Y. Moon

发表

Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices

H. Morkoç, Y. Liu, P. Ruden, 2006 .

Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements

Jerry R. Meyer, H. Morkoç, I. Vurgaftman, 2006 .

Study of SiNx and SiO2 passivation of GaN surfaces

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2007 .

Recovery of dry-etch-induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing

Y. Moon, Ji-Myon Lee, Seong-Ju Park, 2004 .

Comparison of light emission in InGaN/GaN light-emitting diodes with graded, triangular, and parabolic quantum-well structures

Y. Moon, Seoung-Hwan Park, D. Ahn, 2012 .

Optical Gain Analysis of Graded InGaN/GaN Quantum-Well Lasers

Y. Moon, Seoung-Hwan Park, D. Ahn, 2011 .

Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate

Seoung-Hwan Park, Doyeol Ahn, Yong-Tae Moon, 2011 .

GaN Resistive Gas Sensors for Hydrogen Detection

H. Morkoç, Y. Moon, J. Wolan, 2006 .

Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector

Y. Moon, G. Yeom, J. Oh, 2019, Applied Physics Express.

Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

H. Morkoç, S. Doğan, Y. Moon, 2004 .

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2006 .

Unstable luminescence in GaN and ZnO

H. Morkoç, Y. Moon, J. Nause, 2006 .

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, Y. Moon, 2005 .

Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes

J. Kwak, Y. Moon, June O. Song, 2015, Scientific Reports.

Effect of N doping on magnetic properties of (Zn, Mn)O thin films deposited by radio frequency magnetron sputtering

H. Morkoç, Y. Moon, P. Ruterana, 2006 .

A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire

H. Morkoç, Y. Moon, P. Ruterana, 2005 .

Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering

H. Morkoç, Y. Moon, K. Yu, 2005 .

Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition

Y. Moon, T. Yao, N. Park, 2008 .

Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors

H. Morkoç, W. Schaff, D. Ferry, 2005 .

Optimization of (112¯0) a-plane GaN growth by MOCVD on (11¯02) r-plane sapphire

H. Morkoç, N. Biyikli, Y. Moon, 2006 .

A study of GaN regrowth on the micro‐facetted GaN template formed by in‐situ thermal etching

H. Morkoç, S. Doğan, Y. Moon, 2005 .

Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium

Y. Moon, Seong-Ju Park, Dong-Joon Kim, 2001 .

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

H. Morkoç, J. Xie, Y. Moon, 2006 .

Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy

Y. Moon, N. Park, B. Kim, 2003 .

In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN/GaN cracks

H. Morkoç, David J. Smith, Lin Zhou, 2006 .

Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Hyun Hwi Lee, Y. Moon, D. Noh, 2002 .

Effect of growth interruption and the introduction of H2 on the growth of InGaN/GaN multiple quantum wells

Y. Moon, D. Noh, Seong-Ju Park, 2000 .

Light emission enhancement in blue InGaAlN/InGaN quantum well structures

Y. Moon, Seoung-Hwan Park, D. Ahn, 2011 .

Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes

Y. Moon, Seoung-Hwan Park, D. Ahn, 2010 .

Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots

Y. Moon, Hyun-Soo Kim, Y. Ok, 2001 .

Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode

T. Seong, Y. Moon, H. Amano, 2020 .

High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer.

T. Seong, Y. Moon, J. Oh, 2018, Optics express.

Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures.

T. Seong, Y. Moon, H. Amano, 2018, Optics express.

Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE

Hadis Morkoc, Feng Yun, Daniel Johnstone, 2005, SPIE OPTO.

Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells

Seong-Ju Park, Dong-Joon Kim, Tae Yeon Seong, 2001 .

'Pop-in' phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates

Y. Moon, R. Navamathavan, Seong-Ju Park, 2006 .

High-efficiency InGaN/GaN light-emitting diodes with electron injector

Y. Moon, Seoung-Hwan Park, D. Ahn, 2012 .

Structural and optical properties of InGaN/GaN multiple quantum wells : The effect of the number of InGaN/GaN pairs

T. Seong, Chel-Jong Choi, Y. Moon, 2000 .

Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures

Y. Moon, Seoung-Hwan Park, 2013 .

Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

In-Hwan Lee, Seong-Ju Park, Dong-Joon Kim, 2001 .

High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer

T. Seong, Y. Moon, J. Oh, 2018 .

A TEM study of ZnO layers deposited by MBE and RF magnetron sputtering

H. Morkoç, Y. Moon, P. Ruterana, 2006 .

Dislocation density reduction in GaN using porous SiN interlayers

C. K. Inoki, H. Morkoç, Y. Moon, 2005 .

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

S. S. Park, Hadis Morkoç, Ümit Özgür, 2005 .

Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

Y. Moon, Jeong Soo Lee, Sanghwa Lee, 2007 .

Effect of potential fluctuations on photoluminescence in Mg‐doped GaN

H. Morkoç, Y. Moon, M. Reshchikov, 2005 .

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.

Y. Moon, Soon-Hong Kwon, Sun-Kyung Kim, 2010, Optics express.

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2005 .

GaN resistive hydrogen gas sensors

Hadis Morkoç, S. Chevtchenko, Feng Yun, 2005 .

In situ normal incidence reflectance study on the effect of growth rate of nucleation layer on GaN by metalorganic chemical vapor deposition

Y. Moon, Kwang-soon Ahn, Seong-Ju Park, 2000 .

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Sang-Jun Cho, Hadis Morkoç, Q. Fan, 2006 .

Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package

Y. Moon, S. Oh, J. Oh, 2016, IEEE Photonics Technology Letters.

Activation of Mg acceptor in GaN:Mg with pulsed KrF (248 nm) excimer laser irradiation

Myung-Geun Han, Seong-Ju Park, Dong-Joon Kim, 2001 .

Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots

T. Seong, Y. Moon, Y. Ok, 2005 .

Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

C. K. Inoki, H. Morkoç, S. Doğan, 2005 .

Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

T. Seong, Y. Moon, H. Amano, 2020, IEEE Photonics Technology Letters.

Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers

H. Morkoç, Y. Moon, Ü. Özgür, 2005 .

High Efficiency and ESD of GaN-Based LEDs With Patterned Ion-Damaged Current Blocking Layer

J. Kwak, Y. Moon, S. Oh, 2015, IEEE Photonics Technology Letters.

A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

H. Morkoç, N. Biyikli, Y. Moon, 2006 .

Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes.

Joon Seop Kwak, Jae-Hyun Ryou, Keon Hwa Lee, 2015, Optics express.

Temperature Droop Characteristics of Internal Efficiency in $\hbox{In}_{x}\hbox{Ga}_{1-x}\hbox{N/GaN}$ Quantum Well Light-Emitting Diodes

Y. Moon, Seoung-Hwan Park, 2014, IEEE Photonics Journal.

Optical and Structural Studies of Phase Separation in InGaN Film Grown by MOCVD

T. Seong, In‐Hwan Lee, Y. Moon, 1999 .

Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties

H. Morkoç, Y. Moon, Xing fa Gu, 2007 .

Forward-current electroluminescence from GaN/ZnO double heterostructure diode

H. Morkoç, Y. Moon, V. Avrutin, 2005 .

Effects of GaN passivation with SiO 2 and SiN x studied by photoluminescence and surface potential electric force microscopy

Hadis Morkoç, M. A. Reshchikov, S. Chevtchenko, 2005 .

Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch

H. Morkoç, S. Doğan, Y. Moon, 2005 .