F. Leon

Numerical Algorithms For Precise Calculation Of Surface Movement In 3-D Topography Simulation

D. Scharfetter, F. Leon, S. Tazawa, 1993, [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD).

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

A. Tasch, E. Wang, F. Leon, 1998 .

Stability Issues in Self-Consistent Monte Carlo-Poisson Simulations

A. Ghetti, F. Leon, F. Venturi, 1995 .

Electronic Structure of CuZr and PdSi Metallic Glasses

Keith H. Johnson, F. Leon, 1981 .

Phonon-Limited Electron Mobility in a Polar Semiconductor Quantum Well

F. Leon, F. Comas, H. León, 1992 .

Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization

M. Giles, F. Leon, S. Odanaka, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

3-D topography simulation of via holes using generalized solid modeling

S. Tazawa, A. Yoshii, D. L. Scharfetter, 1992, 1992 International Technical Digest on Electron Devices Meeting.