H. Wang

发表

Integration of RF MEMS switches with pHEMT MMICs on GaAs

G. Ng, H. Wang, K.-Y. Lee, 2011, 2011 Defense Science Research Conference and Expo (DSR).

Fabrication and characterization of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped structure at InGaAs/InP interface

H. Wang, Q. Meng, C. Liu, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface

H. Wang, Q. Meng, C. Liu, 2013, 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

Low specific ON-resistance and high Figure-of-merit AlGaN/GaN HEMTs on Si substrate with non-gold metal stacks

G. Ng, T. Egawa, H. Wang, 2013, 71st Device Research Conference.

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

G. Ng, K. Radhakrishnan, H. Wang, 2005, 2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks.

The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

H. Chiu, W. Hsu, H. Wang, 2020, Coatings.

RF performance and microwave noise of metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature

K. Radhakrishnan, H. Wang, H. Yang, 2005, International Conference on Indium Phosphide and Related Materials, 2005.

Characterizations of a GaInNAs double-barrier quantum-well infrared photo-detector with the near-infrared photo-detection

H. Wang, W. Fan, W. Loke, 2007, International Conference on Electron Devices and Solid-State Circuits.

High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

H. Wang, S. Yoon, J. Gupta, 2007, IEEE Electron Device Letters.

Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

G. Ng, H. Wang, S. Yoon, 1999 .

Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate

H. Wang, J. Yang, H. Tserng, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

G. Ng, H. Wang, S. Yoon, 1999 .

Monolithic integrated photoreceiver implemented with GaAs/GaAlAs heterojunction bipolar phototransistor and transistors

H. Wang, D. Ankri, 1986 .

On the importance of gate shot noise in deep submicron RF NMOSFETs induced by gate oxide breakdown

H. Wang, R. Zeng, X. Li, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..