R. van Bentum

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

S. Slesazeck, T. Mikolajick, U. Schroeder, 2014, IEEE Transactions on Electron Devices.

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.

S. Slesazeck, T. Mikolajick, U. Schroeder, 2017, ACS applied materials & interfaces.

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Sergei V. Kalinin, S. Kalinin, T. Mikolajick, 2013, 2013 IEEE International Electron Devices Meeting.

Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

S. Slesazeck, T. Mikolajick, U. Schroeder, 2014, 2014 IEEE International Reliability Physics Symposium.

Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

S. Flachowsky, H. Mulaosmanovic, S. Slesazeck, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

T. Schloesser, S. Slesazeck, U. Schroeder, 2013, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

Thomas Mikolajick, Jan Paul, Milan Pesic, 2016, IEEE Transactions on Electron Devices.

HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

R. Hoffmann, M. Trentzsch, S. Slesazeck, 2012, 2012 4th IEEE International Memory Workshop.

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

Stefan Slesazeck, Thomas Mikolajick, Uwe Schröder, 2014 .

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.

S. Slesazeck, T. Mikolajick, U. Schroeder, 2017, ACS applied materials & interfaces.