S. Chung

Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

H. Hwang, M. Jo, D. Seong, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Highly scalable Z-RAM with remarkably long data retention for DRAM application

Tae-Su Jang, Seung-Chan Moon, Young H. Oh, 2006, 2009 Symposium on VLSI Technology.