J. Xie

发表

Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices

H. Morkoç, Y. Liu, P. Ruden, 2006 .

Three-dimensional measurement of composition changes in InAs/GaAs quantum dots

J. Xie, C. Tan, P. Vines, 2011 .

Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements

Jerry R. Meyer, H. Morkoç, I. Vurgaftman, 2006 .

Performance of Thin Piezoelectric Materials for Pyroelectric Energy Harvesting

Kam K. Leang, K. Leang, J. Xie, 2010 .

Visible Luminescence Related to Defects in ZnO

H. Morkoç, J. Xie, A. Osinsky, 2007 .

Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

J. Xie, Ming-Fu Li, B. Jie, 1999, IEEE Electron Device Letters.

Polarity dependence of charge to breakdown and interface state generation of oxynitride gate dielectrics prepared by rapid thermal processing

G. Lo, D. Kwong, J. Xie, 1990 .

InAlN‐barrier HFETs with GaN and InGaN channels

H. Morkoç, J. Xie, J. Leach, 2009 .

Investigation of current-voltage characteristics of n-GaN/i-AlxGa1-xN/n-GaN structures

Hadis Morkoç, P. Paul Ruden, Xianfeng Ni, 2007, SPIE OPTO.

Luminescence properties of defects in ZnO

H. Morkoç, J. Xie, A. Osinsky, 2007 .

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

Hadis Morkoç, Xianfeng Ni, J. Xie, 2008, SPIE OPTO.

The Role of Duty Cycle of Substrate Pulse Biasing in Filtered Cathodic Vacuum Arc Deposition of Amorphous Carbon Films

K. Komvopoulos, J. Xie, J. Xie, 2015, IEEE Transactions on Magnetics.

Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

J. Xie, A. Osinsky, B. Hertog, 2007 .

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2006 .

Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

E. Beam, J. Xie, K. Hobart, 2018, Journal of Crystal Growth.

In situ monitoring of Raman scattering and photoluminescence from silicon surfaces in HF aqueous solutions

B. Ren, Z. Tian, J. Xie, 1998 .

Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

J. Xie, S. Kim, Z. Sitar, 2013, Applied physics letters.

Intersubband Transitions in GaN/Al x Ga 1-x N Multi Quantum Wells

M. O. Manasreh, I. Ferguson, H. Morkoç, 2004 .

Energy relaxation probed by weak antilocalization measurements in GaN heterostructures

H. Morkoç, N. Biyikli, J. Xie, 2009 .

Effects of growth temperature and oxygen pressure on the properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates by pulsed laser deposition

J. Xie, T. Noh, Chunli Liu, 2007 .

Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films

H. Morkoç, N. Biyikli, J. Xie, 2006 .

High efficiency n-ZnO/p-SiC heterostructure photodiodes grown by plasma-assisted molecular-beam epitaxy

H. Morkoç, S. Doğan, J. Xie, 2005 .

Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors

Hadis Morkoç, P. Paul Ruden, Kyung-Ah Son, 2006 .

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Ekmel Ozbay, Hadis Morkoç, Ümit Özgür, 2009 .

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

H. Morkoç, J. Xie, Ü. Özgür, 2007 .

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

H. Morkoç, J. Xie, Y. Moon, 2006 .

Effect of ammonia plasma pretreatment on silicon–nitride barriers for Cu metallization systems

J. Xie, Z. Mo, L. J. Tang, 2001 .

The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs

Jung-Suk Goo, Qi Xiang, J. Xie, 2004, IEEE Transactions on Electron Devices.

In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN/GaN cracks

H. Morkoç, David J. Smith, Lin Zhou, 2006 .

Hybridization and tribomechanical properties of ultrathin amorphous carbon films synthesized by radio-frequency low-pressure plasma discharges

K. Komvopoulos, J. Xie, J. Xie, 2015 .

Effect of annealing temperature on microstructures and optical properties of Ba0.9Sr0.1TiO3 films

J. Xie, G. Hu, Tongtong Zhang, 2009 .

Influence of Zr and Ce doping on electromagnetic properties of (Gd,Y)–Ba–Cu–O superconducting tapes fabricated by metal organic chemical vapor deposition

Venkat Selvamanickam, Goran Majkic, Yuan Zhang, 2009 .

Photoluminescence of GaN epitaxial layers

J. Xie, C. Klingshirn, H. Schrey, 1982 .

Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

H. Morkoç, S. Doğan, J. Xie, 2005 .

Yellow luminescence in ZnO layers grown on sapphire

J. Xie, A. Osinsky, B. Hertog, 2008 .