Seonghyun Kim

发表

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

H. Hwang, M. Jo, D. Seong, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

H. Hwang, Joonmyoung Lee, Jubong Park, 2011 .

Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

H. Hwang, Seungjae Jung, G. Choi, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Multi-layer tunnel barrier (Ta2O5/TaOx/TiO2) engineering for bipolar RRAM selector applications

H. Hwang, G. Choi, Wootae Lee, 2013, Symposium on VLSI Technology.

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

H. Hwang, Seungjae Jung, M. Son, 2011, IEEE Electron Device Letters.

High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays.

H. Hwang, G. Choi, Jubong Park, 2012, ACS nano.

Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

H. Hwang, Seungjae Jung, Joonmyoung Lee, 2011, IEEE Electron Device Letters.

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen‐deficient layer

H. Hwang, M. Jo, Seungjae Jung, 2011 .

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

H. Hwang, M. Jo, Seungjae Jung, 2011 .

Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications

Byoung Hun Lee, Hyunsang Hwang, Seungjae Jung, 2012 .

Proton Irradiation Effects on Resistive Random Access Memory With ZrO$_{\rm x}$ /HfO$_{\rm x}$ Stacks

H. Hwang, M. Choe, Takhee Lee, 2011, IEEE Transactions on Nuclear Science.

Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High- $k$ pMOSFETs

Hyunsang Hwang, Rino Choi, Minseok Jo, 2009 .

Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET

H. Hwang, M. Jo, D. Seong, 2009, IEEE Electron Device Letters.

Improved Switching Variability and Stability by Activating a Single Conductive Filament

H. Hwang, Seungjae Jung, Jubong Park, 2012, IEEE Electron Device Letters.

Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory application

H. Hwang, Seungjae Jung, Seonghyun Kim, 2009 .

Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

H. Hwang, M. Jo, Seungjae Jung, 2008 .

Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications

Hyunsang Hwang, Seungjae Jung, Myungwoo Son, 2011, IEEE Electron Device Letters.

Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2010, 2010 International Electron Devices Meeting.

Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments

Hyunsang Hwang, Jubong Park, Wootae Lee, 2012 .

Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM

Hyunsang Hwang, Jubong Park, Wootae Lee, 2011, IEEE Electron Device Letters.

Resistive switching characteristics and mechanism of thermally grown WOx thin films

H. Hwang, M. Siddik, K. P. Biju, 2011 .

Improvement of Resistive Switching Uniformity by Introducing a Thin NbOx Interface Layer

H. Hwang, M. Son, G. Jung, 2012 .

The effect of excimer laser annealing on ZnO nanowires and their field effect transistors

H. Hwang, M. Choe, Takhee Lee, 2009, Nanotechnology.

Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices

H. Hwang, M. Siddik, Joonmyoung Lee, 2011 .

Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations

Byoung Hun Lee, Hyunsang Hwang, Seungjae Jung, 2011 .

Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2012, Nanotechnology.

Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2011, IEEE Electron Device Letters.

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

H. Hwang, D. Seong, Hyejung Choi, 2009 .

Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect

Seonghyun Kim, Hyunsang Hwang, Seungjae Jung, 2011, IEEE Electron Device Letters.

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

Hyunsang Hwang, Euijun Cha, Xinjun Liu, 2013, IEEE Electron Device Letters.

Characterization of Resistive Switching States in W/Pr0.7Ca0.3MnO3 for a Submicron (φ250 nm) Via-Hole Structure

H. Hwang, Seungjae Jung, M. Siddik, 2011 .

Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

H. Hwang, S. Jeon, Seonghyun Kim, 2005 .

Feasibility Study of $\hbox{Mo/SiO}_{x}/\hbox{Pt}$ Resistive Random Access Memory in an Inverter Circuit for FPGA Applications

Byunghun Lee, Seonghyun Kim, L. Pantisano, 2011, IEEE Electron Device Letters.

Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM

H. Hwang, Wootae Lee, Daeseok Lee, 2013 .

Accelerated Publication: Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2011 .

New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory

Seonghyun Kim, Hyunsang Hwang, Sangsu Park, 2011, IEEE Electron Device Letters.

Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride

Hyunsang Hwang, Minseok Jo, H. Hwang, 2009 .

Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection

H. Hwang, Tae-Wook Kim, M. Jo, 2009 .

Charge loss behavior of manos-type flash memory cell with different levels of charge injection

H. Hwang, M. Jo, Seungjae Jung, 2009, 2009 IEEE International Reliability Physics Symposium.

Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

H. Hwang, M. Jo, Seungjae Jung, 2011 .

Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

Sang Chul Lee, Hyunsang Hwang, Seungjae Jung, 2011 .

Cover Picture: Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen‐deficient layer (Phys. Status Solidi RRL 10–11/2011)

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2011 .

Novel cross-point resistive switching memory with self-formed schottky barrier

Hyunsang Hwang, Seungjae Jung, Wootae Lee, 2010, 2010 Symposium on VLSI Technology.

Resistive switching characteristics of ultra-thin TiOx

Hyunsang Hwang, Seungjae Jung, Jubong Park, 2011 .

Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications

Insung Kim, Hyunsang Hwang, Seungjae Jung, 2011 .