C. Reynolds

Y. Akulova, C. Reynolds, G. Shtengel, 2000, Optical Fiber Communication Conference. Technical Digest Postconference Edition. Trends in Optics and Photonics Vol.37 (IEEE Cat. No. 00CH37079).

Formation of titanium hydrides in (Al, Ga)As double‐heterostructure laser contacts and their effect on degradation rate

W. R. Holbrook, C. Reynolds, B. Hakki, 1986 .

Controlling morphology and chain aggregation in semiconducting conjugated polymers: the role of solvent on optical gain in MEH-PPV.

C. Reynolds, M. O. Aboelfotoh, Zach E. Lampert, 2012, The journal of physical chemistry. B.

Morphology and chain aggregation dependence of optical gain in thermally annealed films of the conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene]

John M. Papanikolas, C. Lewis Reynolds, C. Reynolds, 2013 .

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

K. Evans, C. Reynolds, D. Dumcenco, 2011 .

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(1 1 2¯ 0)

R. Davis, C. Reynolds, S. Bishop, 2009 .

Intrinsic optical gain in thin films of a conjugated polymer under picosecond excitation

C. Reynolds, S. Lappi, Zach E. Lampert, 2013 .

Role of p-Doping Profile and Regrowth on the Static Characteristics of 1 . 3m MQW InGaAsP – InP Lasers : Experiment and Modeling

C. L. Reynolds, Mark S. Hybertsen, R. F. Kazarinov, 1999 .

Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

S. Luryi, G. Belenky, R. Kazarinov, 1997, IEEE Photonics Technology Letters.

Optimization of p-doping profile of 1.3-/spl mu/m InGaAsP/InP MQW lasers for high-temperature operation

S. Luryi, G. Belenky, R. Kazarinov, 1998, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures

Robert R. Alfano, C. L. Reynolds, W. B. Wang, 2001 .

Control of sidegating effects in AlGaAs/GaAs heterostructure field‐effect transistors by modification of GaAs wafer surfaces

C. Reynolds, J. Parsey, M. L. Gray, 1990 .

Intrinsic gain and gain degradation modulated by excitation pulse width in a semiconducting conjugated polymer

C. Reynolds, S. Lappi, Zach E. Lampert, 2017 .

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

C. Reynolds, Yang Liu, S. Iyer, 2017, Scientific Reports.

Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films

J. Maria, J. Narayan, C. Reynolds, 2019, Applied Physics A.

Optimization of InGaP metamorphic buffers grown by MOVPE

C. Reynolds, C. Ebert, Z. Pulwin, 2015 .

Bandgap tuning in GaAs1−xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy

C. Reynolds, S. Ojha, Y. Liu, 2017 .

Shallow acceptor complexes in p-type ZnO

J. Muth, C. Reynolds, D. Aspnes, 2013 .

Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1–xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 μm

C. Reynolds, Yang Liu, Surya Nalamati, 2018, Semiconductor Science and Technology.

Cathodoluminescence observation of excitons confined to a two‐dimensional electron gas in a selectively doped heterostructure

C. Reynolds, V. Swaminathan, S. Lengle, 1991 .

Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures

R. Davis, C. Reynolds, K. Bachmann, 2004 .

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

P. Kotula, C. Reynolds, K. Bachmann, 2004 .

Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers

S. Luryi, G. Belenky, R. Kazarinov, 1996 .

Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy

C. Reynolds, Yang Liu, P. Deshmukh, 2017 .

Inhibition of etching in oxygen-implanted AlGaAs

S. M. Parker, C. Reynolds, R. E. Ahrens, 1992 .

Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure

C. Reynolds, H. Vuong, 1992 .

Self‐aligned rib‐waveguide large optical cavity AlGaAs laser for high‐power single‐mode operation

W. R. Holbrook, J. A. Shimer, N. Olsson, 1985 .

Modification of properties of yttria stabilized zirconia epitaxial thin films by excimer laser annealing.

J. Narayan, C. Reynolds, R. Bayati, 2014, ACS applied materials & interfaces.

Te incorporation in GaAs1−xSbx nanowires and p-i-n axial structure

M. R. Karim, C. Reynolds, Yang Liu, 2016 .

Thermal stability, mechanical and electrical properties of nanocrystalline Cu3Ge

R. Scattergood, C. Koch, J. Narayan, 2008 .

Influence of cooling rate on the short-time LPE growth of the active layer in (Al, Ga)As dh lasers

C. Reynolds, M. Tamargo, C. Gaw, 1982 .

Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering

T. Ambrose, C. Reynolds, S. Nakahara, 1990 .

Analysis of the short-time liquid phase epitaxial growth of AlxGa1-xAs

C. Reynolds, M. Tamargo, P. Anthony, 1982 .

Dopant-induced disordering of annealed AlGaAs heterostructures

C. Reynolds, M. Geva, 1992 .

Comparison of the Stability of Functionalized GaN and GaP.

C. Reynolds, T. Paskova, A. Ivanisevic, 2015, Chemphyschem : a European journal of chemical physics and physical chemistry.

Incorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy

C. Reynolds, R. White, S. Ojha, 2016 .

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

C. Reynolds, Jia Li, Yang Liu, 2018, Nanotechnology.

Structural and optical characterization of strained and strain-compensated InGaAsP/InP quantum well laser structures

C. Ferrari, G. Salviati, C. Reynolds, 1998 .

Uniformity of threshold voltage for MESFETs fabricated on VGF GaAs substrates

C. Reynolds, W. C. Gibson, J. E. Clemans, 1987 .

Unintentional zinc diffusion in inp pn-homojunctions

C. Reynolds, M. Geva, V. Swaminathan, 1995 .

Impact of interface impurities on heterostructure field-effect transistors

C. Reynolds, H. Vuong, L. Peticolas, 1992 .

Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition

N. El-Masry, C. Reynolds, K. Jagannadham, 2018, Journal of Materials Science: Materials in Electronics.

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

C. Reynolds, Yang Liu, P. Deshmukh, 2016, Nanoscale Research Letters.

Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

C. Reynolds, Jia Li, Yang Liu, 2015 .

Zn diffusion behavior in InGaAsP/InP capped mesa buried heterostructures

C. L. Reynolds, V. Swaminathan, M. Geva, 1995 .

Recombination centers resulting from reactions of hydrogen and oxygen in n-type Czochralski silicon

V. Markevich, B. Hamilton, A. Peaker, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

Microscopic simulation of the temperature dependence of static and dynamic 1.3-/spl mu/m multi-quantum-well laser performance

Leon Shterengas, C. L. Reynolds, Mark S. Hybertsen, 2003 .

Enhancement of optical gain and amplified spontaneous emission due to waveguide geometry in the conjugated polymer poly(2-methoxy-5-(2'- ethylhexyloxy)-p-phenylene vinylene)

C. Reynolds, Zach E. Lampert, J. M. Papanikolas, 2013 .

Progress in ZnO Acceptor Doping: What Is the Best Strategy?

C. Reynolds, J. G. Reynolds, 2014 .

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 2¯ 0)

R. Davis, Z. Liliental-Weber, C. Reynolds, 2008 .

Thermal effects on LPE layer thickness

C. Reynolds, M. Tamargo, R. Kunkel, 1985 .

Use of sapphire liners to eliminate edge growth in LPE (Al, Ga)As

C. Reynolds, M. Tamargo, 1981 .

Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

C. L. Reynolds, Aivars J. Lelis, Sei-Hyung Ryu, 2009 .

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

N. El-Masry, S. Bedair, J. Zavada, 2017 .

Experimental study of physical parameters of semiconductor lasers

Paul A. Morton, C. L. Reynolds, Gleb Shtengel, 1997, Photonics West.

Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy

Wilfried Vandervorst, C. L. Reynolds, Thomas Hantschel, 1999 .

Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling

C. L. Reynolds, Mark S. Hybertsen, Gregory Belenky, 1999 .