J. Snyder

发表

Overview and status of metal S/D Schottky-barrier MOSFET technology

J. Larson, J. Snyder, 2006, IEEE Transactions on Electron Devices.

Correlation between inversion layer mobility and surface roughness measured by AFM

C. R. Helms, J. Snyder, T. Yamanaka, 1996, IEEE Electron Device Letters.

SUB-40 NM PTSI SCHOTTKY SOURCE/DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

J. Snyder, C. Wang, J. Tucker, 1999 .

On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices

Udo Schwalke, Tillmann Krauss, Alexander Kloes, 2017, IEEE Transactions on Electron Devices.

Analysis of the potential distribution in the channel region of a platinum silicided source/drain metal oxide semiconductor field effect transistor

C. R. Helms, Y. Nishi, J. Snyder, 1999 .

Fano resonance in electron transport through single dopant atoms

W. Wernsdorfer, J. Snyder, L. Calvet, 2011 .

Transport spectroscopy of single Pt impurities in silicon using Schottky barrier MOSFETs

M. Reed, W. Wernsdorfer, J. Snyder, 2008, Journal of physics. Condensed matter : an Institute of Physics journal.

Experimental investigation of a PtSi source and drain field emission transistor

C. R. Helms, Yoshio Nishi, Y. Nishi, 1995 .

The effect of source/drain processing on the reverse short channel effect of deep sub-micron bulk and SOI NMOSFETs

James D. Plummer, Peter B. Griffin, P. Griffin, 1995, Proceedings of International Electron Devices Meeting.

High-speed Schottky-barrier pMOSFET with f/sub T/=280 GHz

M. Fritze, B. Wheeler, P. Wyatt, 2004, IEEE Electron Device Letters.

Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors

Mark A. Reed, John R. Tucker, L. E. Calvet, 2002 .

The Schottky barrier transistor in emerging electronic devices

V. Derycke, B. Iñíguez, J. Snyder, 2023, Nanotechnology.