C. Gaquière

发表

12 GHz $F_{\rm MAX}$ GaN/AlN/AlGaN Nanowire MISFET

C. Lieber, S. Vandenbrouck, K. Madjour, 2009, IEEE Electron Device Letters.

ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

E. Vandamme, C. Gaquiere, M. Germain, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

C. Gaquiere, D. Ducatteau, E. Kohn, 2006, 2006 International Electron Devices Meeting.

Evaluation of AlInN=GaN HEMTs on sapphire substrate in microwave, time and temperature domains

C. Gaquiere, D. Ducatteau, E. Kohn, 2007 .

Characteristics of Al/sub 2/O/sub 3//AllnN /GaN MOSHEMT

C. Gaquiere, E. Kohn, Sylvain Delage, 2007 .

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

C. Gaquière, J. Mateos, T. González, 2014 .

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

E. Dacquay, I. Sarkas, A. Balteanu, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

O. Drisse, S. Delage, J. Persio, 2007 .

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

C. Gaquière, J. Réhault, E. Pichonat, 2010 .

High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

S. Delage, C. Gaquiere, F. Semond, 2002, IEEE Electron Device Letters.

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

C. Gaquiere, N. Vellas, Sylvain Delage, 2005 .

Design and Characterization of (140–220) GHz Frequency Compensated Power Detector

D. Gloria, C. Gaquière, G. Ducournau, 2021, IEEE Transactions on Microwave Theory and Techniques.

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

C. Gaquière, J. Mateos, T. González, 2018, Semiconductor Science and Technology.

High Performance Heterostructure Low Barrier Diodes for Sub-THz Detection

S. Nadar, C. Gaquière, N. Vellas, 2017, IEEE Transactions on Terahertz Science and Technology.

Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

C. Gaquière, P. Nilsson, X. Wallart, 2015 .

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

C. Gaquière, V. Brändli, J. Mateos, 2013 .

Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

A. Rezazadeh, C. Gaquière, M. Alim, 2016 .

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

F. Filicori, G. Vannini, A. Santarelli, 2008 .

Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing

E. Dubois, D. Gloria, C. Gaquière, 2021, 2109.09452.

Low‐loss broadband (DC to 220 GHz) S‐CPW to S‐CPS transition for S‐CPS coplanar probing

C. Gaquière, P. Ferrari, S. Lépilliet, 2019, Electronics Letters.

A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm

F. Danneville, D. Gloria, T. Quemerais, 2017, 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Temperature compensated power detector towards power consumption optimization in 5G devices

D. Gloria, C. Gaquière, G. Ducournau, 2021, Microelectron. J..

InP HEMT downscaling for power applications at W band

D. Théron, C. Gaquière, F. Medjdoub, 2005, IEEE Transactions on Electron Devices.

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

C. Gaquière, H. Maaref, S. Saadaoui, 2011 .

Testing the Temperature Limits of GaN-Based HEMT Devices

Christian Dua, Nicolas Grandjean, David Maier, 2010, IEEE Transactions on Device and Materials Reliability.

Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

Hichem Maaref, C. Gaquiere, H. Mejri, 2009 .

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

C. Gaquiere, Wojciech Knap, Sylvain Delage, 2010 .

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

L. Buchaillot, Y. Cordier, D. Théron, 2011, 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems.

Field Effect Transistors for Terahertz Detection and Emission

Dominique Coquillat, Wojciech Knap, Dalius Seliuta, 2010 .

Terahertz detection by GaN/AlGaN transistors

Michael S. Shur, C. Gaquiere, F. Teppe, 2006 .

Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods

Sergey Bychikhin, Dionyz Pogany, Christophe Gaquiere, 2007 .

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

J. Teyssier, C. Gaquière, R. Lossy, 2007 .

Electron transport in passivated AlGaN/GaN/Si HEMTs

C. Gaquière, A. Soltani, H. Maaref, 2013 .

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

H. Gualous, C. Gaquière, Y. Guhel, 2012 .

Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

C. Gaquière, N. Vellas, Y. Guhel, 2010 .

Thermal influence on S22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications

A. Rezazadeh, C. Gaquière, G. Crupi, 2019, Semiconductor Science and Technology.

Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

C. Gaquière, P. Eudeline, Y. Guhel, 2019, IEEE Transactions on Electron Devices.

Self-Heating Characterization of SiGe:C HBTs by Extracting Thermal Impedances

P. Chevalier, D. Gloria, C. Gaquière, 2012, IEEE Electron Device Letters.

Design of tunable power detector towards 5G applications

D. Gloria, C. Gaquière, G. Ducournau, 2020, Microwave and Optical Technology Letters.

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Y. Cordier, C. Gaquière, N. Vellas, 2006 .

High-power GaN MESFET on sapphire substrate

Y. Crosnier, Christophe Gaquiere, B. Boudart, 2000 .

Static measurements of GaN MESFETs on [111] Si substrates

C. Gaquière, V. Hoel, Y. Guhel, 2001 .

Electrical effects of SiN/sub x/ deposition on GaN MESFETs

C. Gaquière, Y. Guhel, B. Boudart, 2001 .

Power Measurement Setup Development for On-Wafer Characterization at 185–191 GHz

D. Gloria, C. Gaquière, G. Ducournau, 2020, 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC).

Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

F. Danneville, D. Gloria, C. Gaquière, 2019, IEEE Transactions on Microwave Theory and Techniques.

Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction

F. Danneville, G. Dambrine, P. Chevalier, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

C. Gaquière, H. Maaref, S. Saadaoui, 2011 .

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

H. Maaref, C. Gaquière, O. Fathallah, 2010 .

MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

J. Massies, S. Delage, Y. Cordier, 2003 .

Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

A. Rezazadeh, C. Gaquière, M. Alim, 2016 .

Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

C. Gaquière, P. Eudeline, Y. Guhel, 2017, IEEE Transactions on Nuclear Science.

Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors

C. Gaquière, Y. Guhel, B. Boudart, 2016, IEEE Transactions on Nuclear Science.

Influence of neutron irradiation on electron traps induced by ageing test in AlInN/GaN HEMTs

C. Gaquière, P. Eudeline, Y. Guhel, 2016, 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Influence of Thermal and Fast Neutron Irradiation on dc Electrical Performances of AlGaN/GaN Transistors

H. Gualous, C. Gaquière, Y. Guhel, 2012, IEEE Transactions on Nuclear Science.

Large-area femtosecond laser milling of silicon employing trench analysis

E. Dubois, D. Gloria, C. Gaquière, 2020, ArXiv.

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Gaudenzio Meneghesso, C. Gaquiere, Sylvain Delage, 2008 .

Ballistic nanodevices for high frequency applications

C. Gaquière, X. Wallart, J. Mateos, 2008 .

Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

C. Gaquière, J. Mateos, T. González, 2014 .

The GaN yellow luminescence centre observed using optoelectronic modulation spectroscopy

C. Gaquière, F. Omnès, P. Gibart, 2002 .

Characterization of GaAs and InGaAs double-quantum well heterostructure FETs

D. Théron, C. Gaquière, E. Playez, 1993 .

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

P. Chevalier, B. Debaillie, K. Schuh, 2021, IEEE Journal of Microwaves.

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

P. Chevalier, A. Chantre, C. Gaquière, 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Small signal modeling of HEMTs AlGaN/GaN/SiC for sensor and high-temperature applications

C. Gaquière, H. Maaref, M. Gassoumi, 2016 .

Temperature measurements in RF operating conditions of AlGaN/GaN HEMTs using IR microscopy and Raman spectroscopy

C. Gaquière, J. Jacquet, O. Jardel, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

C. Gaquière, H. Maaref, S. Saadaoui, 2012 .

Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

J. Torres, P. Nouvel, L. Varani, 2016, IEEE Transactions on Electron Devices.

Operation of GaN Planar Nanodiodes as THz Detectors and Mixers

J. Torres, P. Nouvel, L. Varani, 2014, IEEE Transactions on Terahertz Science and Technology.

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

C. Gaquière, H. Maaref, S. Saadaoui, 2013 .

Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

C. Gaquière, Y. Guhel, B. Boudart, 2017 .

AlGaN/GaN HEMTs on Resistive Si(111) Substrate: From Material Assessment to RF Power Performances

J. Massies, S. Delage, Y. Cordier, 2003 .

Microwave power capabilities of InAlN/GaN HEMTs

S. Delage, C. Gaquière, J. Carlin, 2010, 18-th INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS.

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

T. Otsuji, S. Delage, W. Knap, 2010, 35th International Conference on Infrared, Millimeter, and Terahertz Waves.

Performance of Unstuck - Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz

S. Joblot, Y. Cordier, C. Gaquière, 2008, 2008 European Microwave Integrated Circuit Conference.

AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

Christophe Gaquiere, Ali Soltani, Fabrice Semond, 2010, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

J. Massies, S. Joblot, Y. Cordier, 2007, IEEE Transactions on Electron Devices.

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

Y. Cordier, C. Gaquière, N. Vellas, 2003, IEEE Microwave and Wireless Components Letters.

Third Order Notch over Multi-bias and Temperature in GaN and GaAs HEMTs

A. Rezazadeh, C. Gaquière, M. Alim, 2021, 2020 15th European Microwave Integrated Circuits Conference (EuMIC).

ELECTRICAL CHARACTERIZATION OF AlGaN/GaN HEMTs ON Si SUBSTRATE

C. Gaquière, H. Maaref, M. Gassoumi, 2012 .

Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0.2Ga0.8N/GaN heterostructures

C. Gaquière, H. Maaref, S. Saadaoui, 2019, Journal of Physics and Chemistry of Solids.

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

C. Gaquière, S. Bychikhin, D. Pogany, 2006 .

High-power AlGaN/GaN HEMTs on resistive silicon substrate

J. Massies, Y. Cordier, C. Gaquière, 2002 .

Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

C. Gaquière, E. Kohn, V. Hoel, 2002 .

Achievement and perspective of GaN technology for microwave applications

S. Delage, C. Gaquière, J. Jacquet, 2010, 18-th INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS.

High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz

C. Gaquière, N. Vellas, D. Ducatteau, 2002 .

Fully Integrated Interferometry-Based Reflectometer for High-Impedance Instrumentation

G. Dambrine, D. Gloria, T. Quemerais, 2018, IEEE Transactions on Microwave Theory and Techniques.

Sub-THz zero-bias detector with high performances based on Heterostructure low barrier diode (HLBD)

S. Nadar, C. Gaquière, N. Vellas, 2016, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

POOLE-FRENKEL ASSISTED EMISSIONS FROM A BARRIER TRAP IN AlGaN/GaN/Si HEMTs

C. Gaquière, H. Maaref, H. Mejri, 2011 .

About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65‐nm CMOS

W. Knap, C. Gaquière, P. Gamand, 2019, IET Microwaves, Antennas & Propagation.

Wide band gap self-switching nanodevices for THz applications at room temperature

C. Gaquière, J. Mateos, T. González, 2011, 2011 6th European Microwave Integrated Circuit Conference.

10-MHz DC/DC converter based on GaN HEMT for RF applications

C. Gaquière, F. Gamand, V. Di Giacomo, 2011, 2011 IEEE 33rd International Telecommunications Energy Conference (INTELEC).

Modeling of access resistances and channel temperature estimation for GaN HEMT

C. Gaquière, M. Alim, Shariful Islam, 2022, Journal of Thermal Analysis and Calorimetry.

Thermal oxidation of lattice matched InAlN/GaN heterostructures

S. Delage, C. Gaquière, J. Carlin, 2010 .

160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management

S. Delage, C. Gaquière, J. Jacquet, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

T. Otsuji, A. Shchepetov, W. Knap, 2008 .

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

J. A. Delgado-Notario, Y. M. Meziani, C. Gaquière, 2018, Applied Physics Letters.

Nitride based nanotransistors as new sources and detectors of THz radiations

D. Seliuta, G. Valušis, W. Knap, 2008 .

Room temperature detection and emission of Terahertz radiation by plasma oscillations in nanometer size transistors

A. Shchepetov, W. Knap, D. Coquillat, 2007, 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics.

Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality

P. Chevalier, C. Gaquière, P. Dumas, 2022, Microelectronics Reliability.

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

T. Otsuji, W. Knap, N. Dyakonova, 2009 .

Room-temperature terahertz emission from nanometer field-effect transistors

N. Dyakonova, W. Knap, A. Cappy, 2006, 2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics.

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

C. Gaquiere, B. Grimbert, M. Gassoumi, 2012 .

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

C. Gaquière, Y. Guhel, B. Boudart, 2017 .

Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

C. Gaquière, H. Maaref, S. Saadaoui, 2015 .

450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

P. Chevalier, C. Gaquiere, Michel Buczko, 2018, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

S. Delage, C. Gaquiere, D. Ducatteau, 2006, IEEE Electron Device Letters.

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

C. Gaquiere, D. Ducatteau, J.C. De Jaeger, 2004, IEEE Electron Device Letters.

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

C. Gaquiere, E. Kohn, F. Medjdoub, 2009, IEEE Electron Device Letters.

Current instabilities in GaN-based devices

C. Gaquiere, E. Kohn, A. Vescan, 2001, IEEE Electron Device Letters.

Cl2/Ar based atomic layer etching of AlGaN layers

S. Delage, C. Gaquière, J. D. Jaeger, 2019, Journal of Vacuum Science & Technology A.

RAMAN CHARACTERIZATION OF SINX DEPOSITION ON UNDOPED GA0.47IN0.53AS MATERIAL GROWN ON INP SUBSTRATE

C. Gaquière, A. Lorriaux, B. Boudart, 1999 .

Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications

C. Gaquière, A. Lorriaux, B. Boudart, 1999 .

Searching for THz Gunn oscillations in GaN planar nanodiodes

C. Gaquiere, Marc Faucher, B. Grimbert, 2012 .

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

Jean-Marie Bluet, M. Gassoumi, Christophe Gaquière, 2009, Microelectron. J..

Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

C. Gaquière, J. Carlin, M. Gonschorek, 2010, IEEE Transactions on Electron Devices.

Small-signal characteristics of AlInN/GaN HEMTs

Christophe Gaquiere, E. Kohn, Nicolas Grandjean, 2006 .

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Y. Cordier, C. Gaquière, S. Chenot, 2017 .

Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization

C. Gaquière, M. Ettorre, K. Haddadi, 2022, IEEE Microwave Magazine.

GaN-based SSD structure for THz applications

K. Radhakrishnan, C. Gaquière, J. Mateos, 2019, 2019 IEEE Asia-Pacific Microwave Conference (APMC).

Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

K. Radhakrishnan, C. Gaquière, J. Mateos, 2019, 2019 IEEE Asia-Pacific Microwave Conference (APMC).

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

C. Gaquière, J. Mateos, T. González, 2015 .

Status of the Emerging InAlN/GaN Power HEMT Technology

Christophe Gaquiere, E. Kohn, Nicolas Grandjean, 2008 .

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

C. Gaquière, H. Maaref, B. Grimbert, 2010 .

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon‐ion implant‐isolation technology

C. Gaquière, N. Vellas, M. Germain, 2005 .

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

C. Gaquiere, O. Drisse, E. Morvan, 2010, IEEE Electron Device Letters.

InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

C. Gaquiere, B. Bonte, Y. Crosnier, 1998, IEEE Electron Device Letters.

Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

C. Gaquière, M. Alim, Shariful Islam, 2021, Microelectronic Engineering.

Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications

Christophe Gaquiere, Ali A. Rezazadeh, Mohammad Abdul Alim, 2016, IEEE Transactions on Microwave Theory and Techniques.

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

A. Rezazadeh, C. Gaquière, M. Alim, 2015 .

Diamond overgrown InAlN/GaN HEMT

Christophe Gaquiere, Michele Dipalo, E. Kohn, 2011 .

Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT

C. Gaquière, M. Alim, Mayahsa M. Ali, 2023, Micro and Nanostructures.

Thermal response and correlation between mobility and kink effect in GaN HEMTs

A. Rezazadeh, C. Gaquière, M. Alim, 2020 .

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

A. Rezazadeh, C. Gaquière, M. Alim, 2019, Microelectronic Engineering.

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

Hichem Maaref, Christophe Gaquiere, Salah Saadaoui, 2011 .

Anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for microwave application

A. Rezazadeh, C. Gaquière, M. Alim, 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications

Christophe Gaquière, Ming Dong Li, Florent Gamand, 2012, IEEE Transactions on Circuits and Systems II: Express Briefs.

AlGaN/GaN HEMT on (111) single crystalline diamond

Christophe Gaquiere, E. Kohn, Nicolas Grandjean, 2010 .

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

R. Quéré, S. Delage, J. Persio, 2004 .

LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon Carbide. Application to HEMT's devices.

S. Delage, J. Persio, C. Gaquière, 2003 .

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

C. Gaquière, G. Crupi, M. Alim, 2021 .

Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

A. Stelzer, C. Gaquière, R. Feger, 2014 .

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Sergey Bychikhin, Dionyz Pogany, C. Gaquiere, 2011 .

Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications

Christophe Gaquiere, Ali A. Rezazadeh, A. Rezazadeh, 2016 .

Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application

Ali A. Rezazadeh, Emerson P. Sinulingga, Peter B. Kyabaggu, 2014, 2014 9th European Microwave Integrated Circuit Conference.

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

C. Gaquière, H. Maaref, M. Gassoumi, 2013 .

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Christophe Gaquiere, Ludovic Desplanque, Xavier Wallart, 2013 .

A high-power W-band pseudomorphic InGaAs channel PHEMT

D. Théron, C. Gaquière, D. Ducatteau, 2005, IEEE Electron Device Letters.

Power measurement setup for large signal microwave characterization at 94 GHz

C. Gaquiere, F. Medjdoub, E. Delos, 2006, IEEE Microwave and Wireless Components Letters.

Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs

Y. Cordier, D. Théron, C. Gaquière, 1999 .

Pulsed bias/pulsed RF characterization measurement system of FET at constant intrinsic voltages

C. Gaquiere, Y. Crosnier, C. Gaquière, 1999 .

Breakdown analysis of an asymmetrical double recessed power MESFET's

C. Gaquiere, B. Bonte, Y. Crosnier, 1995 .

Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

P. Chevalier, F. Deprat, I. Berbezier, 2023, Solid-State Electronics.

12 GHz $F_{\rm MAX}$ GaN/AlN/AlGaN Nanowire MISFET

C. Lieber, S. Vandenbrouck, K. Madjour, 2009 .

Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

C. Gaquière, P. Nilsson, X. Wallart, 2015 .

Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

C. Gaquière, Y. Guhel, B. Boudart, 2022, IEEE Transactions on Electron Devices.

Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

M. Charles, C. Gaquière, F. Aussenac, 2022, IEEE Transactions on Electron Devices.

Indirect interband transition in hexagonal GaN

C. Gaquière, E. Pichonat, O. Lancry, 2011 .

Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

Sergey Bychikhin, Dionyz Pogany, Christophe Gaquiere, 2009, International Journal of Microwave and Wireless Technologies.

Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping

C. Gaquière, S. Bychikhin, D. Pogany, 2006, 2006 European Microwave Integrated Circuits Conference.

Electromechanical Transconductance Properties of a GaN MEMS Resonator With Fully Integrated HEMT Transducers

L. Buchaillot, Y. Cordier, D. Théron, 2012, Journal of Microelectromechanical Systems.

Indoor real-time passive millimeter wave imager for concealed threats detection

N. Vellas, Sylvain Jonniau, Matthieu Werquin, 2020, Defense + Commercial Sensing.

High performances of InP channel power HEMT at 94 GHz

D. Théron, C. Gaquière, F. Medjdoub, 2005 .

Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure

D. Théron, C. Gaquière, S. Piotrowicz, 1998 .

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

C. Gaquiere, Y. Douvry, N. Grandjean, 2009, IEEE Electron Device Letters.

A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm

Daniel Gloria, Thomas Quemerais, Jean-Michel Fournier, 2016, IEEE Microwave and Wireless Components Letters.

Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence

Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, 2012, Microelectron. Reliab..

Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT

Ali A. Rezazadeh, Mohammad A Alim, Mayahsa M Ali, 2020, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements

C. Gaquière, H. Maaref, M. Gassoumi, 2011 .

Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, 2011, Microelectron. Reliab..

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

L. Buchaillot, Y. Cordier, D. Théron, 2009 .

Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

C. Gaquière, J. Mateos, T. González, 2020, Microelectronics Reliability.

C. Gaquière, J. Mateos, T. González, 2020, Nanotechnology.

Hot carrier aging degradation phenomena in GaN based MESFETs

Gaudenzio Meneghesso, Enrico Zanoni, Fabiana Rampazzo, 2004, Microelectronics and reliability.

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates

Nathalie Labat, Nathalie Malbert, André Touboul, 2003, Microelectronics and reliability.

Nonlinear modeling of InP devices for W-band applications

Antonio Raffo, Giorgio Vannini, Dominique Schreurs, 2009, International Journal of Microwave and Wireless Technologies.

AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

S. Delage, W. Knap, D. Coquillat, 2015 .

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX

D. Celi, P. Chevalier, C. Gaquiere, 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.