S. Govindaraju

发表

A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size

Mark Y. Liu, M. Bost, V. Chikarmane, 2014, 2014 IEEE International Electron Devices Meeting.

Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

A. Holmes, S. Govindaraju, M. Oye, 2005 .

Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides

A. Holmes, J. Harris, S. Bank, 2005 .

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

A. Holmes, S. Govindaraju, M. Oye, 2004 .

Kinetics of Shallow Junction Activation: Physical Mechanisms

J. Hwang, M. Giles, S. Govindaraju, 2006, 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors.

Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots

A. Holmes, S. Govindaraju, C. Shih, 2004 .

Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma

A. Holmes, S. Govindaraju, B. Streetman, 2000 .

Growth of GaInNAs by Plasma Assisted Molecular Beam Epitaxy

A. Holmes, S. Govindaraju, B. Streetman, 2000 .

Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes

A. Holmes, J. Campbell, S. Govindaraju, 2001 .

Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum wells with GaNAs barriers and GaAs spacer layers

A. Holmes, S. Govindaraju, M. Oye, 2005 .

Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems

A. Holmes, D. Deppe, O. Shchekin, 2005 .

Inert gas maintenance for molecular-beam epitaxy systems

A. Holmes, D. Deppe, O. Shchekin, 2005 .