H. Zhang

发表

Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

Bin Wang, Haiyan Kang, Huiyong Hu, 2017, Microelectron. Reliab..

Analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor

Bin Wang, Huiyong Hu, H. Zhang, 2013 .

On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects

Weiqi Wang, H. Zhang, Guanyu Wang, 2014 .

Study of drain induced barrier lowering (DIBL) effect and subthreshold characteristics of fully-depleted Ge NMOS with P-substrate

Bin Wang, Huiyong Hu, H. Zhang, 2016 .

Study of novel fully-depleted Ge-on-Insulator n-channel MOSFET with field plate structure for improvement in GIDL and on/off characteristics

Bin Wang, Huiyong Hu, H. Zhang, 2017 .

UWB Low-Voltage High-Linearity CMOS Mixer in Zero-IF Receiver

Huiyong Hu, H. Zhang, Bin Shu, 2011 .

Collector depletion region investigation of SOI SiGe HBTs

H. Zhang, Xiaobo Xu, Jing Ning, 2011, 2011 International Conference on Electric Information and Control Engineering.

The collision frequency model of the solid state plasma for Si/Si 1−x Ge x /Si SPiN device

Huiyong Hu, Haiyan Kang, H. Zhang, 2017 .

The Impact of Drain-Induced Barrier Lowering Effect on Threshold Voltage for Small-Scaled Strained Si/SiGe nMOSFET

Huiyong Hu, H. Zhang, Guanyu Wang, 2011 .

Investigation of a Silicon-Based High Integration Reconfigurable Dipole

Huiyong Hu, H. Zhang, Han Su, 2018 .

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of ${\mathrm{Ge}}_{1-{\boldsymbol{x}}}{\mathrm{Sn}}_{{\boldsymbol{x}}}$ films on Si (100) and Si (111)

Huiyong Hu, H. Zhang, Yuanhao Miao, 2017 .

Early effect of SiGe heterojunction bipolar transistors

Huiyong Hu, H. Zhang, Xiaobo Xu, 2012 .

Short wave infrared LEDs based on strained GeSn

Huiyong Hu, H. Zhang, Bin Shu, 2018 .

Physically-based modeling for hole scattering rate in strained Si1−xGex/(100)Si

Yuming Zhang, Huiyong Hu, H. Zhang, 2015 .

Hole mobility enhancement in uniaxial stressed Ge dependence on stress and transport direction

H. Zhang, Peng Liu, P. Liu, 2014 .

Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1−xGex

Huiyong Hu, H. Zhang, Chunyu Zhou, 2012 .

On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects

H. Zhang, Guanyu Wang, Jun Yuan, 2014, Journal of Computational Electronics.

Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering

Huiyong Hu, H. Zhang, Yuanhao Miao, 2018, Materials Science in Semiconductor Processing.

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction*

Huiyong Hu, H. Zhang, Yuanhao Miao, 2017 .

Hole mobility enhancement in uniaxial stressed Ge dependence on stress and transport direction

Peng Liu, H. Zhang, Jian-Li Ma, 2014, Science China Physics, Mechanics & Astronomy.

Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si

Huiyong Hu, H. Zhang, Chao Yang, 2013 .

Valence band structure of strained Si/(111)Si1−xGex

Huiyong Hu, H. Zhang, Jianjun Song, 2010 .

Calculation of band structure in (101)-biaxially strained Si

Huiyong Hu, Huiyong Hu, H. Zhang, 2009 .

Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base

Xiao Bo Xu, Huiyong Hu, H. Zhang, 2011 .

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application

Linpeng Dong, Huiyong Hu, H. Zhang, 2019, Materials.

International Workshop on Automobile , Power and Energy Engineering Study of Drain Induced Barrier Lowering ( DIBL ) Effect for Strained Si nMOSFET

Xiao Bo Xu, H. Zhang, Jiangtao Qu, 2011 .

Transport properties of an (8, 0) carbon/silicon carbide nanotube heterojunction

Hongxia Liu, H. Zhang, J. Song, 2009, 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

INVESTIGATION OF SURFACE PIN DIODES FOR A NOVEL RECONFIGURABLE ANTENNA

Yu Wang, Huiyong Hu, Haiyan Kang, 2019, Progress In Electromagnetics Research Letters.

Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs

Huiyong Hu, H. Zhang, Yu-chen Li, 2015 .

Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Bin Wang, Huiyong Hu, H. Zhang, 2018 .

Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

Bin Wang, Huiyong Hu, H. Zhang, 2017 .

A two-dimensional subthreshold current model for strained-Si MOSFET

Huiyong Hu, H. Zhang, Xiaobo Xu, 2011 .

Hole mobility of strained Si/(001)Si1−xGex

H. Zhang, Xiaoyan Wang, Guanyu Wang, 2012 .

Hole mobility of strained Si/(001)Si1−xGex

H. Zhang, Xiaoyan Wang, Guanyu Wang, 2011, Science China Physics, Mechanics and Astronomy.

Valence band structure and hole effective mass of uniaxial stressed Germanium

H. Zhang, Xiaobo Xu, Xiaoyan Wang, 2011 .

Fabrication of high compressive stress silicon nitride membrane in strained silicon technology

Huiyong Hu, H. Zhang, Bin Shu, 2009, 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).