P. Buchmann

发表

0.94ps-rms-jitter 0.016mm/sup 2/ 2.5GHz multi-phase generator PLL with 360/spl deg/ digitally programmable phase shift for 10Gb/s serial links

T. Toifl, C. Menolfi, P. Buchmann, 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

Special Issue Papers Full-Wafer Technology-A New Approach to Large-scale Laser Fabrication and Integration

David J. Webb, Peter Vettiger, Peter Buchmann, 1991 .

A 4.6 W/mm2 Power Density 86% Efficiency On-Chip Switched Capacitor DC-DC Converter in 32nm SOI CMOS

J. Kolar, T. Toifl, C. Menolfi, 2012 .

High-power ridge-waveguide AlGaAs GRIN-SCH laser diode

P. Buchmann, C. Harder, H. Meier, 1986 .

Lattice disorder, facet heating and catastrophic optical mirror damage of AlGaAs quantum well lasers

P. Buchmann, P. Epperlein, A. Jakubowicz, 1993 .

Probe beam heating of AlGaAs single-quantum-well laser facets in Raman microprobe spectroscopy

D. Webb, P. Vettiger, P. Buchmann, 1990 .

GaAs single-mode rib waveguides with reactive ion-etched totally reflecting corner mirrors

P. Buchmann, H. Kaufmann, P. Buchmann, 1985 .

Multi-Phase Generator PLL with 360° Digitally Programmable Phase Shift for 10Gb/s Serial Links

Thomas Toifl, Christian Menolfi, Marcel Kossel, 2005 .

Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)

Wilfried Lenth, Peter Vettiger, Peter Buchmann, 1991 .

Very high power (500mW) AlGaAs SQW grinsch ridge laser with frequency doubled output (40mW at 428nm)

W. J. Kozlovsky, G. Bona, P. Vettiger, 1990, 12th IEEE International Conference on Semiconductor Laser.

Reactive ion etched GaAs optical waveguide modulators with low loss and high speed

P. Buchmann, H. Melchior, G. Guekos, 1984 .

Chapter 7 – FULL-WAFER TECHNOLOGY FOR LARGE-SCALE LASER FABRICATION AND INTEGRATION

D. Webb, P. Vettiger, P. Buchmann, 1995 .

Chemically assisted ion beam etching process for high quality laser mirrors

P. Vettiger, P. Buchmann, H. Dietrich, 1989 .

A high-density, four-channel, OEIC transceiver module utilizing planar-processed optical waveguides and flip-chip, solder-bump technology

P. Buchmann, Peter Vettiger, Jeannine M. Trewhella, 1994 .

Crystal Growth and Liquid Phase Epitaxy of KNbO3 from a K2O–V2O5 Flux

H. Melchior, P. Buchmann, P. Bohác, 1985 .

Self-adjusted permanent attachment of fibres to GaAs waveguide components

P. Buchmann, H. Melchior, G. Guekos, 1986 .

Wide tuning range LC-oscillator in 65nm SOI CMOS, based on switchable secondary inductor

Thomas Toifl, Martin L. Schmatz, Christian Menolfi, 2007 .

Resistance of very small area ohmic contacts on GaAs

P. Vettiger, P. Buchmann, K. Daetwyler, 1989 .

A 4.6W/mm2 power density 86% efficiency on-chip switched capacitor DC-DC converter in 32 nm SOI CMOS

J. W. Kolar, T. M. Andersen, F. Krismer, 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

Broadband low-reflectivity coating for semiconductor power lasers by ion-beam and PECVD deposition

D. Webb, P. Vettiger, P. Buchmann, 1989 .

Stepwise‐graded‐index multilayer broadband low‐reflectivity coating for AlGaAs/GaAs power lasers

D. Webb, P. Vettiger, P. Buchmann, 1989 .

Beam properties of AlGaAs power lasers with high-quality etched mirrors

D. Webb, G. Bona, P. Vettiger, 1991, IEEE Photonics Technology Letters.

A 28-Gb/s 4-Tap FFE/15-Tap DFE Serial Link Transceiver in 32-nm SOI CMOS Technology

Thomas Toifl, Christian Menolfi, Andrea Prati, 2012, IEEE Journal of Solid-State Circuits.

4.7 A sub-ns response on-chip switched-capacitor DC-DC voltage regulator delivering 3.7W/mm2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS

Johann W. Kolar, Thomas Toifl, Christian Menolfi, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

High‐power single‐mode AlGaAs lasers with bent‐waveguide nonabsorbing etched mirrors

Johann Peter Reithmaier, P. Buchmann, F. R. Gfeller, 1992 .

Nanometer sidewall lithography by resist silylation

P. Vettiger, P. Buchmann, K. Datwyler, 1989 .

50 mW CW-operated single-mode surface-emitting AlGaAs lasers with 45 degrees total reflection mirrors

P. Vettiger, P. Buchmann, D. Webb, 1992, IEEE Photonics Technology Letters.

A 2.6 mW/Gbps 12.5 Gbps RX With 8-Tap Switched-Capacitor DFE in 32 nm CMOS

Christian Menolfi, Andrea Prati, Matthias Braendli, 2012, IEEE Journal of Solid-State Circuits.

A T-Coil-Enhanced 8.5 Gb/s High-Swing SST Transmitter in 65 nm Bulk CMOS With $≪ -$16 dB Return Loss Over 10 GHz Bandwidth

Thomas Toifl, Martin L. Schmatz, Christian Menolfi, 2008, IEEE Journal of Solid-State Circuits.

LC PLL With 1.2-Octave Locking Range Based on Mutual-Inductance Switching in 45-nm SOI CMOS

T. Toifl, C. Menolfi, T. Morf, 2009, IEEE Journal of Solid-State Circuits.

KNbO3 electro‐optic induced optical waveguide/cut‐off modulator

P. Günter, P. Buchmann, H. Melchior, 1985 .

Totally Reflecting Mirrors: Fabrication and Application in GaAs Rib Waveguide Devices

H. Melchior, P. Buchmann, G. Guekos, 1985 .

Fabrication of curved mirrors for visible semiconductor lasers using electron-beam lithography and chemically assisted ion-beam etching

R. Germann, P. Buchmann, P. Unger, 1993 .

High-resolution electron-beam lithography for fabricating visible semiconductor lasers with curved mirrors and integrated holograms

Peter Buchmann, P. Unger, Roland Germann, 1994 .

A 0.94-ps-RMS-jitter 0.016-mm/sup 2/ 2.5-GHz multiphase generator PLL with 360/spl deg/ digitally programmable phase shift for 10-Gb/s serial links

T. Toifl, C. Menolfi, T. Morf, 2005, IEEE Journal of Solid-State Circuits.

Gallium Arsenide Waveguide Interferometers And Couplers For High-Speed Electro-Optic Modulation And Switching

P. Buchmann, G. Guekos, H. Melchior, 1986, Other Conferences.

Broadband Y‐branch electro‐optic GaAs waveguide interferometer for 1.3 μm

H. Melchior, P. Buchmann, G. Guekos, 1985 .