P. Juan

发表

Effects of Delay Time and AC Factors on Negative Bias Temperature Instability of PMOSFETs

Jih-San Li, Main-gwo Chen, P. Juan, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.

Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

P. Juan, J. Wang, Tsang-Yen Hsieh, 2015 .

The effect of TiO2 buffer layer thickness on the thermochromic properties of VO2 thin-film fabricated by high density plasma source

P. Juan, Cheng-li Lin, Kuei-Chih Lin, 2020, Japanese Journal of Applied Physics.

Al / Pb ( Zr0.53Ti0.47 ) O3/Polycrystalline Silicon/Insulator ( Y2O3 ) / Si Field Effect Transistors for Nonvolatile Memory Applications

P. Juan, J. Lee, P. Chan, 2010 .

Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

P. Juan, J. Lee, W. Shih, 2009 .

The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53 Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors

P. Juan, J. Lee, J. Jiang, 2007 .

Nitrogen ratio and RTA optimization on sputtered TiN/SiO2/Si electrolyte-insulator–semiconductor structure for pH sensing characteristics

D. Pijanowska, P. Juan, Tsung-Cheng Chen, 2015 .

Exploitation of a spontaneous spatial charge separation effect in plasmonic polyhedral α-Fe2O3 nanocrystal photoelectrodes for hydrogen production

P. Juan, W. Hung, J. Shyue, 2016 .

Atomic layer deposition of vanadium oxides using vanadyl acetylacetonate as the precursor

P. Juan, W. Cho, C. Kei, 2021 .

Low thermal budget annealing for thermochromic VO2 thin films prepared by high power impulse magnetron sputtering

P. Juan, Cheng-li Lin, Kuei-Chih Lin, 2019, Thin Solid Films.

The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

J. Lin, P. Juan, Chuan-Hsi Liu, 2010 .

Interface characterization and current conduction in HfO2-gated MOS capacitors

H. W. Chen, H. Hwang, P. Juan, 2008 .

Effects of Laser Treatment for the Pb(Zr, Ti)O3/(La, Sr)MnO3 Heterostructure Prepared onto the Stainless Steel Substrate

P. Juan, C. Chou, D. Shye, 2009 .

Plasma-enhanced atomic layer deposition of molybdenum oxides using molybdenum hexacarbonyl as the precursor

P. Juan, W. Cho, C. Kei, 2022, Materials Chemistry and Physics.

Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors

K. C. Lin, Y. C. Kuo, P. C. Juan, 2017, Microelectron. Reliab..

Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering

P. Juan, J. Tsai, Po-Jen Chen, 2016 .

Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal–gate metal–insulator–semiconductor structures

P. Juan, Cheng-li Lin, J. Tsai, 2016 .

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

P. Juan, Chia-Liang Sun, Cheng-li Lin, 2013 .

Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray diffraction (XRD) and X-Ray photoelectron spectroscopy (XPS)

Chih-Wei Hsu, Chin-Pao Cheng, P. Juan, 2010, 2010 3rd International Nanoelectronics Conference (INEC).

Inhibition Effect of a Laser on Thickness Increase of p-Type Porous Silicon in Electrochemical Anodizing

P. Juan, C. Chiang, T. -. Lee, 2016 .

Enhancing the photovoltaic performance of dye-sensitized solar cells by modifying TiO2 photoanodes with exfoliated graphene sheets

P. Juan, Sam Zhang, Ting-Yu Liu, 2016 .

The stress release of morphological change on thermochromic properties of nitrogen-incorporated VO2 thin films

P. Juan, Cheng-li Lin, Ding Wang, 2023, Journal of Applied Physics.

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

P. Juan, J. Wang, Tsang-Yen Hsieh, 2015 .

Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)

P. Juan, Cheng-li Lin, T. Kang, 2015 .

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

K. C. Lin, C. H. Liu, P. C. Juan, 2015, Microelectron. Reliab..

Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

P. Juan, Wei-Yi Chang, Jen-Bin Shi, 2015 .

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

P. Juan, J. Lee, Ming-Tsong Wang, 2006 .

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

P. Juan, Hung-Wen Chen, Chuan-Hsi Liu, 2012 .

The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors

P. Juan, J. Lee, F. Chiu, 2005 .

Ionic pH and glucose sensors fabricated using hydrothermal ZnO nanostructures

Tsang-Yen Hsieh, Po-Yu Yang, P. Juan, 2015 .

Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4 Ternary Oxide as Gate Dielectric

Main-gwo Chen, P. Juan, Cheng-li Lin, 2009 .

Temperature Dependence of the Current Conduction Mechanisms in Sm2O3 Thin Films

P. Juan, J. Lee, I. Chang, 2008 .

The effect of lanthanum (La) incorporation in ultra-thin ZrO 2 high-κ gate dielectrics

P. Juan, Chuan-Hsi Liu, H. Hsu, 2012 .

The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Ingram Yin-ku Chang, Ming-Tsong Wang, P. Juan, 2008 .

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

P. Juan, J. Lee, Ming-Tsong Wang, 2006 .

Fabrication and characterization of metal-ferroelectric

Wen-Chieh Shih, P. Juan, J. Lee, 2008 .