A. Burenkov

发表

Trajectory split method for Monte Carlo simulation of ion implantation

S. Selberherr, H. Ryssel, W. Bohmayr, 1995 .

Challenges and opportunities for process modeling in the nanotechnology era

P. Pichler, A. Burenkov, J. Lorenz, 2014 .

Corner effect in double and triple gate FinFETs

A. Burenkov, A. Burenkov, J. Lorenz, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Thermal properties of interconnects in power MOSFETs

C. Boianceanu, A. Burenkov, E. Baer, 2014, 20th International Workshop on Thermal Investigations of ICs and Systems.

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

A. Bauer, A. Burenkov, V. Mortet, 2013 .

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

H. Ryssel, A. Bauer, F. Cristiano, 2013 .

Simulation of silicon-dot-based single-electron memory devices

A. Burenkov, J. Lorenz, F. Klupfel, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Monte Carlo simulation of silicon amorphization during ion implantation

S. Selberherr, H. Ryssel, W. Bohmayr, 1998 .

Monte Carlo simulation of silicon amorphization during ion implantation

Siegfried Selberherr, Heiner Ryssel, Jürgen Lorenz, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells

P. Pichler, A. Burenkov, J. Lorenz, 2011 .

Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation

T. Mikolajick, M. Goldbach, S. Jakschik, 2011 .

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

P. Pichler, A. Bauer, F. Cristiano, 2013 .

Tunnel field-effect transistors with graphene channels

A. Burenkov, A. Orlikovsky, D. Svintsov, 2013 .

Numerical evaluation of the ITRS transistor scaling

A. Burenkov, J. Lorenz, Roland Nagy, 2014, Journal of Computational Electronics.

Tables of ion implantation spatial distributions

S. J. Amoretty, A. Burenkov, A. F. Burenkov, 1986 .

3D Simulation of Topography and Doping Processes at FhG

W. Henke, K. Tietzel, Jürgen Lorenz, 1995 .

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

P. Stolk, P. Pichler, N. Cowern, 1997 .

Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires

P. Pichler, A. Burenkov, I. Deretzis, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity

H. Ryssel, A. Burenkov, Y. Mu, 2000 .

BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion

C. Tavernier, Y. Qiu, A. Burenkov, 2012 .

Simulation of plasma immersion ion implantation into silicon

A. Burenkov, F. Torregrosa, J. Lorenz, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Simulation of plasma immersion ion implantation

P. Pichler, A. Burenkov, F. Torregrosa, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Numerical evaluation of the ITRS transistor scaling

A. Burenkov, J. Lorenz, R. Nagy, 2015 .

Phosphorus ion shower implantation for special power IC applications

L. Frey, A. Burenkov, R. Schork, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

A. Burenkov, J. Lorenz, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

An Application-Driven Improvement of the Drift–Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

H. Ryssel, A. Burenkov, J. Lorenz, 2008, IEEE Transactions on Electron Devices.

Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths

Alexander Burenkov, C. Kampen, Jürgen Lorenz, 2008, International Conference on Micro- and Nano-Electronics.

Future challenges in CMOS process modeling

P. Pichler, L. Frey, A. Burenkov, 2010 .

On the calculation of Hall factors for the characterization of electronic devices

P. Pichler, A. Burenkov, V. Uhnevionak, 2013, Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).

Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

P. Pichler, A. Bauer, F. Cristiano, 2015 .

Angular distributions of sputtered silicon at grazing gallium ion beam incidence

H. Ryssel, A. Burenkov, M. Sekowski, 2012 .

Optimization of 4H-SiC Photodiodes as Selective UV Sensors

A. Burenkov, T. Erlbacher, C. Matthus, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Anton J. Bauer, Peter Pichler, Alexander Burenkov, 2015, IEEE Transactions on Electron Devices.

Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs

P. Pichler, H. Ryssel, L. Frey, 2013 .

2D Angular distributions of ion sputtered germanium atoms under grazing incidence

H. Ryssel, A. Burenkov, M. Sekowski, 2010 .

Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes

P. Pichler, A. Burenkov, C. Steen, 2008 .

Self-heating effects in nano-scaled MOSFETs and thermal aware compact models

Alex Burenkov, A. Burenkov, J. Lorenz, 2011, 2011 17th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

P. Pichler, A. Bauer, F. Cristiano, 2015 .

A computationally efficient method for three-dimensional simulation of ion implantation

H. Ryssel, S. Selberherr, K. Tietzel, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations

Asen Asenov, Liping Wang, Xingsheng Wang, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Analytical Model for Phosphorus Large Angle Tilted Implantation

Siegfried Selberherr, Heiner Ryssel, Jürgen Lorenz, 1995 .

Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

P. Pichler, A. Bauer, F. Cristiano, 2014 .

A simulation study on the impact of lithographic process variations on CMOS device performance

Ina Kodrasi, Andreas Erdmann, Tim Fühner, 2008, SPIE Advanced Lithography.

Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices

H. Ryssel, A. Burenkov, J. Lorenz, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells

C. Kampen, A. Burenkov, A. Burenkov, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Tunnel FieldEffect Transistors with Graphene Channels 1

A. Burenkov, A. Orlikovsky, D. Svintsov, 2013 .

On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC Mosfets

P. Pichler, A. Bauer, A. Burenkov, 2013 .