H. Yokoyama

发表

Fundamental oscillations at ~900 GHz with low bias voltages in RTDs with spike-doped structures

S. Suzuki, K. Sawada, A. Teranishi, 2010 .

Metal-organic vapor-phase epitaxy growth of InP-based HEMT structures with InGaAs/InAs composite channel

H. Sugiyama, H. Yokoyama, H. Matsuzaki, 2012, 2012 International Conference on Indium Phosphide and Related Materials.

High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology

Tetsuya Suemitsu, Yohtaro Umeda, Takatomo Enoki, 1999 .

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Gaudenzio Meneghesso, Enrico Zanoni, 2002 .

InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

M. Takenaka, S. Takagi, H. Yokoyama, 2016 .

Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs

T. Otsuji, T. Enoki, H. Yokoyama, 1998 .

Impact of two-step-recessed gate structure on RF performance of InP-based HEMTs

T. Enoki, H. Yokoyama, T. Suemitsu, 1998 .

High-performance 0.1-/spl mu/m-gate enhancement-mode InAlAs/InGaAs HEMTs using two-step-recessed gate technology

T. Enoki, H. Yokoyama, T. Suemitsu, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique

H. Yokoyama, A. Chayahara, T. Imura, 1987 .

50-Gbit/s vertical illumination avalanche photodiode for 400-Gbit/s Ethernet systems.

T. Ishibashi, H. Yokoyama, H. Matsuzaki, 2014, Optics express.

High-sensitivity 25 Gbit/s avalanche photodiode receiver optical sub-assembly for 40 km transmission

Masahiro Nada, Yoshifumi Muramoto, Tadao Ishibashi, 2012 .

Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile

Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, 2012 .

InAlAs APD with high multiplied responsivity-bandwidth product (MR-bandwidth product) of 168 A/W.GHz for 25 Gbit/s high-speed operations

Masahiro Nada, Yoshifumi Muramoto, Tadao Ishibashi, 2012 .

Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability

T. Ishibashi, H. Yokoyama, H. Matsuzaki, 2014, Journal of Lightwave Technology.

High-speed high-power-tolerant avalanche photodiode for 100-Gb/s applications

H. Yokoyama, H. Matsuzaki, Y. Muramoto, 2014, 2014 IEEE Photonics Conference.

Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode

M. Asada, H. Sugiyama, H. Yokoyama, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors

Tetsuya Suemitsu, Takatomo Enoki, Haruki Yokoyama, 1998 .

Heterogeneously Integrated PLC With Low-Loss Spot-Size Converter and Newly Developed Waveplate PBS for DC-DP-16QAM Receiver

Shinichi Aozasa, Hiroshi Yamazaki, Mikitaka Itoh, 2015, Journal of Lightwave Technology.

Side-gate effects on transfer characteristics in GaN-based transversal filters

Naoteru Shigekawa, Haruki Yokoyama, Kazumi Nishimura, 2005 .

Analysis of electrical properties of insulators (Si3N4, SiO2, AlN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures

T. Enoki, H. Yokoyama, T. Makimōto, 2007 .

High-power-tolerant InAlAs avalanche photodiode for 25 Gbit/s applications

T. Ishibashi, H. Yokoyama, H. Matsuzaki, 2013 .

Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2005 .

Enhanced Gate Swing in InP HEMTs With High Threshold Voltage by Means of InAlAsSb Barrier

H. Sugiyama, H. Yokoyama, T. Suemitsu, 2007, IEEE Electron Device Letters.

Composition and doping control for metal?organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

M. Ida, K. Kurishima, H. Sugiyama, 2017 .

Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition

M. Ida, K. Kurishima, H. Sugiyama, 2013 .

Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors

H. Yokoyama, T. Makimōto, Chengxin Wang, 2006 .

Surface Acoustic Waves in Reverse-Biased AlGaN/GaN Heterostructures

H. Yokoyama, N. Shigekawa, K. Hohkawa, 2008, IEEE Transactions on Electron Devices.

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

H. Yokoyama, N. Shigekawa, A. Yamamoto, 2012 .

RF and DC characteristics in Al2O3/Si3N4 insulated‐gate AlGaN/GaN heterostructure field‐effect transistors with regrown ohmic structure

T. Makimura, T. Enoki, H. Yokoyama, 2006 .

Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates

T. Enoki, H. Yokoyama, T. Suemitsu, 1999 .

Aligned carbon–hydrogen complexes in GaAs formed by the decomposition of trimethylgallium during metalorganic vapor phase epitaxy and atomic layer epitaxy

H. Fushimi, H. Yokoyama, K. Wada, 1997 .

Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

H. Yokoyama, N. Shigekawa, N. Watanabe, 2013 .

Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors

H. Sugiyama, H. Yokoyama, Takashi Kobayashi, 2004 .

Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD

H. Yokoyama, M. Okamoto, T. Imura, 1990 .

Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers

H. Yokoyama, M. Okamoto, Y. Ōsaka, 1990 .

Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition

H. Yokoyama, Masaki Okamoto Masaki Okamoto, Yukio Osaka Yukio Osaka, 1991 .

Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

M. Ida, K. Kurishima, H. Sugiyama, 2014 .

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Toshihiko Kosugi, Masami Tokumitsu, Hiroki Sugiyama, 2007 .

DC—40-GHz SP4T switch IC using high-breakdown-voltage InGaAs/InP composite-channel HEMTs with an InAlP etch stopper

K. Murata, T. Enoki, H. Kamitsuna, 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer

H. Sugiyama, H. Yokoyama, Kazuo Watanabe, 2003 .

Photoluminescence spectra from δ-doped barrier layers in modulation-doped InAlAs/InGaAs field-effect transistor structures

H. Yokoyama, Kazuo Watanabe, 2000 .

Photoluminescence properties of δ-doped barrier layers in modulation-doped InAlAs/InGaAs field-effect transistor structures

H. Yokoyama, Kazuo Watanabe, 2001 .

Hydrogen passivation of carbon acceptors in AlAs grown by atomic layer epitaxy

H. Yokoyama, N. Inoue, 1994 .

Heterogeneous integration of high-speed InP PDs on silica-based planar lightwave circuit platform

Y. Nasu, H. Yokoyama, Y. Muramoto, 2011, 2011 37th European Conference and Exhibition on Optical Communication.

Study of lowering onset gain for a high-speed InGaAs/InAlAs avalanche photodiode

T. Ishibashi, H. Yokoyama, H. Matsuzaki, 2013, 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

Silica-based PLC with heterogeneously-integrated PDs for one-chip DP-QPSK receiver

Shinichi Aozasa, Takayuki Mizuno, Yoshifumi Muramoto, 2012, 2012 38th European Conference and Exhibition on Optical Communications.

Characterization of BN Thin Films Deposited by Plasma CVD

H. Yokoyama, A. Chayahara, T. Imura, 1991 .

30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Y. Umeda, T. Suemitsu, T. Enoki, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

M. Ida, H. Yokoyama, N. Shigekawa, 2012 .

P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

H. Yokoyama, T. Hoshi, 2014 .

Effects of interface flatness and abruptness on optical and electrical characteristics of GaAs/AlGaAs quantum structures grown by metalorganic vapor phase epitaxy

H. Yokoyama, N. Inoue, M. Shinohara, 1995 .

Ultra-thin in InAlP/InGaAs heterojunctins grown by metal-organic vapor-phase epitaxy

T. Enoki, A. Teranishi, H. Sugiyama, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

Takatomo Enoki, Toshiki Makimoto, Noriyuki Watanabe, 2007 .

Insulator engineering in GaN-based MIS HFETs

Toshiki Makimoto, Noriyuki Watanabe, Haruki Yokoyama, 2007, SPIE OPTO.

Suppression of space charge effect in MIC-PD using composite field structure

Toshihide Yoshimatsu, Tomofumi Furuta, Yoshifumi Muramoto, 2010 .

Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence

H. Yokoyama, Kazuo Watanabe, 1999 .

A simple method for forming compositionally graded InxGa1−xAs1−ySby base of double-heterojunction bipolar transistors modulating CBr4-doping-precursor flow in metalorganic chemical vapor deposition

M. Ida, K. Kurishima, H. Sugiyama, 2014 .

Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition

M. Ida, K. Kurishima, H. Sugiyama, 2012 .

Carbon-doped InxGa1−xAs1−ySby on InP grown by metal-organic chemical vapor deposition

M. Ida, K. Kurishima, H. Sugiyama, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Growth mechanism in heavily carbon-doped GaAsxSb1−x grown by MOCVD

H. Yokoyama, Takashi Kobayashi, N. Watanabe, 2003 .

Carbon doping in InAlAs grown by metalorganic chemical vapor deposition

Hiroshi Ito, H. Yokoyama, 1997 .

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2010 .

Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs

M. Tanimoto, H. Yokoyama, N. Inoue, 1994 .

Morphology on GaAs surfaces grown by metalorganic chemical vapor deposition and molecular beam epitaxy

H. Yokoyama, J. Osaka, K. Ikuta, 1994 .

Atomic layer epitaxy of GaAs using nitrogen carrier gas

H. Yokoyama, N. Inoue, M. Shinohara, 1991 .

MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

Hideaki Matsuzaki, Takuya Hoshi, Hiroki Sugiyama, 2014 .

Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP

H. Sugiyama, H. Yokoyama, Michio Sato, 2004 .

Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Noriyuki Watanabe, Haruki Yokoyama, Yasuhiro Oda, 2004 .

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Hideki Yamamoto, H. Yokoyama, K. Kumakura, 2013 .

Behavior and mechanism of wide terrace formation during metalorganic vapor phase epitaxy of GaAs and related materials

M. Tanimoto, H. Yokoyama, N. Inoue, 1994 .

Properties of BN thin films deposited by plasma CVD

H. Yokoyama, A. Chayahara, M. Fujisawa, 1988 .

Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

R. Iga, H. Yokoyama, N. Shigekawa, 2016 .

Self-limiting and step-propagating nature of GaAs atomic layer epitaxy revealed by atomic force microscopy

M. Tanimoto, H. Yokoyama, N. Inoue, 1994 .

MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content

Akio Yamamoto, Naoteru Shigekawa, Noriyuki Watanabe, 2012 .

Analysis of interconnections with BCB for high-speed digital applications

K. Osafune, T. Enoki, Y. Umeda, 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

Effects of buffered HF cleaning on metal–oxide–semiconductor interface properties of Al2O3/InAs/GaSb structures

M. Takenaka, S. Takagi, H. Sugiyama, 2015 .

Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

M. Takenaka, S. Takagi, H. Yokoyama, 2015 .

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

M. Takenaka, S. Takagi, H. Yokoyama, 2014 .

Resonant Tunneling Diodes with Very High Peak Current Density Using Thin Barrier and High Emitter Doping

S. Suzuki, A. Teranishi, H. Sugiyama, 2008, 2008 Device Research Conference.

InP-based strained In/sub 0.8/Ga/sub 0.2/As/AlAs resonant tunneling diodes with high peak-current density and large peak-to-valley current ratio grown by metal-organic vapor-phase epitaxy

H. Yokoyama, H. Matsuzaki, Y. Oda, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si

S. Takagi, H. Sugiyama, M. Takenaka, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

M. Takenaka, S. Takagi, H. Yokoyama, 2015 .

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

M. Takenaka, S. Takagi, H. Sugiyama, 2014 .

Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

M. Takenaka, S. Takagi, H. Yokoyama, 2014 .

Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

M. Takenaka, S. Takagi, H. Yokoyama, 2014 .

Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2012, IEICE Trans. Electron..

High Output Power (∼400 µW) Oscillators at around 550 GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2011 .

RTD oscillators at 430–460 GHz with high output power (~200 µW) using integrated offset slot antennas

M. Asada, H. Sugiyama, H. Yokoyama, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Extremely High Peak Current Densities of over 1×106 A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2010 .

Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2010 .

Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas

M. Asada, H. Sugiyama, H. Yokoyama, 2009, 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves.

Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2009 .

Sub-THz RTD oscillators integrated with planar horn antennas for horizontal radiation

M. Asada, H. Sugiyama, H. Yokoyama, 2008, 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves.

Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2012, IEICE Electron. Express.

Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (∼200 µW) Using Offset-Fed Slot Antenna and High Current Density

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2009 .

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

Naoteru Shigekawa, Noriyuki Watanabe, Haruki Yokoyama, 2014 .

Atomic layer epitaxy of AlAs using thermally decomposed gas molecules

H. Yokoyama, N. Inoue, M. Shinohara, 1992 .

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

Hideki Yamamoto, H. Yokoyama, K. Kumakura, 2013 .

GaAs/AlAs quantum structures grown by atomic layer epitaxy

H. Yokoyama, N. Inoue, M. Shinohara, 1992 .

STM and AFM Observations of (NH4)2Sx-Treated GaAs (100) Surfaces

M. Tanimoto, H. Yokoyama, M. Shinohara, 1994 .

30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

Tetsuya Suemitsu, Toshiaki Tamamura, Takatomo Enoki, 1999 .

III–V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si

M. Takenaka, S. Takagi, H. Yokoyama, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

High-speed avalanche photodiodes for 100-Gb/s systems and beyond

Hideaki Matsuzaki, Masahiro Nada, Toshihide Yoshimatsu, 2014, 2014 The European Conference on Optical Communication (ECOC).

MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

H. Sugiyama, H. Yokoyama, Michio Sato, 2003 .