R. Hayashi

发表

42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs

T. Kamiya, K. Nomura, H. Hosono, 2008 .

Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O

Hideo Hosono, Masahiro Hirano, Kenji Nomura, 2007 .

Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

H. Hosono, K. Abe, T. Kamiya, 2007, IEEE Electron Device Letters.

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

Hideo Hosono, Masahiro Hirano, Kenji Nomura, 2009 .

DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction

Yasushi Sato, Nobuto Oka, Ryo Hayashi, 2010 .

Electronic State of Amorphous Indium Gallium Zinc Oxide Films Deposited by DC Magnetron Sputtering with Water Vapor Introduction

R. Hayashi, H. Kumomi, Nobuto Oka, 2012 .

Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor

K. Takahashi, T. Aiba, K. Abe, 2009, Journal of Display Technology.

Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVD

R. Hayashi, A. Matsuda, M. Kondo, 1999 .

Gas-phase diagnosis and high-rate growth of stable a-Si:H

R. Hayashi, A. Matsuda, M. Kondo, 1999 .

Preparation and Properties of Ge Microcrystals Embedded in SiO2 Glass Films

Yukio Osaka, Hiroyuki Nasu, Keiji Tsunetomo, 1990 .

High-rate growth of stable a-Si:H

Michio Kondo, Ryo Hayashi, A. Payne, 1999 .

Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Hideo Hosono, Masahiro Hirano, Kenji Nomura, 2010 .

Amorphous In–Ga–Zn-O thin-film transistor with coplanar homojunction structure

T. Kamiya, K. Nomura, H. Hosono, 2009 .

Integrated Circuits Based on Amorphous Indium-Gallium-Zinc-Oxide-Channel Thin-Film Transistors

T. Kamiya, K. Nomura, H. Hosono, 2006 .

X-band GaAs double-drift IMPATT devices

R. Hayashi, M. Omori, F. Rosztoczy, 1973 .