I. Tsunoda

发表

Ge content dependence of radiation damage in Si1‐xGex source/drain p‐type metal oxide semiconductor field effect transistors

E. Simoen, C. Claeys, M. B. González, 2013 .

Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy

Cor Claeys, Eddy Simoen, Mireia Bargallo Gonzalez, 2010 .

Thickness-dependent stress-relaxation in thin SGOI structures and its improvement

I. Tsunoda, M. Miyao, T. Sadoh, 2006 .

2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

J. M. Rafí, M. B. González, I. Tsunoda, 2013 .

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

P. Godignon, J. M. Rafí, G. Pellegrini, 2018 .

Direct formation of strained Si on insulator by laser annealing

I. Tsunoda, T. Sameshima, M. Miyao, 2006 .

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

G. Kramberger, J. M. Rafí, G. Pellegrini, 2020, IEEE Transactions on Nuclear Science.

Radiation tolerance of Si1 − yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

E. Simoen, C. Claeys, M. B. González, 2014 .

Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

I. Tsunoda, M. Miyao, T. Sadoh, 2004 .

500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization

I. Tsunoda, M. Miyao, H. Kanno, 2002 .

A pseudo-single-crystalline germanium film for flexible electronics

T. Kanashima, I. Tsunoda, K. Kasahara, 2015 .

Enhanced solid-phase growth of β-FeSi2 by pre-amorphization

I. Tsunoda, T. Yoshitake, M. Miyao, 2003 .

Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

I. Tsunoda, M. Miyao, H. Hagino, 2006 .

Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

I. Tsunoda, K. Takakura, K. Moto, 2015 .

Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C

S. Shimizu, I. Tsunoda, K. Takakura, 2020 .

Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs

E. Simoen, C. Claeys, M. B. González, 2014 .

Increased Radiation Hardness of Short-Channel Electron-Irradiated Si1-xGex Source/Drain p-Type Metal Oxide Semiconductor Field-Effect Transistors at Higher Ge Content

E. Simoen, C. Claeys, M. B. González, 2013 .

Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

E. Simoen, C. Claeys, M. B. González, 2012 .

Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping

I. Tsunoda, M. Miyao, T. Sadoh, 2004 .

Position control of nucleation in solid-phase crystallization of a-Si/SiO2 by Ge layer insertion

I. Tsunoda, M. Miyao, T. Sadoh, 2003 .

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2

I. Tsunoda, M. Miyao, H. Kanno, 2003 .

Enhancement of bulk nucleation in a-Si1−xGex on SiO2 for low-temperature solid-phase crystallization

I. Tsunoda, M. Miyao, T. Nagata, 2003 .

Metal-induced low-temperature crystallization of amorphous SiGe on insulating films

I. Tsunoda, M. Miyao, H. Kanno, 2002 .

Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2

I. Tsunoda, M. Miyao, T. Sadoh, 2001 .

Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells

I. Tsunoda, K. Takakura, M. Sugiyama, 2012 .

Impacts of proton irradiation on optical and electrical properties of Cu(In,Ga)Se2 thin films and solar cells

I. Tsunoda, K. Takakura, M. Sugiyama, 2013 .

XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method

E. Simoen, C. Claeys, T. Nakashima, 2012 .

Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

M. Yoneoka, I. Tsunoda, K. Takakura, 2014 .

Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator

I. Tsunoda, K. Takakura, K. Moto, 2016 .

Study of deep levels in the Mg2Si grown by vertical Bridgeman method

I. Tsunoda, K. Takakura, K. Shimizu, 2022, Japanese Journal of Applied Physics.

Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

I. Tsunoda, S. Yamaguchi, M. Miyao, 2003 .

Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

E. Simoen, C. Claeys, T. Nakashima, 2012 .

A crystalline germanium flexible thin-film transistor

T. Kanashima, H. Nakashima, I. Tsunoda, 2017 .

Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity

I. Tsunoda, K. Takakura, Kazuaki Sumi, 2021 .

Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing

E. Simoen, C. Claeys, T. Nakashima, 2012 .

Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

E. Simoen, C. Claeys, M. B. González, 2011 .

Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion

I. Tsunoda, M. Miyao, T. Sadoh, 2004 .

Low-temperature solid-phase crystallization of a-Si1−xGex on SiO2 by ion-beam stimulation

I. Tsunoda, M. Miyao, T. Sadoh, 2002 .

Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion

I. Tsunoda, S. Yamaguchi, M. Miyao, 2004 .

Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

G. Kramberger, J. M. Rafí, G. Pellegrini, 2023, IEEE Transactions on Nuclear Science.

2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

J. M. Rafí, I. Tsunoda, K. Takakura, 2013 .