Hyungcheol Shin

Hyungcheol Shin, Sangyeon Han, Geunsook Park, 1998, Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135).

Programming characteristics of p-channel Si nano-crystal memory

Kwangseok Han, Hyungcheol Shin, Ilgweon Kim, 2000 .

Thickness and other effects on oxide and interface damage by plasma processing

Chenming Hu, Hyungcheol Shin, K. Noguchi, 1993, 31st Annual Proceedings Reliability Physics 1993.

TOPICAL REVIEW: Thin gate oxide damage due to plasma processing

Chenming Hu, Hyungcheol Shin, C. Hu, 1996 .

PLASMA CHARGING DAMAGE DURING OVER-ETCH TIME OF ALUMINUM

C. Hu, Hyungcheol Shin, Geunsook Park, 1998 .

Impact of plasma charging damage and diode protection on scaled thin oxide

C. Hu, Hyungcheol Shin, Zhi-Jian Ma, 1993, Proceedings of IEEE International Electron Devices Meeting.

Comparison of the characteristics of tunneling oxide and tunneling ON for p-channel nano-crystal memory

Kwangseok Han, Hyungcheol Shin, Ilgweon Kim, 1999, ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).

Characteristics of P-channel Si nano-crystal memory

Kwangseok Han, Hyungcheol Shin, Ilgweon Kim, 1999, Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030).

Is quantum capacitance in graphene a potential hurdle for device scaling?

Kinam Kim, D. Seo, Hyungcheol Shin, 2014, Nano Research.

A new quantum dot formation process using wet etching of poly-Si along grain boundaries

Hyungcheol Shin, Seong-jong Yoo, Jongho Lee, 2000, Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).

The p-channel Si nano-crystal memory

Kwangseok Han, Hyungcheol Shin, Ilgweon Kim, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

A NIR-Light-Driven Twisted and Coiled Polymer Actuator with a PEDOT-Tos/Nylon-6 Composite for Durable and Remotely Controllable Artificial Muscle

Seongcheol Mun, Sungryul Yun, Hyungcheol Shin, 2022, Polymers.

Plasma etching antenna effect on oxide-silicon interface reliability

Chenming Hu, Hyungcheol Shin, C. Hu, 1993 .

Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3 for Bipolar Resistive Switching

Hyungcheol Shin, Jang-Sik Lee, Hyunsang Hwang, 2011 .

Tactile Tone System: A Wearable Device to Assist Accuracy of Vocal Pitch in Cochlear Implant Users

Changmok Oh, Sungyong Shin, Hyungcheol Shin, 2020, ASSETS.

Plasma etching charge-up damage to thin oxides

Chenming Hu, Hyungcheol Shin, Graham W. Hills, 1993 .

RF performance of pre-patterned locally-embedded-back-gate graphene device

Jaikwang Shin, Kinam Kim, Inkyeong Yoo, 2010, 2010 International Electron Devices Meeting.

Compact modeling of extremely scaled graphene FETs

Sung-Hoon Lee, Hyungcheol Shin, Jaeho Lee, 2012 .

Polarity-dependent device degradation in SONOS transistors due to gate conduction under nonvolatile memory operations

Young-June Park, Hong Shick Min, Jeong-Hyong Yi, 2006, IEEE Transactions on Device and Materials Reliability.

A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique

Hyungcheol Shin, Kwyro Lee, Hongjae Jang, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

A New Extraction Method of Small-Signal Parameters of MOSFETs for RF Modeling

Hyungcheol Shin, Minkyu Je, Kwyro Lee, 2000 .

Investigation of Frequency Dependent Sensitivity of Noise Figure on Device Parameters in 65 nm CMOS

Hyungcheol Shin, Hee-Sauk Jhon, Hakchul Jung, 2009 .

Design optimization of a 10 GHz low noise amplifier with gate drain capacitance consideration in 65 nm CMOS technology

Hyungcheol Shin, Hee-Sauk Jhon, Hakchul Jung, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Ku-band LNA Design in 0.18 ㎛ Logic CMOS Technology

In Man Kang, Hyungcheol Shin, Joonho Gil, 2005 .

Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

J. Gil, Kwyro Lee, Hyungcheol Shin, 2005, IEEE Journal of Solid-State Circuits.

A 5–GHz band I/Q clock generator using a self–calibration technique

Hyung Ki Ahn, Joonho Gil, Beomsup Kim, 2002 .

New surface treatment method for improving the interface characteristics of CdTe/Hg1−xCdxTe heterostructure

Choong Ki Kim, Hyungcheol Shin, C. Kim, 1997 .

Monitoring plasma-process induced damage in thin oxide

Chenming Hu, Hyungcheol Shin, C. Hu, 1993 .

Rf modeling of an MOS varactor and MIM capacitor in 0.18-μm CMOS technology

Minkyu Je, Jeonghu Han, Seong-Sik Song, 2002 .

Analysis of low-frequency noise in a-Si:H thin-film transistor by using a unified model

Y. Son, Hyungcheol Shin, Jaeho Lee, 2011, 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Step-by-step implementation of an amplifier circuit with a graphene field-effect transistor on a printed-circuit board

D. Seo, Hyungcheol Shin, Jaeho Lee, 2014 .

A silicon quantum wire transistor with one-dimensional subband effects

M. Je, Hyungcheol Shin, Sangyeon Han, 2000 .

28.2 A 51dB-SNR 120Hz-Scan-Rate 32×18 Segmented-VCOM LCD In-Cell Touch-Display-Driver IC with 96-Channel Compact Shunt-Sensing Self-Capacitance Analog Front-End

Kanghyup Chun, Hyungcheol Shin, Hongjae Jang, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

12.5 2D Coded-aperture-based ultra-compact capacitive touch-screen controller with 40 reconfigurable channels

Hyungcheol Shin, Kwyro Lee, Hongjae Jang, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

A 70dB SNR capacitive touch screen panel readout IC using capacitor-less trans-impedance amplifier and coded Orthogonal Frequency-Division Multiple Sensing scheme

Hyungcheol Shin, Kwyro Lee, Hongjae Jang, 2013, 2013 Symposium on VLSI Circuits.

An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions

Seong-Sik Song, Hyungcheol Shin, Hyungcheol Shin, 2003 .

Accurate four-terminal RF MOSFET model accounting for the short-channel effect in the source-to-drain capacitance

Hyungcheol Shin, Minkyu Je, M. Je, 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

Separate Extraction of Gate Resistance Components in RF MOSFETs

In Man Kang, Hyungcheol Shin, Myounggon Kang, 2007, IEEE Transactions on Electron Devices.

Device degradation model for stacked-ONO gate structure with using SONOS and MOS transistors

H. Min, J. Yi, Hyungcheol Shin, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

A miniaturized low-power wireless remote environmental monitoring system based on electrochemical analysis

Hyungcheol Shin, Kwyro Lee, Joonho Gil, 2004 .

A 2.4 GHz CMOS ultra low power low noise amplifier design with 65 nm CMOS technology

Hyungcheol Shin, Hee-Sauk Jhon, Hakchul Jung, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.