J. Babcock, M. Ershov, S. Saxena, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Degradation dynamics, recovery, and characterization of negative bias temperature instability

S. Minehane, H. Karbasi, M. Ershov, 2005, Microelectron. Reliab..

Variation in Transistor Performance and Leakage in Nanometer-Scale Technologies

S. Minehane, C. Hess, M. Quarantelli, 2008, IEEE Transactions on Electron Devices.