R. Hoffmann
发表
S. Slesazeck,
T. Mikolajick,
U. Schroeder,
2014,
IEEE Transactions on Electron Devices.
T. Mikolajick,
M. Goldbach,
J. Muller,
2013,
IEEE Transactions on Electron Devices.
S. Slesazeck,
T. Mikolajick,
J. Muller,
2012,
2012 Symposium on VLSI Technology (VLSIT).
R. Hoffmann,
J. Calvo,
S. Riedel,
2018,
IEEE Transactions on Electron Devices.
R. Hoffmann,
M. Czernohorsky,
P. Polakowski,
2019,
2019 IEEE International Electron Devices Meeting (IEDM).
Johannes Müller,
J. van Houdt,
R. Hoffmann,
2021,
Electronic Materials.
R. Hoffmann,
J. Calvo,
S. Riedel,
2018,
Applied Physics Letters.
R. Hoffmann,
T. Mikolajick,
L. Frey,
2012,
IEEE Electron Device Letters.
S. Slesazeck,
T. Mikolajick,
U. Schroeder,
2014,
2014 IEEE International Reliability Physics Symposium.
R. Hoffmann,
L. Eng,
M. Czernohorsky,
2019,
IEEE Transactions on Electron Devices.
W. Weinreich,
R. Hoffmann,
S. Eßlinger,
2020,
Advanced Electronic Materials.
R. Hoffmann,
L. Eng,
M. Czernohorsky,
2020,
IEEE Transactions on Electron Devices.
J. Paul,
R. Hoffmann,
M. Czernohorsky,
2010,
IEEE Transactions on Electron Devices.
R. Hoffmann,
S. Beyer,
K. Seidel,
2022,
2022 International Conference on IC Design and Technology (ICICDT).
R. Hoffmann,
K. Seidel,
T. Ali,
2021,
IEEE Transactions on Electron Devices.
R. Hoffmann,
H. Mähne,
K. Seidel,
2022,
IEEE Electron Device Letters.
J. Heitmann,
R. Hoffmann,
S. Beyer,
2022,
ACS applied electronic materials.
S. Slesazeck,
T. Mikolajick,
Johannes Müller,
2020,
IEEE Transactions on Electron Devices.
Sven Beyer,
Martin Trentzsch,
Thomas Mikolajick,
2020,
2020 IEEE International Memory Workshop (IMW).
J. van Houdt,
R. Hoffmann,
L. Eng,
2021,
Nanotechnology.
R. Hoffmann,
L. Eng,
M. Czernohorsky,
2020,
IEEE Transactions on Electron Devices.
R. Hoffmann,
H. Mähne,
K. Seidel,
2022,
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
R. Hoffmann,
M. Czernohorsky,
K. Seidel,
2022,
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention
R. Hoffmann,
M. Trentzsch,
S. Slesazeck,
2012,
2012 4th IEEE International Memory Workshop.
Johannes Müller,
R. Hoffmann,
L. Eng,
2022,
Advanced Electronic Materials.
J. Heitmann,
R. Hoffmann,
M. Czernohorsky,
2022,
2022 IEEE International Reliability Physics Symposium (IRPS).
J. V. Houdt,
R. Hoffmann,
L. Eng,
2020,
2020 IEEE International Memory Workshop (IMW).
G. Gerlach,
R. Hoffmann,
S. Beyer,
2023,
IEEE Electron Device Letters.
R. Hoffmann,
K. Seidel,
T. Kämpfe,
2023,
2023 IEEE International Memory Workshop (IMW).
G. Gerlach,
R. Hoffmann,
S. Beyer,
2023,
2023 IEEE International Memory Workshop (IMW).
A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes
Q. H. Le,
R. Hoffmann,
H. Mähne,
2023,
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM).
Johannes Müller,
J. van Houdt,
R. Hoffmann,
2021,
IEEE Transactions on Electron Devices.
J. V. Houdt,
R. Hoffmann,
L. Eng,
2020,
2020 IEEE International Electron Devices Meeting (IEDM).
J. Van Houdt,
R. Hoffmann,
M. Czernohorsky,
2019,
2019 19th Non-Volatile Memory Technology Symposium (NVMTS).
R. Hoffmann,
L. Eng,
M. Czernohorsky,
2021,
IEEE Silicon Nanoelectronics Workshop.
Johannes Müller,
G. Gerlach,
R. Hoffmann,
2021,
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).