V. Carron

发表

Advances in 3D CMOS sequential integration

A. Toffoli, O. Cueto, O. Faynot, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS

N. Cherkashin, J. Hartmann, O. Weber, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Enabling 3D Monolithic Integration

H. Grampeix, S. Deleonibus, P. Batude, 2008 .

3D monolithic integration: Technological challenges and electrical results

H. Grampeix, O. Faynot, S. Deleonibus, 2011 .

Thermal stability enhancement of Ni-based silicides, germano-silicides and germanides using W and F implantation for 3D CMOS sequential integration

Yves Morand, Perrine Batude, Louis Hutin, 2014, 2014 International Workshop on Junction Technology (IWJT).

20nm gate length trigate pFETs on strained SGOI for high performance CMOS

X. Garros, O. Faynot, P. Batude, 2010, 2010 Symposium on VLSI Technology.

Metallic source and drain module for FDSOI MOSFETs applications

O. Faynot, M. Vinet, L. Hutin, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

Highly performant FDSOI pMOSFETs with metallic source/drain

O. Cueto, V. Balan, O. Faynot, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

InP-based composite substrates for four junction concentrator solar cells

Shay Reboh, Eric Guiot, Thomas Signamarcheix, 2015 .

Realization and characterization of thin single crystal Ge films on sapphire

F. Dimroth, B. Ghyselen, L. Benaissa, 2013 .

Junction technology outlook for sub-28nm FDSOI CMOS

Laurent Grenouillet, Yves Morand, Maud Vinet, 2014, 2014 International Workshop on Junction Technology (IWJT).

Evaluation Of Ni(Si1-xGex) And Pt(Si1-xGex) Contact Resistance For FD-SOI PMOS Metallic Source And Drain

O. Cueto, F. Allain, M. Vinet, 2013 .

Nickel vs. cobalt silicide integration for sub-50nm CMOS

R. Pantel, F. Boeuf, F. Wacquant, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature: Role of agglomeration

V. Carron, D. Mangelinck, P. Holliger, 2006 .

Chemistry in the “Front End of the Line” (FEOL)

J. Hartmann, V. Carron, Y. L. Tiec, 2013 .

Mechanical understanding of 100 mm InP and GaAs direct bonded heterostructure

T. Salvetat, F. Fournel, V. Carron, 2015 .

Kinetics of low temperature direct copper–copper bonding

L. Benaissa, M. Verdier, V. Carron, 2015 .

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

H. Grampeix, J. Hartmann, P. Batude, 2011 .

Wet Etching Step Evolutions for Selective Removal on Silicide or Germanide Applications

P. Besson, V. Carron, F. Pierre, 2007 .

Mechanical understanding of 100 mm InP and GaAs direct bonded heterostructure

T. Salvetat, F. Fournel, V. Carron, 2015, Microsystem Technologies.

Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution

Jean-Michel Hartmann, Veronique Carron, J. Hartmann, 2010 .

Optimized nickel silicide process formation for high performance sub-65nm CMOS nodes

F. Wacquant, A. Pouydebasque, V. Carron, 2004 .

NICKEL SILICIDE FORMATION USING A STACKED HOTPLATE-BASED LOW TEMPERATURE ANNEALING SYSTEM

V. Carron, W. Yoo, T. Murakami, 2003 .

Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography

Jean-Michel Hartmann, Veronique Carron, J. Hartmann, 2010 .

B diffusion in implanted Ni2Si and NiSi layers

V. Carron, D. Mangelinck, L. Chow, 2010 .

Lattice and grain-boundary diffusion of As in Ni2Si

V. Carron, D. Mangelinck, C. Perrin, 2008 .

Self-aligned nickel–platinum silicide oxidation

R. Beneyton, V. Carron, B. Imbert, 2008 .

Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions

V. Carron, D. Mangelinck, P. Holliger, 2008 .

Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation

Patrice Gergaud, Herve Jaouen, M. Gailhanou, 2005 .

Boron clustering in implanted NiSi

V. Carron, D. Mangelinck, L. Chow, 2011 .

Measurement of As diffusivity in Ni2Si thin films

V. Carron, D. Mangelinck, J. Lábár, 2010 .

Dopant diffusivity and solubility in nickel silicides

V. Carron, D. Mangelinck, L. Chow, 2011 .

Dopant Effect On NiGe Texture During Nickel Germanide Growth

O. Kermarrec, Y. Campidelli, F. Nemouchi, 2007 .

Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering

David Cooper, Yves Morand, Jean-Michel Hartmann, 2013 .

Dual metallic source and drain integration on planar Single and Double Gate SOI CMOS down to 20nm: Performance and scalability assessment

O. Faynot, M. Vinet, D. Lafond, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Advances, challenges and opportunities in 3D CMOS sequential integration

J. Mazurier, O. Faynot, P. Batude, 2011, 2011 International Electron Devices Meeting.

Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS

D. Delille, Y. Morand, S. Descombes, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Double SiGe:C diffusion barrier channel 40nm CMOS with improved short-channel performances

A. Toffoli, J. Cluzel, J. Hartmann, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain

M. Vinet, D. Lafond, S. Deleonibus, 2009, IEEE Electron Device Letters.

GeOI and SOI 3D monolithic cell integrations for high density applications

X. Garros, O. Rozeau, O. Faynot, 2006, 2009 Symposium on VLSI Technology.

Kinetics of low temperature direct copper–copper bonding

L. Benaissa, M. Verdier, V. Carron, 2015, Microsystem Technologies.

Chip to wafer direct bonding technologies for high density 3D integration

F. Fournel, L. Di Cioccio, E. Augendre, 2012, 2012 IEEE 62nd Electronic Components and Technology Conference.