M. El Nokali

发表

Analytical model for C–V characteristic of fully depleted SOI–MOS capacitors

Ali Afzali-Kusha, Behrouz Afzal, A. Zahabi, 2005 .

CMOS latchup modelling: a new approach

Wei Li, M. El Nokali, 1988 .

Simple two-sections model for short channel MOS transistors in saturation

M. El Nokali, H. Miranda, 1986 .

A self‐consistent model for short‐channel mosfets

M. El Nokali, M. El Banna, 1989 .

An analytical model for the capacitances in short-channel MOSFETs

M. El Nokali, R. Gharabagi, 1990 .

Transient analysis for a new CMOS latchup model

M. El Nokali, Wei Li, 1987 .

MODFET DC model based on a new velocity-electric field characteristic

M. El Nokali, Qincui Xia, M. Nokali, 1991 .

Inverse modeling and its application in the design of high electron mobility transistors

M. El Nokali, M. Nokali, H. Ahn, 1995 .

A simple model for the MOS transistor in saturation

M. El Nokali, M. Nokali, H. Miranda, 1986 .

An analytical model for high electron mobility transistors

M. El Nokali, M. Nokali, H. Ahn, 1994 .

A pseudo-two-dimensional analysis of short channel MOSFETs

M. El Nokali, M. El Banna, 1988 .

A new model for CMOS latch-up

Wei Li, M. El Nokali, 1987 .

2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET

Ali Afzali-Kusha, M. El Nokali, P. Hashemi, 2005 .