J. Lorenz

发表

Trajectory split method for Monte Carlo simulation of ion implantation

S. Selberherr, H. Ryssel, W. Bohmayr, 1995 .

Ion implantation into non-planar targets: Monto Carlo simulations and analytical models

Heiner Ryssel, Jürgen Lorenz, H. Ryssel, 1987 .

Challenges and opportunities for process modeling in the nanotechnology era

P. Pichler, A. Burenkov, J. Lorenz, 2014 .

Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers

H. Ryssel, J. Lorenz, E. Bär, 2002 .

Monte Carlo simulation of silicon amorphization during ion implantation

S. Selberherr, H. Ryssel, W. Bohmayr, 1998 .

Monte Carlo simulation of silicon amorphization during ion implantation

Siegfried Selberherr, Heiner Ryssel, Jürgen Lorenz, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Process Simulation for the Semiconductor Industry

F. Durst, J. Lorenz, H J Ryssel, 1994 .

On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells

P. Pichler, A. Burenkov, J. Lorenz, 2011 .

Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium

P. Scheiblin, P. Pichler, L. Frey, 2011 .

Three-dimensional simulation of low-pressure chemical vapour deposition

J. Lorenz, E. Bar, 2004 .

3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios

H. Ryssel, J. Lorenz, E. Bar, 1997, European Workshop Materials for Advanced Metallization,.

The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes

J. Lorenz, E. Bär, 1997 .

3D simulation for sub-micron metallization

H. Ryssel, J. Lorenz, E. Bär, 1996 .

Numerical evaluation of the ITRS transistor scaling

A. Burenkov, J. Lorenz, Roland Nagy, 2014, Journal of Computational Electronics.

3-D simulation of LPCVD using segment-based topography discretization

Jürgen Lorenz, J. Lorenz, E. Bär, 1996 .

3D simulation of tungsten low-pressure chemical vapor deposition in contact holes

Jürgen Lorenz, J. Lorenz, E. Bär, 1995 .

3D Simulation of Topography and Doping Processes at FhG

W. Henke, K. Tietzel, Jürgen Lorenz, 1995 .

On the strain induced by arsenic into silicon

Enrico Napolitani, Jürgen Lorenz, Peter Pichler, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Genetic Algorithm for Optimization and Calibration in Process Simulation

Andreas Erdmann, Tim Fühner, Jürgen Lorenz, 2004 .

Three-dimensional process simulation

W. Henke, B. Baccus, Jürgen Lorenz, 1996 .

Models for implantation into multilayer targets

Heiner Ryssel, Jürgen Lorenz, H. Ryssel, 1986 .

Numerical evaluation of the ITRS transistor scaling

A. Burenkov, J. Lorenz, R. Nagy, 2015 .

An Application-Driven Improvement of the Drift–Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

H. Ryssel, A. Burenkov, J. Lorenz, 2008, IEEE Transactions on Electron Devices.

Future challenges in CMOS process modeling

P. Pichler, L. Frey, A. Burenkov, 2010 .

Survey of the Current Activities in the Field of Modeling the Space Debris Environment at TU Braunschweig

Carsten Wiedemann, Sven C. Müller, Marcel Becker, 2018 .

Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Andreas Erdmann, Peter Evanschitzky, Jürgen Lorenz, 2011, Photomask Technology.

Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Andreas Erdmann, Peter Evanschitzky, J. Lorenz, 2012 .

COMPOSITE -- A Complete Modeling Program of Silicon Technology

Heiner Ryssel, Jürgen Lorenz, Joachim Pelka, 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Self-heating effects in nano-scaled MOSFETs and thermal aware compact models

Alex Burenkov, A. Burenkov, J. Lorenz, 2011, 2011 17th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON

H. Pötzl, G. Stingeder, G. Hobler, 1991 .

Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias

Siegfried Selberherr, Peter Evanschitzky, Lado Filipovic, 2015 .

Three-dimensional simulation of ion implantation

Heiner Ryssel, Jürgen Lorenz, K. Tietzel, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Efficient Mmtidbiensional Sbiulation Of Ion Iwlantation Into Multilayer Structures

J. Lorenz, R. J. Wierzbicki, 1993, [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD).

On the Ion Implantation Models for Simulation of Fond Devices

H. Ryssel, J. Lorenz, S. List, 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

Analytical Model for Phosphorus Large Angle Tilted Implantation

Siegfried Selberherr, Heiner Ryssel, Jürgen Lorenz, 1995 .

Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices

H. Ryssel, A. Burenkov, J. Lorenz, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

COMPOSITE—A complete modeling program of silicon technology

J. Lorenz, J. Pelka, H. Ryssel, 1985, IEEE Transactions on Electron Devices.

On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells

C. Kampen, A. Burenkov, A. Burenkov, 2010, 2010 Proceedings of the European Solid State Device Research Conference.