T. Nakashima

发表

Ge content dependence of radiation damage in Si1‐xGex source/drain p‐type metal oxide semiconductor field effect transistors

E. Simoen, C. Claeys, M. B. González, 2013 .

Radiation tolerance of Si1 − yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

E. Simoen, C. Claeys, M. B. González, 2014 .

Dissociative photoionization of perfluorocyclobutane and cis-1,1,2,2,3,4-hexafluorocyclobutane

T. Nakashima, K. Tabayashi, H. Katayanagi, 2011 .

Acid Dissociation of (5,10,15,20-Tetraphenylporphyrinato)zinc(II) in Cetyltrimethylammonium Chloride Reversed Micellar Solutions

T. Nakashima, T. Fujiwara, I. Nishida, 2002 .

Interfacial solubilization of (5,10,15,20-tetraphenylporphyrinato)-zinc(II) in cetyltrimethylammonium chloride reversed micellar solutions

T. Nakashima, T. Kumamaru, T. Fujiwara, 2002 .

Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs

E. Simoen, C. Claeys, M. B. González, 2014 .

Increased Radiation Hardness of Short-Channel Electron-Irradiated Si1-xGex Source/Drain p-Type Metal Oxide Semiconductor Field-Effect Transistors at Higher Ge Content

E. Simoen, C. Claeys, M. B. González, 2013 .

Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

E. Simoen, C. Claeys, M. B. González, 2012 .

XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method

E. Simoen, C. Claeys, T. Nakashima, 2012 .

Degradation of GaN LEDs by electron irradiation

E. Simoen, C. Claeys, T. Nakashima, 2010 .

Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

E. Simoen, C. Claeys, T. Nakashima, 2012 .

Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing

E. Simoen, C. Claeys, T. Nakashima, 2012 .