P. Ostoja

发表

Multiscale Self-Organization of the Organic Semiconductor α-Quinquethiophene

P. Maccagnani, F. Biscarini, M. Melucci, 2003 .

Solid-State Conformation, Molecular Packing, and Electrical and Optical Properties of Processable β-Methylated Sexithiophenes

E. Tedesco, G. Gigli, P. Maccagnani, 1999 .

Electrical characteristics of field-effect transistors formed with ordered α-sexithienyl

Roberto Zamboni, S. Guerri, M. Servidori, 1993 .

Liquid-crystalline rigid-core semiconductor oligothiophenes: influence of molecular structure on phase behaviour and thin-film properties.

P. Maccagnani, M. Melucci, M. Gazzano, 2007, Chemistry.

Oligothiophene S,S-dioxides: towards n-type semiconductor oligothiophenes?

G. Barbarella, P. Ostoja, L. Favaretto, 1998 .

Optical, electrical and structural comparative study of polycondensed thiophene based polymers

R. Zamboni, P. Ostoja, W. Porzio, 1987 .

Influence of molecular architecture on electronic and transport properties in sulfur-containing heterocyclic conducting polymers

J. Brédas, P. Ostoja, W. Porzio, 1989 .

Ion-implanted TiN films as diffusion barriers in silicon device technology

P. Ostoja, A. Armigliato, A. Garulli, 1985 .

Optical properties of a low energy gap conducting polymer: Polydithieno[3,4-b:′,4′-d]thiophene

A. Bolognesi, R. Zamboni, P. Ostoja, 1989 .

Preparation and properties of a new conducting polyheterocycle: Polydithieno [3, 4-b : 3′, 4′-d] thiophene (PDTT)

A. Bolognesi, R. Zamboni, P. Ostoja, 1989 .

Ion‐implanted, electron‐beam annealed TiN films as diffusion barriers for Al on Si shallow junctions

A. Scorzoni, P. Ostoja, A. Armigliato, 1985 .

Characterization of titanium nitride films deposited onto silicon

P. Ostoja, A. Armigliato, G. Celotti, 1982 .

Morphology and roughness of high-vacuum sublimed oligomer thin films

A. Lauria, J. Brédas, R. Zamboni, 1996 .

Lattice parameter study of silicon uniformly doped with boron and phosphorus

P. Ostoja, G. Celotti, D. Nobili, 1974 .

Aluminum-silicon ohmic contact on “shallow” n+p junctions☆

S. Solmi, G. Soncini, M. Finetti, 1980 .

FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes

P. Maccagnani, F. Biscarini, M. Melucci, 2004 .

Infra-red properties of bulk heavily doped silicon

P. Ostoja, A. Borghesi, A. Stella, 1985 .

Relationship between resistivity and phosphorus concentration in silicon

P. Ostoja, F. Mousty, L. Passari, 1974 .

Electron mobility empirically related to the phosphorus concentration in silicon

G. Baccarani, G. Baccarani, P. Ostoja, 1975 .

Optical and Electrical Properties of a New Conductive Polyheterocycle: Poly(l, 4-di(2-thienyl))benzene

R. Zamboni, P. Ostoja, G. Ruani, 1987 .

Characterization of TiOx films and their application as antireflection coatings for silicon solar cells

P. Ostoja, A. Armigliato, G. Celotti, 1981 .

Instability in electrical performance of organic semiconductor devices

R. Zamboni, P. Ostoja, C. Taliani, 1992 .

Thiophene–Benzothiadiazole Co‐Oligomers: Synthesis, Optoelectronic Properties, Electrical Characterization, and Thin‐Film Patterning

A. Zanelli, P. Maccagnani, M. Melucci, 2010 .

Isochronal Annealing of Silicon‐Phosphorus Solid Solutions

P. Ostoja, A. Armigliato, R. Angelucci, 1976 .

Molecular structure and transport properties in thiophene-based polyheterocycles

J. Brédas, R. Zamboni, P. Ostoja, 1989 .

Growth of conjugated oligomer thin films studied by atomic-force microscopy.

R. Zamboni, F. Biscarini, P. Ostoja, 1995, Physical review. B, Condensed matter.

Optical and electrical characterization of high‐dose ion implanted, laser‐annealed silicon solar cells

P. Ostoja, S. Solmi, A. Zani, 1981 .