Y. Rey-Tauriac

On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's

V. Huard, M. Denais, G. Ribes, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Reliability Investigation of NLDEMOS in 0.13um SOI CMOS Technology

Y. Rey-Tauriac, A. Bravaix, D. Lachenal, 2006, 2006 25th International Conference on Microelectronics.

High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology

Olivier Bonnaud, M. Taurin, Yannick Rey-Tauriac, 2001, Microelectron. Reliab..

Hot-Carrier Reliability of NLDEMOS in 0.13μm SOI CMOS Technology

Y. Rey-Tauriac, A. Bravaix, D. Lachenal, 2006, 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Degradation mechanism understanding of NLDEMOS SOI in RF applications

Frederic Monsieur, D. Lachenal, Alain Bravaix, 2007, Microelectron. Reliab..

HCI degradation model based on the diffusion equation including the MVHR model

Frederic Monsieur, D. Lachenal, Alain Bravaix, 2007 .

Reliability oriented process and device simulations of power VDMOS transistors in Bipolar/CMOS/DMOS technology

H. Lhermite, M. Taurin, O. Bonnaud, 2003, Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003.