M. Sung

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

H. Hwang, M. Jo, D. Seong, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60nm DRAM devices

J. Roh, Yong Soo Kim, Seunghun Hong, 2012 .

Low resistive tungsten dual poly-metal gates with multi-diffusion barrier metals in high performance memory devices

Yong Soo Kim, M. Sung, Sung-ki Park, 2012 .

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Jun Young Byun, Jae Sung Roh, Taeh Wan Kim, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Jun Young Byun, Jae Sung Roh, J. Roh, 2011 .

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

M. Sung, H. Im, Y. Do, 2010 .

Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

J. Roh, Yong Soo Kim, Seunghun Hong, 2011 .

Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time

S. Koveshnikov, R. Jammy, P. D. Kirsch, 2012, 2012 International Electron Devices Meeting.

The effect of crystallinity of HfO2 on the resistive memory switching reliability

J. Roh, M. Sung, W. Kim, 2011, 2011 International Reliability Physics Symposium.

High endurance performance of 1T1R HfOx based RRAM at low (<20μA) operative current and elevated (150°C) temperature

S. Koveshnikov, Y. Nishi, G. Bersuker, 2011, 2011 IEEE International Integrated Reliability Workshop Final Report.